Researcher profile

François Debontridder

François Debontridder contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2015arXiv

Long range coherent magnetic bound states in superconductors

The quantum coherent coupling of completely different degrees of freedom is a challenging path towards creating new functionalities for quantum electronics. Usually the antagonistic coupling between spins of magnetic impurities and superconductivity leads to the destruction of the superconducting order. Here we show that a localized classical spin of an iron atom immersed in a superconducting condensate can give rise to new kind of long range coherent magnetic quantum state. In addition to the well-known Shiba bound state present on top of an impurity we reveal the existence of a star shaped pattern which extends as far as 12 nm from the impurity location. This large spatial dispersion turns out to be related, in a non-trivial way, to the superconducting coherence length. Inside star branches we observed short scale interference fringes with a particle-hole asymmetry. Our theoretical approach captures these features and relates them to the electronic band structure and the Fermi wave length of the superconductor. The discovery of a directional long range effect implies that distant magnetic atoms could coherently interact leading to new topological superconducting phases with fascinating properties.

preprint2013arXiv

Electric pulse induced electronic patchwork in the Mott insulator GaTa$_{4}$Se$_{8}$

Following a recent discovery of the Insulator-to-Metal Transition induced by electric field in GaTa$_{4}$Se$_{8}$, we performed a detailed Scanning Tunneling Microscopy/Spectroscopy study of both pristine (insulating) and transited (conducting) crystals of this narrow gap Mott insulator. The spectroscopic maps show that pristine samples are spatially homogeneous insulators while the transited samples reveal at nanometer scale a complex electronic pattern that consists of metallic and super-insulating patches immersed in the pristine insulating matrix. Surprisingly, both kinds of patches are accompanied by a strong local topographic inflation, thus evidencing for a strong electron-lattice coupling involved in this metal-insulator transition. Finally, using a strong electric field generated across the STM tunneling junction, we demonstrate the possibility to trig the metal-insulator transition locally even at room temperature.

preprint2009arXiv

Electric field effects, Mott insulator, Surface patterning, Scanning tunneling microscopy, Transition metal chalcogenides

We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltage biases V > 1.1V the surface suddenly inflates and comes in contact with the STM tip, resulting in nanometer size craters. The formed pattern can be indestructibly "read" by STM at lower voltage bias, thus allowing a 5 Tdots/inch2 dense writing/reading at room temperature. The discovery of the electromechanical coupling in GaTa4Se8 might give new clues in the understanding of the Electric Pulse Induced Resistive Switching recently observed in this stoechiometric Mott insulator.