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Franck Balestro

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Published work

5 published item(s)

preprint2022arXiv

Parity and singlet-triplet high fidelity readout in a silicon double quantum dot at 0.5 K

We demonstrate singlet-triplet readout and parity readout allowing to distinguish T0 and the polarized triplet states. We achieve high fidelity spin readout with an average fidelity above $99.9\%$ for a readout time of $20~μ$s and $99\%$ for $4~μ$s at a temperature of $0.5~K$. We initialize a singlet state in a single dot with a fidelity higher than $99\%$ and separate the two electrons while keeping the same spin state with $a \approx 95.6\%$ fidelity.

preprint2020arXiv

Charge detection in an array of CMOS quantum dots

The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state and readout spins through spin-to-charge conversion mechanisms. In this paper, we use two methods based on either a single-lead charge detector, or a reprogrammable single electron transistor. Thanks to these methods, we study the charge dynamics and sensitivity by performing single shot detection of the charge. Finally, we can probe the charge stability at any node of a linear array and assess the Coulomb disorder in the structure. We find an electrochemical potential fluctuation induced by charge noise comparable to that reported in other silicon quantum dots.

preprint2011arXiv

Cotunneling through a magnetic single-molecule transistor based on N\atC60

We present an experimental and theoretical study of a magnetic single-molecule transistor based on N@C60 connected to gold electrodes. Particular attention is paid to the regime of intermediate molecule-lead coupling, where cotunneling effects manifest themselves in the Coulomb-blockade regime. The experimental results for the differential conductance as a function of bias, gate voltage, and external magnetic field are in agreement with our analysis of the tunneling rates and provide evidence of magnetic signatures in single-N@C60 devices arising from an antiferromagnetic exchange interaction between the C60 spin and the nitrogen spin.

preprint2011arXiv

Universal transport signatures in two-electron molecular quantum dots: gate-tunable Hund's rule, underscreened Kondo effect and quantum phase transitions

We review here some universal aspects of the physics of two-electron molecular transistors in the absence of strong spin-orbit effects. Several recent quantum dots experiments have shown that an electrostatic backgate could be used to control the energy dispersion of magnetic levels. We discuss how the generically asymmetric coupling of the metallic contacts to two different molecular orbitals can indeed lead to a gate-tunable Hund's rule in the presence of singlet and triplet states in the quantum dot. For gate voltages such that the singlet constitutes the (non-magnetic) ground state, one generally observes a suppression of low voltage transport, which can yet be restored in the form of enhanced cotunneling features at finite bias. More interestingly, when the gate voltage is controlled to obtain the triplet configuration, spin S=1 Kondo anomalies appear at zero-bias, with non-Fermi liquid features related to the underscreening of a spin larger than 1/2. Finally, the small bare singlet-triplet splitting in our device allows to fine-tune with the gate between these two magnetic configurations, leading to an unscreening quantum phase transition. This transition occurs between the non-magnetic singlet phase, where a two-stage Kondo effect occurs, and the triplet phase, where the partially compensated (underscreened) moment is akin to a magnetically "ordered" state. These observations are put theoretically into a consistent global picture by using new Numerical Renormalization Group simulations, taylored to capture sharp finie-voltage cotunneling features within the Coulomb diamonds, together with complementary out-of-equilibrium diagrammatic calculations on the two-orbital Anderson model. This work should shed further light on the complicated puzzle still raised by multi-orbital extensions of the classic Kondo problem.

preprint2009arXiv

Observation of the underscreened Kondo effect in a molecular transistor

We present the first quantitative experimental evidence for the underscreened Kondo effect, an uncomplete compensation of a quantized magnetic moment by conduction electrons, as originally proposed by Nozieres and Blandin. The device consists of an even charge spin S = 1 molecular quantum dot, obtained by electromigration of C60 molecules into gold nanogaps and operated in a dilution fridge. The persistence of logarithmic singularities in the low temperature conductance is demonstrated by a comparison to the fully screened configuration obtained in odd charge spin S = 1/2 Coulomb diamonds. We also discover an extreme sensitivity of the underscreened Kondo resonance to magnetic field, that we confirm on the basis of numerical renormalization group calculations.