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Researcher profile

Frances Hellman

Frances Hellman contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciastro-ph.IMcond-mat.mes-hallgr-qcphysics.ins-det

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Published work

5 published item(s)

preprint2022arXiv

Compositional Trends in Surface Enhanced Diffusion in Lead Silicate Glasses

In this work, we use molecular dynamics simulations to study the enhancement of surface over bulk diffusion (surface enhanced diffusion) in (PbO)x(SiO2)1-x glasses. This work is motivated to better understand surface diffusion in glasses and its connection to fragility, and to enhance surface diffusion in silica and related glasses for greater thermodynamic stability during vapor-deposition. By adding PbO to silica, the fragility of glass increases continuously for 10% <= x <= 70% during experiments. The increase in fragility may correspond to an increase in surface enhanced diffusion, as fragility and surface diffusion are correlated. We observe that for the silicates investigated, while surface enhanced diffusion increases with fragility, the enhancement is quite small. The slower diffusing Si and O atoms have higher enhancements, which could allow for some surface stabilization effects. We demonstrate that there are only small changes in atomic arrangements, consistent with the similar diffusion rates, at the surface as compared to bulk. Finally, we examine the trend of bulk versus surface diffusion in view of previous observations in organic and metallic glasses and found that in oxides, fragility increase may not be strongly linked to enhanced surface diffusion.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Temperature effects on the structure and mechanical properties of vapor deposited a-SiO2

Amorphous silica (a-SiO2) exhibits unique thermo-mechanical behaviors that set it apart from other glasses. However, there is still limited understanding of how this mechanical behavior is related to the atomic structure and to the preparation conditions of a-SiO2. Here, we used electron beam (e-beam) physical vapor deposition (PVD) to prepare a series of a-SiO2 films grown at different substrate temperatures and then combined molecular simulations with Positronium Annihilation Lifetime Spectroscopy and nanoindentation experiments to establish relations among processing, structure, and mechanical response of the films. Specifically, we found that increase in the growth temperature leads to increase in the elastic moduli and hardness of the films. The relative porosity in the films also increases while the a-SiO2 network itself becomes denser, resulting in an overall increase in density despite increased porosity. In addition, we found that the a-SiO2 films exhibit the same anomalous temperature dependence of elastic modulus as bulk a-SiO2. However, the rate of increase in the elastic modulus with the measurement temperature was found to depend on the density of the a-SiO2 network and therefore on the growth temperature. Our findings provide new insights into the influence of the atomic network structure on the anomalous thermomechanical behavior of a-SiO2 and in turn guidance to control the mechanical properties of a-SiO2 films.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A Cryogenic Silicon Interferometer for Gravitational-wave Detection

The detection of gravitational waves from compact binary mergers by LIGO has opened the era of gravitational wave astronomy, revealing a previously hidden side of the cosmos. To maximize the reach of the existing LIGO observatory facilities, we have designed a new instrument that will have 5 times the range of Advanced LIGO, or greater than 100 times the event rate. Observations with this new instrument will make possible dramatic steps toward understanding the physics of the nearby universe, as well as observing the universe out to cosmological distances by the detection of binary black hole coalescences. This article presents the instrument design and a quantitative analysis of the anticipated noise floor.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Role of Element-Specific Damping on the Ultrafast, Helicity-Independent All-Optical Switching Dynamics in Amorphous (Gd,Tb)Co Thin Films

Ultrafast control of the magnetization in ps timescales by fs laser pulses offers an attractive avenue for applications such as fast magnetic devices for logic and memory. However, ultrafast helicity-independent all-optical switching (HI-AOS) of the magnetization has thus far only been observed in Gd-based, ferrimagnetic amorphous (\textit{a}-) rare earth-transition metal (\textit{a}-RE-TM) systems, and a comprehensive understanding of the reversal mechanism remains elusive. Here, we report HI-AOS in ferrimagnetic \textit{a}-Gd$_{22-x}$Tb$_x$Co$_{78}$ thin films, from x = 0 to x = 18, and elucidate the role of Gd in HI-AOS in \textit{a}-RE-TM alloys and multilayers. Increasing Tb content results in increasing perpendicular magnetic anisotropy and coercivity, without modifying magnetization density, and slower remagnetization rates and higher critical fluences for switching but still shows picosecond HI-AOS. Simulations of the atomistic spin dynamics based on the two-temperature model reproduce these results qualitatively and predict that the lower damping on the RE sublattice arising from the small spin-orbit coupling of Gd (with $L = 0$) is instrumental for the faster dynamics and lower critical fluences of the Gd-rich alloys. Annealing \textit{a}-Gd$_{10}$Tb$_{12}$Co$_{78}$ leads to slower dynamics which we argue is due to an increase in damping. These simulations strongly indicate that acounting for element-specific damping is crucial in understanding HI-AOS phenomena. The results suggest that engineering the element specific damping of materials can open up new classes of materials that exhibit low-energy, ultrafast HI-AOS.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-orbit torque generated by amorphous Fe$_{x}$Si$_{1-x}$

While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the low spin-orbit coupling (low atomic number, Z) and lack of bulk lattice inversion symmetry breaking. Here we report the observation of spin-orbit torque in an amorphous, non-ferromagnetic Fe$_{x}$Si$_{1-x}$ / cobalt bilayer at room temperature, using spin torque ferromagnetic resonance and harmonic Hall measurements. Both techniques provide a minimum spin torque efficiency of about 3 %, comparable to prototypical heavy metals such as Pt or Ta. According to the conventional theory of the spin Hall effect, a spin current in an amorphous material is not expected to have any substantial contribution from the electronic bandstructure. This, combined with the fact that Fe$_{x}$Si$_{1-x}$ does not contain any high-Z element, paves a new avenue for understanding the underlying physics of spin-orbit interaction and opens up a new class of material systems - silicides - that is directly compatible with complementary metal-oxide-semiconductor (CMOS) processes for integrated spintronics applications.

0 citations0 reviewsNo code linkedOpen access