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Researcher profile

Félix Therrien

Félix Therrien contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciMachine Learningphysics.comp-ph

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Published work

4 published item(s)

preprint2026arXiv

LeMat-GenBench: A Unified Evaluation Framework for Crystal Generative Models

Generative machine learning (ML) models hold great promise for accelerating materials discovery through the inverse design of inorganic crystals, enabling an unprecedented exploration of chemical space. Yet, the lack of standardized evaluation frameworks makes it challenging to evaluate, compare, and further develop these ML models meaningfully. In this work, we introduce LeMat-GenBench, a unified benchmark for generative models of crystalline materials, supported by a set of evaluation metrics designed to better inform model development and downstream applications. We release both an open-source evaluation suite and a public leaderboard on Hugging Face, and benchmark 12 recent generative models. Results reveal that an increase in stability leads to a decrease in novelty and diversity on average, with no model excelling across all dimensions. Altogether, LeMat-GenBench establishes a reproducible and extensible foundation for fair model comparison and aims to guide the development of more reliable, discovery-oriented generative models for crystalline materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Theoretical insights for Improving the Schottky-barrier Height at the Ga$_2$O$_3$/Pt Interface

In this work we study the Schottky barrier height (SBH) at the junction between $β$-Ga$_2$O$_3$ and platinum, a system of great importance for the next generation of high-power and high-temperature electronic devices. Specifically, we obtain interfacial atomic structures at different orientations using our structure matching algorithm and compute their SBH using electronic structure calculations based on hybrid density functional theory. The orientation and strain of platinum are found to have little impact on the barrier height. In contrast, we find that decomposed water (H.OH), which could be present at the interface from Ga$_2$O$_3$ substrate preparation, has a strong influence on the SBH, in particular in the ($\overline{2}$01) orientation. The SBH can range from $\sim$2 eV for the pristine interface to nearly zero for the full H.OH coverage. This result suggests that SBH of $\sim$2~eV can be achieved for the Ga$_2$O$_3$($\overline{2}$01)/Pt junction using the substrate preparation methods that can reduce the amount of adsorbed water at the interface.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Matching Crystal Structures Atom-to-Atom

Finding an optimal match between two different crystal structures underpins many important materials science problems, including describing solid-solid phase transitions, developing models for interface and grain boundary structures. In this work, we formulate the matching of crystals as an optimization problem where the goal is to find the alignment and the atom-to-atom map that minimize a given cost function such as the Euclidean distance between the atoms. We construct an algorithm that directly solves this problem for large finite portions of the crystals and retrieves the periodicity of the match subsequently. We demonstrate its capacity to describe transformation pathways between known polymorphs and to reproduce experimentally realized structures of semi-coherent interfaces. Additionally, from our findings we define a rigorous metric for measuring distances between crystal structures that can be used to properly quantify their geometric (Euclidean) closeness.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Minimization of atomic displacements as a guiding principle of the martensitic phase transformation

We present a unifying description for the martensitic transformation of steel that accounts for important experimentally observable features of the transformation namely, the Neumann bands, the interfacial (habit) plane between the transformed and untransformed phases and their orientation relationship (OR). It is obtained through a simple geometric minimization of the total distance traveled by all the atoms from the austenite (FCC or $γ$) phase to the martensite (BCC or $α$) phase, without the need for any explicit energy minimization. Our description unites previously proposed mechanisms but it does not rely on assumptions and experimental knowledge regarding the shear planes and directions, or external adjustable parameters. We show how the Kurdjumov-Sach orientation relationship between the two phases and the $\{225\}_γ$ habit plane, which have both been extensively reported in experiments, naturally emerge from the distance minimization. We also propose an explanation for the occurrence of a different orientation relationship (Pitsch) in thin films.

0 citations0 reviewsNo code linkedOpen access