Researcher profile

Farzan Shabani

Farzan Shabani contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Highly-directional, highly-efficient solution-processed light-emitting diodes of all-face-down oriented colloidal quantum wells

Semiconductor colloidal quantum wells (CQWs) make an exciting quasi-2D class of nanocrystals thanks to their unique properties including their highly anisotropic optical transition dipole moment (TDM). Thus, employing a film of CQWs with face-down orientation as an emissive layer (EML) in an electroluminescent device is expected to substantially boost photon outcoupling efficiency. Here, we show all-solution-processed colloidal quantum well light-emitting diodes (CQW-LEDs) using a single all-face-down oriented self-assembled monolayer (SAM) film of CQWs that enables a high level of in-plane (IP) TDMs of 92%. This SAM film significantly enhances the outcoupling efficiency from 22% (of standard randomly-oriented emitters) to 34% (of face-down oriented emitters) and charge injection efficiency. This SAM-CQW-LED architecture enables a record high level of external quantum efficiency of 18.1% for the solution-processed type of CQW-LEDs, putting their efficiency performance on par with the hybrid organic-inorganic evaporation-based CQW-LEDs and all other best solution-processed LEDs. In addition, this architecture provides a high maximum brightness of 19,800 cd/m2 with a long operational lifetime of 247 h at 100 cd/m2 along with saturated deep-red emission (651 nm). These findings indicate the effectiveness of oriented self-assembly of CQWs as electrically-driven emissive layers in improving outcoupling and external quantum efficiencies in the CQW-LEDs.

preprint2022arXiv

Plasmon-Enhanced Photoresponse of a Single Silver Nanowire and its Networked Devices

Photo-bolometric effect is critically important in optoelectronic structures and devices employing metallic electrodes with nanoscale features due to heating caused by the plasmonic field enhancement. One peculiar case is individual silver nanowires (Ag NWs) and their networks. Ag NW-networks exhibit excellent thermal, electrical, and mechanical properties, providing a simple yet reliable alternative to common flexible transparent electrode materials used in optoelectronic devices. To date there have been no reports on the photoresponse of Ag NWs. In this work, we show that a single Ag NW and a network of such Ag NWs possess a significant, intrinsic photoresponse thanks to the photo-bolometric effect, as directly observed and measured using scanning photocurrent microscopy. Surface plasmon polaritons (SPP) created at the contact metals or plasmons created at the nanowire-metal structures cause heating at the junctions where a plasmonic field enhancement is possible. The local heating of the Ag NWs results in negative photoconductance due to the bolometric effect. Here an open-circuit response due to the plasmon-enhanced Seebeck effect was recorded at the NW-metal contact junctions. The SPP-assisted bolometric effect is found to be further enhanced by decorating the Ag NWs with Ag nanoparticles. These observations are relevant to the use of metallic nanowires in plasmonic applications in particular and in optoelectronics in general. Our findings may pave the path for plasmonics enabled sensing without a spectroscopic detection.