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Researcher profile

Fariba Hatami

Fariba Hatami contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phphysics.opticscond-mat.mtrl-sciquant-ph

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Published work

3 published item(s)

preprint2026arXiv

A scalable gallium-phosphide-on-diamond spin-photon interface

The efficient interfacing of quantum emitters and photons is fundamental to quantum networking. Quantum defects embedded in integrated nanophotonic circuits are promising for such applications due to the deterministic light-matter interactions of high-cooperativity ($C>1$) cavity quantum electrodynamics and potential for scalable integration with active photonic processing. Silicon-vacancy (SiV) centers embedded in diamond nanophotonic cavities are a leading approach due to their excellent optical and spin coherence, however their long-term scalability is limited by the diamond itself, as its suspended geometry and weak nonlinearity necessitates coupling to a second processing chip. Here we realize the first high-cooperativity coupling of quantum defects to hybrid-integrated nanophotonics in a scalable, planar platform. We integrate more than 600 gallium phosphide (GaP) nanophotonic cavities on a diamond substrate with near-surface SiV centers. We examine a particular device with two strongly coupled SiV centers in detail, confirming above-unity cooperativity via multiple independent measurements. Application of an external magnetic field via a permanent magnet enables optical resolution of the SiV spin transitions from which we determine a spin-relaxation time $T_1>0.4$ ms at 4 K. We utilize the high cooperativity coupling to observe spin-dependent transmission switching and the quantum jumps of the SiV spin via single-shot readout. These results, coupled with GaP's strong nonlinear properties, establish GaP-on-diamond as a scalable planar platform for quantum network applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Triply-Resonant Sum Frequency Conversion with Gallium Phosphide Ring Resonators

We demonstrate quasi-phase matched, triply-resonant sum frequency conversion in 10.6-um-diameter integrated gallium phosphide ring resonators. A small-signal, waveguide-to-waveguide power conversion efficiency of 8%/mW is measured for conversion from telecom (1536 nm) and near infrared (1117 nm) to visible (647 nm) wavelengths with an absolute power conversion efficiency of 6.3% measured at saturation pump power. For the complementary difference frequency generation process, a single photon conversion efficiency of 7.2%/mW from visible to telecom is projected for resonators with optimized coupling. Efficient conversion from visible to telecom will facilitate long-distance transmission of spin-entangled photons from solid-state emitters such as the diamond NV center, allowing long-distance entanglement for quantum networks.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

The electrical conductivity tensor of $β$-Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries

The semiconducting oxide $β$-Gallium Oxide ($β$-Ga$_{2}$O$_{3}$) possesses a monoclinic unit cell whose low symmetry generally leads to anisotropic physical properties. For example, its electrical conductivity is generally described by a polar symmetrical tensor of second rank consisting of four independent components. Using van der Pauw measurements in a well-defined square geometry on differently-oriented high-quality bulk samples and the comparison to finite element simulations we precisely determine the ratio of all elements of the $β$-Ga$_{2}$O$_{3}$ 3-dimensional electrical conductivity tensor. Despite the structural anisotropy a nearly isotropic conductivity at and above room temperature was found with the principal conductivities deviating from each other by less than 6% and the off-diagonal element being $\approx3$% of the diagonal ones. Analysis of the temperature dependence of the anisotropy and mobility of differently doped samples allows us to compare the anisotropy for dominant phonon-scattering to that for dominant ionized-impurity scattering. For both scattering mechanisms, the conductivites along the $a$ and $b$-direction agree within 2%. In contrast, the conductivity along $c$-direction amounts to $0.96\times$ and up to $1.12\times$ that along the $b$-direction for phonon and ionized impurity scattering, respectively. The determined transport anisotropies are larger than the theoretically predicted effective mass anisotropy, suggesting slightly anisotropic scattering mechanisms. We demonstrate that significantly higher anisotropies can be caused by oriented extended structural defects in the form of low-angle grain boundaries for which we determined energy barriers of multiple 10 meV.

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