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Fariba Hatami

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physics.optics cond-mat.mes-hall quant-ph cond-mat.mtrl-sci physics.app-ph physics.atom-ph

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preprint2026arXiv

A scalable gallium-phosphide-on-diamond spin-photon interface

The efficient interfacing of quantum emitters and photons is fundamental to quantum networking. Quantum defects embedded in integrated nanophotonic circuits are promising for such applications due to the deterministic light-matter interactions of high-cooperativity ($C>1$) cavity quantum electrodynamics and potential for scalable integration with active photonic processing. Silicon-vacancy (SiV) centers embedded in diamond nanophotonic cavities are a leading approach due to their excellent optical and spin coherence, however their long-term scalability is limited by the diamond itself, as its suspended geometry and weak nonlinearity necessitates coupling to a second processing chip. Here we realize the first high-cooperativity coupling of quantum defects to hybrid-integrated nanophotonics in a scalable, planar platform. We integrate more than 600 gallium phosphide (GaP) nanophotonic cavities on a diamond substrate with near-surface SiV centers. We examine a particular device with two strongly coupled SiV centers in detail, confirming above-unity cooperativity via multiple independent measurements. Application of an external magnetic field via a permanent magnet enables optical resolution of the SiV spin transitions from which we determine a spin-relaxation time $T_1>0.4$ ms at 4 K. We utilize the high cooperativity coupling to observe spin-dependent transmission switching and the quantum jumps of the SiV spin via single-shot readout. These results, coupled with GaP's strong nonlinear properties, establish GaP-on-diamond as a scalable planar platform for quantum network applications.

preprint2022arXiv

Triply-Resonant Sum Frequency Conversion with Gallium Phosphide Ring Resonators

We demonstrate quasi-phase matched, triply-resonant sum frequency conversion in 10.6-um-diameter integrated gallium phosphide ring resonators. A small-signal, waveguide-to-waveguide power conversion efficiency of 8%/mW is measured for conversion from telecom (1536 nm) and near infrared (1117 nm) to visible (647 nm) wavelengths with an absolute power conversion efficiency of 6.3% measured at saturation pump power. For the complementary difference frequency generation process, a single photon conversion efficiency of 7.2%/mW from visible to telecom is projected for resonators with optimized coupling. Efficient conversion from visible to telecom will facilitate long-distance transmission of spin-entangled photons from solid-state emitters such as the diamond NV center, allowing long-distance entanglement for quantum networks.

preprint2019arXiv

The electrical conductivity tensor of $β$-Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries

The semiconducting oxide $β$-Gallium Oxide ($β$-Ga$_{2}$O$_{3}$) possesses a monoclinic unit cell whose low symmetry generally leads to anisotropic physical properties. For example, its electrical conductivity is generally described by a polar symmetrical tensor of second rank consisting of four independent components. Using van der Pauw measurements in a well-defined square geometry on differently-oriented high-quality bulk samples and the comparison to finite element simulations we precisely determine the ratio of all elements of the $β$-Ga$_{2}$O$_{3}$ 3-dimensional electrical conductivity tensor. Despite the structural anisotropy a nearly isotropic conductivity at and above room temperature was found with the principal conductivities deviating from each other by less than 6% and the off-diagonal element being $\approx3$% of the diagonal ones. Analysis of the temperature dependence of the anisotropy and mobility of differently doped samples allows us to compare the anisotropy for dominant phonon-scattering to that for dominant ionized-impurity scattering. For both scattering mechanisms, the conductivites along the $a$ and $b$-direction agree within 2%. In contrast, the conductivity along $c$-direction amounts to $0.96\times$ and up to $1.12\times$ that along the $b$-direction for phonon and ionized impurity scattering, respectively. The determined transport anisotropies are larger than the theoretically predicted effective mass anisotropy, suggesting slightly anisotropic scattering mechanisms. We demonstrate that significantly higher anisotropies can be caused by oriented extended structural defects in the form of low-angle grain boundaries for which we determined energy barriers of multiple 10 meV.

preprint2016arXiv

Efficient extraction of zero-phonon-line photons from single nitrogen-vacancy centers in an integrated GaP-on-diamond platform

Scaling beyond two-node quantum networks using nitrogen vacancy (NV) centers in diamond is limited by the low probability of collecting zero phonon line (ZPL) photons from single centers. Here, we demonstrate GaP-on-diamond disk resonators which resonantly couple ZPL photons from single NV centers to single-mode waveguides. In these devices, the probability of a single NV center emitting a ZPL photon into the guided waveguide mode after optical excitation can reach 9%, due to a combination of resonant enhancement of the ZPL emission and efficient coupling between the resonator and waveguide. We verify the single-photon nature of the emission and experimentally demonstrate both high in-waveguide photon numbers and substantial Purcell enhancement for a set of devices. These devices may enable scalable integrated quantum networks based on NV centers.

preprint2015arXiv

A Large-Scale GaP-on-Diamond Integrated Photonics Platform for NV Center-Based Quantum Information

We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place the platform in a strong position to realize measurement-based quantum information protocols utilizing the NV center in diamond.

preprint2015arXiv

Ultra-Low Threshold Monolayer Semiconductor Nanocavity Lasers

Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC). However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe2) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pumping threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of the PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

preprint2013arXiv

Control of Two-Dimensional Excitonic Light Emission via Photonic Crystal

Monolayers of transition metal dichalcogenides (TMDCs) have emerged as new optoelectronic materials in the two dimensional (2D) limit, exhibiting rich spin-valley interplays, tunable excitonic effects, and strong light-matter interactions. An essential yet undeveloped ingredient for many photonic applications is the manipulation of its light emission. Here we demonstrate the control of excitonic light emission from monolayer tungsten diselenide (WSe2) in an integrated photonic structure, achieved by transferring one monolayer onto a photonic crystal (PhC) with a cavity. In addition to the observation of greatly enhanced (~60 times) photoluminescence of WSe2 and an effectively coupled cavity-mode emission, we are able to redistribute the emitted photons both polarly and azimuthally in the far field through designing PhC structures, as revealed by momentum-resolved microscopy. A 2D optical antenna is thus constructed. Our work suggests a new way of manipulating photons in hybrid 2D photonics, important for future energy efficient optoelectronics and 2D nano-lasers.

preprint2013arXiv

Controlling the Spontaneous Emission Rate of Monolayer MoS$_2$ in a Photonic Crystal Nanocavity

We report on controlling the spontaneous emission (SE) rate of a molybdenum disulfide (MoS$_2$) monolayer coupled with a planar photonic crystal (PPC) nanocavity. Spatially resolved photoluminescence (PL) mapping shows strong variations of emission when the MoS$_2$ monolayer is on the PPC cavity, on the PPC lattice, on the air gap, and on the unpatterned gallium phosphide substrate. Polarization dependences of the cavity-coupled MoS$_2$ emission show a more than 5 times stronger extracted PL intensity than the un-coupled emission, which indicates an underlying cavity mode Purcell enhancement of MoS$_2$ SE rate exceeding a factor of 70.

preprint2012arXiv

Quasiresonant Excitation of InP/InGaP Quantum Dots Using Second Harmonic Generated in a Photonic Crystal Cavity

Indistinguishable single photons are necessary for quantum information processing applications. Resonant or quasiresonant excitation of single quantum dots provides greater single photon indistinguishability than incoherent pumping, but is also more challenging experimentally. Here, we demonstrate high signal to noise quasiresonant excitation of InP/InGaP quantum dots. The excitation is provided via second harmonic generated from a telecommunications wavelength laser resonant with the fundamental mode of a photonic crystal cavity, fabricated at twice the quantum dot transition wavelength. The second harmonic is generated using the χ(2) nonlinearity of the InGaP material matrix.

preprint2011arXiv

Second harmonic generation in GaP photonic crystal waveguides

We demonstrate enhanced second harmonic generation in a gallium phosphide photonic crystal waveguide with a measured external conversion efficiency of 5$\times10^{-7}$/W. Our results are promising for frequency conversion of on-chip integrated emitters having broad spectra or large inhomogeneous broadening, as well as for frequency conversion of ultrashort pulses.

preprint2010arXiv

Deterministic coupling of a single nitrogen vacancy center to a photonic crystal cavity

We describe and experimentally demonstrate a technique for deterministic coupling between a photonic crystal (PC) nanocavity and single emitters. The technique is based on in-situ scanning of a PC cavity over a sample and allows the positioning of the cavity over a desired emitter with nanoscale resolution. The power of the technique, which we term a Scanning Cavity Microscope (SCM), is demonstrated by coupling the PC nanocavity to a single nitrogen vacancy (NV) center in diamond, an emitter system that provides optically accessible electron and nuclear spin qubits.

preprint2009arXiv

Second harmonic generation in gallium phosphide photonic crystal nanocavities with ultralow continuous wave pump power

We demonstrate second harmonic generation in photonic crystal nanocavities fabricated in the semiconductor gallium phosphide. We observe second harmonic radiation at 750 nm with input powers of only nanowatts coupled to the cavity and conversion efficiency $P_{\rm out}/P_{\rm in, coupled}^2 = 430%/{\rm W}$. The large electronic band gap of GaP minimizes absorption loss, allowing efficient conversion. Our results are promising for integrated, low-power light sources and on-chip reduction of input power in other nonlinear processes.