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Fanyao Qu

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con quant-ph

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preprint2022arXiv

Persistent entanglement of valley exciton qubits in transition metal dichalcogenides integrated into a bimodal optical cavity

We report dissipative dynamics of two valley excitons residing in the $K$ and $K^\prime$-valleys of bare WSe$_2$ monolayer and the one being integrated into a bimodal optical cavity. In the former, only when the exciton-field detunings in the $K$ and $K^\prime$-valleys are rigorously equal (resonant detuning), partially entangled stationary states can be created. Otherwise the concurrence of exciton qubits turns to zero. Remarkably, in the latter (the WSe$_2$ monolayer in a bimodal optical cavity), the transfers of entanglement from one subsystem (exciton/light) to the other (light/exciton) take place. Hence a finite stationary concurrence of exciton qubits is always generated, independent of whether the exciton-field detuning in two valleys is resonant or non-resonant. In addition, it can even reach as high as 1 (maximally entangled state of two valley excitons). Since there no real system which has a strictly resonant detuning, an immersion of the WSe$_2$ monolayer in a bimodal optical cavity provides an opportunity to overcome the challenge facing by the bare WSe$_2$, opening a novel realm of potential qubits.

preprint2022arXiv

Symmetry-enforced nodal lines in the band structures of vacancy-engineered graphene

We elaborate that single-layer graphene with periodic vacancies can have a band structure containing nodal lines or nodal loops, opening the possibility of graphene-based electronic or spintronic devices with novel functionalities. The principle is that by removing carbon atoms such that the lattice becomes nonsymmorphic, every two sublattices in the unit cell will map to each other under glide plane operation. This mapping yields degenerate eigenvalues for the glide plane operation, which guarantees that the energy bands must stick together pairwise at a boundary of the Brillouin zone. Moving away from the Brillouin zone boundary causes the symmetry-enforced nodal lines to split, resulting in accidental nodal lines caused by the crossings of the split bands. Moreover, the density of states at the Fermi level may be dramatically enhanced if the nodal lines crosses the Fermi level. The nodal lines occur a variety of vacancy configurations even in the presence of Rashba spin-orbit coupling. Finally, our theory also explains the nodal loops surrounding the entire Brillouin zone of a chevron-type nanoporous graphene fabricated in a recent experiment.

preprint2021arXiv

Vacancy-Engineered Flat-Band Superconductivity in Holey Graphene

A bipartite lattice with chiral symmetry is known to host zero energy flat bands if the numbers of the two sublattices are different. We demonstrate that this mechanism of producing flat bands can be realized on graphene by introducing periodic vacancies. Using first-principle calculations, we elaborate that even though the pristine graphene does not exactly preserve chiral symmetry, this mechanism applied to holey graphene still produces single or multiple bands as narrow as ~0.5eV near the Fermi surface throughout the entire Brillouin zone. Moreover, this mechanism can combine with vacancy-engineered nonsymmorphic symmetry to produce band structures with coexisting flat bands and nodal lines. A weak coupling mean-field treatment suggests the stabilization of superconductivity by these vacancy-engineered narrow bands. In addition, superconductivity occurs predominantly on the majority sublattices, with an amplitude that increases with the number of narrow bands.

preprint2020arXiv

Controlling valley splitting and Polarization of dark- and bi-excitons in monolayer WS$_2$ by a tilted magnetic field

We developed a comprehensive theoretical framework focusing on many-body effects of exciton species in monolayer WS$_2$, including bright and dark excitons, and intra- and inter-valley biexcitons, to investigate valley dynamics in monolayer WS$_2$ subjected to a tilted magnetic field B. In particular, the evolution of the exciton population densities and the many-body particle scatterings are considered to calculate the valley polarization (V P ) as a function of the magnetic field. We found valley splittings for the dark exciton and biexciton energy levels that are larger than those of bright excitons, of -0.23 meV/T. For example, -0.46 meV/T for dark excitons and -0.69 meV/T for bright-dark intra-valley biexcitons. Furthermore, inter-valley bright-dark excitons have an opposite valley energy splittings of +0.23 meV/T. For the samples pumped by linearly polarized light, V P exhibits distinct magnetic field dependence for different types of many-body particle states. Among them, the V P of the intra-valley bright-dark biexcitons increases with increasing magnetic field and reaches nearly 50% at B=65 T. The brightened dark exciton, on the other hand, exhibits vanishing VP, indicating long valley relaxation time. Remarkably, the inter-valley bright-dark biexciton shows unconventional behavior with an inverted VP. The opposite VP for intra- and inter-valley bright-dark biexcitons, coupled with their large valley splitting and long valley lifetime may facilitate their coherent manipulation for quantum computing.

preprint2016arXiv

Topological nature of in-gap bound states in disordered large-gap monolayer transition metal dichalcogenides

We propose a physical model based on disordered (a hole punched inside a material) monolayer transition metal dichalcogenides (TMDs) to demonstrate a large-gap quantum valley Hall insulator. We find an emergence of bound states lying inside the bulk gap of the TMDs. They are strongly affected by spin-valley coupling, rest- and kinetic- mass terms and the hole size. In addition, in the whole range of the hole size, at least two in-gap bound states with opposite angular momentum, circulating around the edge of the hole, exist. Their topological insulator (TI) feature is analyzed by the Chern number, characterized by spacial distribution of their probabilities and confirmed by energy dispersion curves (Energy vs. angular momentum). It not only sheds light on overcoming low-temperature operating limitation of existing narrow-gap TIs, but also opens an opportunity to realize valley- and spin- qubits.

preprint2015arXiv

Exciton band structure of monolayer MoS2

We address the properties of excitons in monolayer MoS$_2$ from a theoretical point of view, showing that low-energy excitonic states occur both at the Brillouin zone center and at the Brillouin-zone corners, that binding energies at the Brillouin-zone center deviate strongly from the $(n-1/2)^{-2}$ pattern of the two-dimensional hydrogenic model, and that the valley-degenerate exciton doublet at the Brillouin-zone center splits at finite momentum into an upper mode with non-analytic linear dispersion and a lower mode with quadratic dispersion. Although monolayer MoS$_2$ is a direct-gap semiconductor when classified by its quasiparticle band structure, it may well be an indirect gap material when classified by its excitation spectra.

preprint2015arXiv

Zero-field and time-reserval-symmetry-broken topological phase transitions in graphene

We propose a quantum electronic device based on strained graphene nanoribbon. Mechanical strain, internal exchange field and spin-orbit couplings (SOCs) have been exploited as principle parameters to tune physical properties of the device. We predict a remarkable zero-field topological quantum phase transition between the time-reversal-symmetry broken quantum spin hall (QSH) and quantum anomalous hall (QAH) states, which was previously thought to take place only in the presence of finite magnetic field. We illustrate as intrinsic SOC is tuned, how two different helicity edge states located in the opposite edges of the nanoribbon exchange their locations. Our results indicates that pseudomagnetic field induced by the strain could be coupled to the spin degrees of freedom through the SOC responsible for the stability of QSH state. The controllability of this zero-field phase transition with strength and direction of the strain is also demonstrated. Our prediction offers a tempting prospect of strain, electric and magnetic manipulation of the QSH effect.

preprint2014arXiv

Controllable Spin-Charge Transport in Strained Graphene Nanoribbon Devices

We theoretically investigate the spin-charge transport in two-terminal device of graphene nanoribbons in the presence of an uniform uniaxial strain, spin-orbit coupling, exchange field and smooth staggered potential. We show that the direction of applied strain can efficiently tune strain-strength induced oscillation of band-gap of armchair graphene nanoribbon (AGNR). It is also found that electronic conductance in both AGNR and zigzag graphene nanoribbons (ZGNRs) oscillates with Rashba spin-orbit coupling akin to the Datta-Das field effect transistor. Two distinct strain response regimes of electronic conductance as function of spin-orbit couplings (SOC) magnitude are found. In the regime of small strain, conductance of ZGNR presents stronger strain dependence along the longitudinal direction of strain. Whereas for high values of strain shows larger effect for the transversal direction. Furthermore, the local density of states (LDOS) shows that depending on the smoothness of the staggered potential, the edge state of AGNR can either emerge or be suppressed. These emerging states can be determined experimentally by performing spatially scanning tunneling microscope or by scanning tunneling spectroscopy. Our findings open up new paradigms of manipulation and control of strained graphene based nanostructure for application on novel topological quantum devices.

preprint2011arXiv

Kondo screening regimes of a quantum dot with a single Mn ion

We study the Kondo and transport properties of a quantum dot with a single magnetic Mn ion connected to metallic leads. By employing a numerical renormalization group technique we show that depending on the value of ferromagnetic coupling strength between the local electronic spin and the magnetic moment of the Mn, two distinct Kondo regimes exist. In the weak coupling limit, the system can be found in a completely screened Kondo state describing a local magnetic moment decoupled from the rest of the system. In contrast, in the strong coupling regime the quantum dot spin and the local magnetic moment form a single large-spin entity partially Kondo screened. A crossover between these two regimes can be suitably tuned by varying the tunnel coupling between the quantum dot electron and the leads. The model investigated here is also suitable to study magnetic molecules adsorbed on a metallic surface. The rich phenomenology of these systems is reflected in the conductance across the system.