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Researcher profile

Fangdong Tang

Fangdong Tang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-el

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Published work

2 published item(s)

preprint2022arXiv

Thermal transport properties and some hydrodynamic-like behavior in 3D topological semimetal ZrTe5

Hydrodynamic fluidity in condensed matter physics has been experimentally demonstrated only in a limited number of compounds due to the stringent conditions that must be met. Herein, we performed thermal and electrical transport experiments in three-dimensional topological semimetal ZrTe5. By measuring the thermal properties in a wide temperature range, two representative experimental evidences of the hydrodynamics are observed in temperature window between the ballistic and diffusive regimes: a faster evolution of the thermal conductivity than in the ballistic regime and the non-monotonic temperature-dependent effective quasiparticle mean-free-path. In addition, magneto-thermal conductivity results indicate that charged quasiparticles, as well as phonons, may also play an important role in this hydrodynamic-like flow in ZrTe5.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Approaching Three-Dimensional Quantum Hall effect in Bulk HfTe5

The discovery of quantum Hall effect in two-dimensional (2D) electronic systems inspired the topological classifications of electronic systems1,2. By stacking 2D quantum Hall effects with interlayer coupling much weaker than the Landau level spacing, quasi-2D quantum Hall effects have been experimentally observed3~7, due to the similar physical origin of the 2D counterpart. Recently, in a real 3D electronic gas system where the interlayer coupling is much stronger than the Landau level spacing, 3D quantum Hall effect has been observed in ZrTe58. In this Letter, we report the electronic transport features of its sister bulk material, i.e., HfTe5, under external magnetic field. We observe a series of plateaus in Hall resistance \r{ho}xy as magnetic field increases until it reaches the quantum limit at 1~2 Tesla. At the plateau regions, the longitudinal resistance \r{ho}xx exhibits local minima. Although \r{ho}xx is still nonzero, its value becomes much smaller than \r{ho}xy at the last few plateaus. By mapping the Fermi surface via measuring the Shubonikov-de Haas oscillation, we find that the strength of Hall plateau is proportional to the Fermi wavelength, suggesting that its formation may be attributed to the gap opening from the interaction driven Fermi surface instability. By comparing the bulk band structures of ZrTe5 and HfTe5, we find that there exists an extra pocket near the Fermi level of HfTe5, which may lead to the finite but nonzero longitudinal conductance.

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