Researcher profile

F. V. Kusmartsev

F. V. Kusmartsev contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Beyond the ordinary acoustoelectric effect: superluminal phenomena in the acoustic realm and phonon-mediated Bloch gain

It has been shown that coherent phonons can be used as a potent tool for controlling and enhancing optoelectronic and transport properties of nanostructured materials. Recent studies revealed that interaction of acoustic phonons and fast-moving carriers in semiconductor heterostructures can be accompanied by electron-phonon instabilities that cause ordinary and induced Cherenkov effects. However, the development of such instabilities is still poorly understood. Our study shows that other supersonic phenomena, beyond the Cherenkov instability, are possible for non-equilibrium charge transport in the miniband semiconductor superlattices (SLs) driven by an acoustic plane wave. Using semiclassical nonperturbative methods and elements of the bifurcation theory, we find the conditions for the onset of dynamical instabilities (bifurcations) which are caused by the emission of specific SL phonons by supersonic electrons, and their back action on the electrons. Notably, the underlying radiation mechanism is connected either to normal or anomalous Doppler effects in full accordance with the Ginzburg-Frank-Tamm theory. The appearance of induced Doppler effects is also discussed in relation to the formation of electron bunches propagating through the spatially periodic structure of the SL. When the amplitude of the acoustic wave exceeds certain threshold, the dynamical instabilities developed in the system are manifested as drift velocity reversals, resonances in sound attenuation and absolute negative mobility. We demonstrate that the discovered superluminal Doppler phenomena can be utilized for tunable broadband amplification and generation of GHz-THz electromagnetic waves, which creates a ground for development of novel phononic devices.

preprint2021arXiv

Magnetic field-tuned quantum criticality in optimally electron-doped cuprate thin films

Antiferromagnetic (AF) spin fluctuations are commonly believed to play a key role in electron pairing of cuprate superconductors. In electron-doped cuprates, it is still in paradox about the interplay among different electronic states in quantum perturbations, especially between superconducting and magnetic states. Here, we report a systematic transport study on cation-optimized La2-xCexCuO4 (x = 0.10) thin films in high magnetic fields. We find an AF quantum phase transition near 60 T, where the Hall number jumps from nH =-x to nH = 1-x, resembling the change of nH at the AF boundary (xAF = 0.14) tuned by Ce doping. In the AF region a spin dependent state manifesting anomalous positive magnetoresistance is observed, which is closely related to superconductivity. Once the AF state is suppressed by magnetic field, a polarized ferromagnetic state is predicted, reminiscent of the recently reported ferromagnetic state at the quantum endpoint of the superconducting dome by Ce doping. The magnetic field that drives phase transitions in a similar but distinct manner to doping thereby provides a unique perspective to understand the quantum criticality of electron-doped cuprates.

preprint2019arXiv

Non-Volatile Superconductivity in an Insulating Copper Oxide Induced via Ionic Liquid Gating

Manipulating the superconducting states of high-T_c cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Traditional methods are mostly based on a trial-and-error method that is difficult to implement and time consuming. Here, employing ionic liquid gating, a selective control of volatile and non-volatile superconductivity is achieved in pristine insulating Pr_2CuO_{4\pmδ} film, based on two distinct mechanisms: 1) with positive electric fields, the film can be reversibly switched between non-superconducting and superconducting states, attributed to the carrier doping effect. 2) The film becomes more resistive by applying negative bias voltage up to -4 V, but strikingly, a non-volatile superconductivity is achieved once the gate voltage is removed. Such a persistent superconducting state represents a novel phenomenon in copper oxides, resulting from the doping healing of oxygen vacancies in copper-oxygen planes as unraveled by high-resolution scanning transmission electron microscope and in-situ x-ray diffraction experiments. The effective manipulation and mastering of volatile/non-volatile superconductivity in the same parent cuprate opens the door to more functionalities for superconducting electronics, as well as supplies flexible samples for investigating the nature of quantum phase transitions in high-T_c superconductors.