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F. Roth

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Published work

6 published item(s)

preprint2021arXiv

Ultrafast molecular orbital tomography of a pentacene thin film using time-resolved momentum microscopy at a free-electron laser

We use time-resolved momentum microscopy at a free-electron laser (FEL) and extend orbital tomography into the time domain to image the electronic wave functions of excited molecular orbitals. This technique provides unprecedented insight into the ultrafast interplay between structural and electronic dynamics. In this work we prove general applicability and establish the experimental conditions at FEL sources to minimize space charge effects and radiation damage. We investigate a bilayer pentacene film on Ag(110) by optical laser pump and FEL probe experiments. From the momentum microscopy signal, we obtain time-dependent momentum maps of the excited-state dynamics of both pentacene layers separately. Combining experimental observations with a theoretical study, we interpret the observed signal for the bottom layer as resulting from the charge redistribution between the molecule and the substrate induced by excitation. We identify that the dynamics of the top pentacene layer resembles excited-state molecular dynamics.

preprint2015arXiv

Non-Fermi-liquid scattering rates and anomalous band dispersion in ferropnictides

Angle-resolved photoemission spectroscopy (ARPES) is used to study the band dispersion and the quasiparticle scattering rates in two ferropnictides systems. Our ARPES results show linear-in-energy dependent scattering rates which are constant in a wide range of control parameter and which depend on the orbital character of the bands. We demonstrate that the linear energy dependence gives rise to weakly dispersing band with a strong mass enhancement when the band maximum crosses the chemical potential. In the superconducting phase the related small effective Fermi energy favors a Bardeen-Cooper-Schrieffer (BCS)\,\cite{Bardeen1957}-Bose-Einstein (BE)\,\cite{Bose1924} crossover state.

preprint2013arXiv

Electronic structure and quantum criticality in Ba(Fe$_{1-x-y}$Co$_{x}$Mn$_{y}$)$_{2}$As$_{2}$, an ARPES study

We used angle-resolved photoemission spectroscopy (ARPES) and density functional theory calculations to study the electronic structure of Ba(Fe1-x-yCoxMny)2As2 for x=0.06 and 0<=y <=0.07. From ARPES we derive that the substitution of Fe by Mn does not lead to hole doping, indicating a localization of the induced holes. An evaluation of the measured spectral function does not indicate a diverging effective mass or scattering rate near optimal doping. Thus the present ARPES results indicate a continuous evolution of the quasiparticle interaction and therefore question previous quantum critical scenarios.

preprint2013arXiv

The high-energy anomaly in ARPES spectra of the cuprates-many body or matrix element effect?

We used polarization-dependent angle-resolved photoemission spectroscopy (ARPES) to study the high-energy anomaly (HEA) in the dispersion of Nd2-xCexCuO4, (x=0.123). We have found that at particular photon energies the anomalous, waterfalllike dispersion gives way to a broad, continuous band. This suggests that the HEA is a matrix element effect: it arises due to a suppression of the intensity of the broadened quasi-particle band in a narrow momentum range. We confirm this interpretation experimentally, by showing that the HEA appears when the matrix element is suppressed deliberately by changing the light polarization. Calculations of the matrix element using atomic wave functions and simulation of the ARPES intensity with one-step model calculations provide further proof for this scenario. The possibility to detect the full quasi-particle dispersion further allows us to extract the high-energy self-energy function near the center and at the edge of the Brillouin zone.

preprint2011arXiv

High-$κ$ field-effect transistor with copper-phthalocyanine

The use of SrTiO$_3$ dielectrics as high-permittivity insulator in organic thin film field effect transistors (FET) is evaluated. Field-effect transistors with sputtered SrTiO$_3$ and copper-phthalocyanine (CuPc) as semiconducting layer were fabricated. The device preparation was performed in-situ in an ultra high vacuum chamber system. The dielectric in the transistors had a permittivity of up to 200 which led to low driving voltages of 3 V. The field effect transistors were p-type and reached mobilities of about $μ= 1.5\times 10^{-3}$ cm$^2$/Vs and an on/off ratio of $10^3$. These properties are compared to devices based on other dielectric materials.

preprint2009arXiv

New insight into the physics of iron pnictides from optical and penetration depth data

We report theoretical values for the unscreened plasma frequencies Omega_p of several Fe pnictides obtained from DFT based calculations within the LDA and compare them with experimental plasma frequencies obtained from reflectivity data. The sizable renormalization observed for all considered compounds points to the presence of many-body effects beyond the LDA. From the large empirical background dielectric constant of about 12-15, we estimate a large arsenic polarizability of about 9.5 +- 1.2 Angstroem^3 where the details depend on the polarizabilities of the remaining ions taken from the literature. This large polarizability can significantly reduce the value of the Coulomb repulsion U_d about 4 eV on iron known from iron oxides to a level of 2 eV or below. In general, this result points to rather strong polaronic effects as suggested by G.A. Sawatzky et al., in Refs. arXiv:0808.1390 and arXiv:0811.0214 (Berciu et al.). Possible consequences for the conditions of a formation of bipolarons are discussed, too. From the extrapolated muon spin rotation penetration depth data at T= 0 and the experimental Omega_p we estimate the total coupling constant lambda_tot for the el-boson interaction within the Eliashberg-theory adopting a single band approximation. For LaFeAsO_0.9F_0.1 a weak to intermediately strong coupling regime and a quasi-clean limit behaviour are found. For a pronounced multiband case we obtain a constraint for various intraband coupling constants which in principle allows for a sizable strong coupling in bands with either slow electrons or holes.