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F. Meier Aeschbacher

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Published work

3 published item(s)

preprint2021arXiv

Search for a muon EDM using the frozen-spin technique

This letter of intent proposes an experiment to search for an electric dipole moment of the muon based on the frozen-spin technique. We intend to exploit the high electric field, $E=1{\rm GV/m}$, experienced in the rest frame of the muon with a momentum of $p=125 {\rm MeV/}c$ when passing through a large magnetic field of $|\vec{B}|=3{\rm T}$. Current muon fluxes at the $μ$E1 beam line permit an improved search with a sensitivity of $σ(d_μ)\leq 6\times10^{-23}e{\rm cm}$, about three orders of magnitude more sensitivity than for the current upper limit of $|d_μ|\leq1.8\times10^{-19}e{\rm cm}$\,(C.L. 95\%). With the advent of the new high intensity muon beam, HIMB, and the cold muon source, muCool, at PSI the sensitivity of the search could be further improved by tailoring a re-acceleration scheme to match the experiments injection phase space. While a null result would set a significantly improved upper limit on an otherwise un-constrained Wilson coefficient, the discovery of a muon EDM would corroborate the existence of physics beyond the Standard Model.

preprint2016arXiv

MuPix7 - A fast monolithic HV-CMOS pixel chip for Mu3e

The MuPix7 chip is a monolithic HV-CMOS pixel chip, thinned down to 50 μm. It provides continuous self-triggered, non-shuttered readout at rates up to 30 Mhits/chip of 3x3 mm^2 active area and a pixel size of 103x80 μm^2. The hit efficiency depends on the chosen working point. Settings with a power consumption of 300 mW/cm^2 allow for a hit efficiency >99.5%. A time resolution of 14.2 ns (Gaussian sigma) is achieved. Latest results from 2016 test beam campaigns are shown.

preprint2016arXiv

Ultra-low material pixel layers for the Mu3e experiment

The upcoming Mu3e experiment will search for the charged lepton flavour violating decay of a muon at rest into three electrons. The maximal energy of the electrons is 53 MeV, hence a low material budget is a key performance requirement for the tracking detector. In this paper we summarize our approach to meet the requirement of about 0.1 % of a radiation length per pixel detector layer. This includes the choice of thinned active monolithic pixel sensors in HV-CMOS technology, ultra-thin flexible printed circuits, and helium gas cooling.