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Researcher profile

F. Lafont

F. Lafont contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallphysics.ins-det

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Published work

7 published item(s)

preprint2022arXiv

Multitube monitors: a new-generation of neutron beam monitors

With the renewal of many neutron science instruments and the commissioning of new neutron facilities, there is a rising demand for improved neutron beam monitoring systems with reduced beam perturbations and higher counting rate capability. Fission chambers are the most popular beam monitors; however, their use on some instruments may be prevented by the background generated by fast neutrons emitted during neutron captures in 235U and by neutrons scattered in the material of the fission chamber. Multitube detectors, on the other hand, offer a good alternative with minimum beam perturbations. The purpose of this paper is to report and analyse the results of the measurements performed with several Multitubes used for beam monitoring. We show that the transparency of Multitube beam monitors is 97.6 +/-0.4 %, and that their detection efficiency is uniform, with a deviation from the mean value < 0.7%. A counting rate reduction of 10% due to pile-up effects is measured at a rate of 550 kHz. In addition to neutron beam intensity monitoring, the Multitube can be configured for 1-dimensional or 2-dimensional localisation. We present the preliminary results of these additional functionalities.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Uniformity of response of Uranium fission chambers used as neutron beam monitors

Uranium fission chambers are commonly used for neutron beam monitoring in neutron research facilities. The challenges brought with the renewing or commissioning of new neutron facilities encourage to minimize the interaction between the monitor and the neutron beam. In order to characterize both their detection efficiency and transmission factor, several fission chambers, have been scanned on the CT1 monochromatic beam line of the ILL. Results show that the monitor transparency, measured at the center of the monitor, varies from 90% to 96%, and that the detection efficiency varies by as much as 50% over the active area.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Graphene surpasses GaAs/AlGaAs for the application of the quantum Hall effect in metrology

The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied by the charge carriers under magnetic field is exceptionally large. This is promising for a quantum Hall resistance standard more practical in graphene than in the GaAs/AlGaAs devices currently used in national metrology institutes. Here, we demonstrate that large QHE devices, made of high quality graphene grown by propane/hydrogen chemical vapour deposition on SiC substrates, can surpass state-of-the-art GaAs/AlGaAs devices by considerable margins in their required operational conditions. In particular, in the device presented here, the Hall resistance is accurately quantized within $1\times 10^{-9}$ over a 10-T wide range of magnetic field with a remarkable lower bound at 3.5 T, temperatures as high as 10 K, or measurement currents as high as 0.5 mA. These significantly enlarged and relaxed operational conditions, with a very convenient compromise of 5 T, 5.1 K and 50 $μ$A, set the superiority of graphene for this application and for the new generation of versatile and user-friendly quantum standards, compatible with a broader industrial use. We also measured an agreement of the quantized Hall resistance in graphene and GaAs/AlGaAs with an ultimate relative uncertainty of $8.2\times 10^{-11}$. This supports the universality of the QHE and its theoretical relation to $h$ and $e$, essential for the application in metrology, particularly in view of the forthcoming Système International d&#39;unités (SI) based on fundamental constants of physics, including the redefinition of the kilogram in terms of $h$.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device made of graphene grown by chemical vapour deposition on SiC which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron density devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A programmable quantum current standard from the Josephson and the quantum Hall effects

We propose a way to realize a programmable quantum current standard (PQCS) from the Josephson voltage standard and the quantum Hall resistance standard (QHR) exploiting the multiple connection technique provided by the quantum Hall effect (QHE) and the exactness of the cryogenic current comparator. The PQCS could lead to breakthroughs in electrical metrology like the realization of a programmable quantum current source, a quantum ampere-meter and a simplified closure of the Quantum Metrological Triangle. Moreover, very accurate universality tests of the QHE could be performed by comparing PQCS based on different QHRs.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition

We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene grown by chemical vapor deposition, which alters the accuracy of the Hall resistance quantization. The temperature and magnetic field dependence of the longitudinal conductivity exhibits unexpectedly smooth power law behaviors, which are incompatible with a description in terms of variable range hopping or thermal activation, but rather suggest the existence of extended or poorly localized states at energies between Landau levels. Such states could be caused by the high density of line defects (grain boundaries and wrinkles) that cross the Hall bars, as revealed by structural characterizations. Numerical calculations confirm that quasi-one-dimensional extended non-chiral states can form along such line defects and short-circuit the Hall bar chiral edge states.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the Si dangling bonds at the graphene/SiC(0001) interface to achieve high carrier mobility. Upon successful Si dangling bonds elimination, carrier mobility increases from 3 000 cm^2/Vs to > 11 000 cm^2/Vs at 0.3 K. Additionally, graphene electron concentration tends to decrease from a few 10^12 cm^-2 to less than 10^12 cm^-2. For a typical large (30x280 um^2) Hall bar, we report the observation of the integer quantum Hall states at 0.3 K with well developed transversal resistance plateaus at Landau level fillings factors of nu = 2, 6, 10, 14.. 42 and Shubnikov de Haas oscillation of the longitudinal resistivity observed from about 1 T. In such a device, the Hall state quantization at nu=2, at 19 T and 0.3 K, can be very robust: the dissipation in electronic transport can stay very low, with the longitudinal resistivity lower than 5 mOhm, for measurement currents as high as 250 uA. This is very promising in the view of an application in metrology.

0 citations0 reviewsNo code linkedOpen access