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F. Jomard

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2 publications

preprint2014arXiv

Interplay between antiferrodistortive, ferroelectric and superconducting instabilities in Sr_{1-x}Ca_{x}$TiO_{3-δ}

SrTiO3_{3} undergoes a cubic-to-tetragonal phase transition at 105K. This antiferrodistortive transition is believed to be in competition with incipient ferroelectricity. Substituting strontium by isovalent calcium induces a ferroelectric order. Introducing mobile electrons to the system by chemical non-isovalent doping, on the other hand, leads to the emergence of a dilute metal with a superconducting ground state. The link between superconductivity and the other two instabilities is an open question, which gathers momentum in the context of the growing popularity of the paradigm linking unconventional superconductors and quantum critical points. We present a set of specific-heat, neutron-scattering and dielectric permittivity and polarization measurements on Sr1−x_{1-x}Cax_{x}TiO3_{3} (0<x<0.0090<x<0.009) and a low-temperature electric conductivity in Sr0.9978_{0.9978}Ca0.0022_{0.0022}TiO3−δ_{3-δ}. Calcium substitution was found to enhance the transition temperature for both anti-ferrodistortive and ferroelectric transitions. Moreover, we find that Sr0.9978_{0.9978}Ca0.0022_{0.0022}TiO3−δ_{3-δ} has a superconducting ground state. The critical temperature in this rare case of a superconductor with a ferroelectric parent, is slightly lower than in SrTiO3−δ_{3-δ} of comparable carrier concentration. A three-dimensional phase diagram for Sr1−x_{1-x}Cax_{x}TiO3−δ_{3-δ} tracking the three transition temperatures as a function of x and δδ results from this study, in which ferroelectric and superconducting ground states are not immediate neighbours.

preprint2011arXiv

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to a higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.

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