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F. Iga

F. Iga appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.supr-con

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Published work

8 published item(s)

preprint2021arXiv

Field-induced valence fluctuation in YbB$_{12}$

We performed high-magnetic-field ultrasonic experiments on YbB$_{12}$ up to 59 T to investigate the valence fluctuations in Yb ions. In zero field, the longitudinal elastic constant $C_{11}$, the transverse elastic constants $C_{44}$ and $\left( C_{11} - C_{12} \right)/2$, and the bulk modulus $C_\mathrm{B}$ show a hardening with a change of curvature at around 35 K indicating a small contribution of valence fluctuations to the elastic constants. When high magnetic fields are applied at low temperatures, $C_\mathrm{B}$ exhibits a softening above a field-induced insulator-metal transition signaling field-induced valence fluctuations. Furthermore, at elevated temperatures, the field-induced softening of $C_\mathrm{B}$ takes place at even lower fields and $C_\mathrm{B}$ decreases continuously with field. Our analysis using the multipole susceptibility based on a two-band model reveals that the softening of $C_\mathrm{B}$ originates from the enhancement of multipole-strain interaction in addition to the decrease of the insulator energy gap. This analysis indicates that field-induced valence fluctuations of Yb cause the instability of the bulk modulus $C_\mathrm{B}$.

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preprint2021arXiv

Robust hybridization gap in a Kondo Insulator YbB${}_{12}$ probed by femtosecond optical spectroscopy

In heavy fermions the relaxation dynamics of photoexcited carriers has been found to be governed by the low energy indirect gap, E$_{g}$, resulting from hybridization between localized moments and conduction band electrons. Here, carrier relaxation dynamics in a prototype Kondo insulator YbB${}_{12}$ is studied over large range of temperatures and over three orders of magnitude. We utilize the intrinsic non-linearity of dynamics to quantitatively determine microscopic parameters, such as electron-hole recombination rate. The extracted value reveals that hybridization is accompanied by a strong charge transfer from localized 4f-levels. The results imply the presence of a hybridization gap up to temperatures of the order of E$_{g}$/k$_{B}\approx200$ K, which is extremely robust against electronic excitation. Finally, below 20 K the data reveal changes in the low energy electronic structure, attributed to short-range antiferromagnetic correlations between the localized levels.

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preprint2016arXiv

Spontaneous structural distortion of metallic Shastry-Sutherland system DyB4 by quadrupole-spin-lattice coupling

DyB4 has a two-dimensional Shastry-Sutherland (Sh-S) lattice with strong Ising character of the Dy ions. Despite the intrinsic frustrations, surprisingly, it undergoes two successive transitions: a magnetic ordering at TN = 20K, and a quadrupole ordering at TQ=12.5 K. From high-resolution neutron and synchrotron X-ray powder diffraction studies, we have obtained full structural information on this material in all phases, and demonstrate that structural modifications occurring at quadrupolar transition lead to the lifting of frustrations inherent in the Sh-S model. Our study thus provides a complete experimental picture of how the intrinsic frustration of the Sh-S lattice can be lifted by the coupling to quadrupole moments. We show that two other factors, i.e. strong spin-orbit coupling and long-range RKKY interaction in metallic DyB4, play an important role in this behavior.

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preprint2015arXiv

Emergent photovoltage on SmB6 surface upon bulk-gap evolution revealed by pump-and-probe photoemission spectroscopy

Recent studies suggest that an exemplary Kondo insulator SmB6 belongs to a new class of topological insulators (TIs), in which non-trivial spin-polarized metallic states emerge on surface upon the formation of Kondo hybridization gap in the bulk. Remarkably, the bulk resistivity reaches more than 20 Ohm cm at 4 K, making SmB6 a candidate for a so-called bulk-insulating TI. We here investigate optical-pulse responses of SmB6 by pump-and-probe photoemission spectroscopy. Surface photovoltage effect is observed below ~90 K. This indicates that an optically-active band bending region develops beneath the novel metallic surface upon the bulk-gap evolution. The photovoltaic effect persists for >200 microsec, which is long enough to be detected by electronics devices, and could be utilized for optical gating of the novel metallic surface.

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preprint2015arXiv

Hybridization gap formation in the Kondo insulator YbB$_{12}$ observed using time-resolved photoemission spectroscopy

A detailed low-energy electronic structure of a Kondo insulator YbB$_{12}$ was revealed by a synergetic combination of ultrahigh-resolution laser photoemission spectroscopy (PES) and time-resolved PES. The former confirmed a 25-meV pseudogap corresponding to the Kondo temperature of this material, and more importantly, it revealed that a 15-meV gap and a Kondo-peak feature developed below a crossover temperature $T^\ast \sim 110$ K. In harmony with this, the latter discovered a very long recombination time exceeding 100 ps below $\sim$$T^\ast$. This is a clear manifestation of photoexcited carriers due to the bottleneck in the recovery dynamics, which is interpreted as a developing hybridization gap of a hard gap.

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preprint2010arXiv

Different Evolution of Intrinsic Gap in Kondo Semiconductors SmB6 and YbB12

Dependence of the spectral functions on temperature and rare-earth substitution was examined in detail for Kondo semiconductor alloys Sm1-xEuxB6 and Yb1-xLuxB12 by bulk-sensitive photoemission. It is found that the 4f lattice coherence and intrinsic (small) energy gap are robust for SmB6 against the Eu substitution up to x = 0.15 while both collapse by Lu substitution already at x = 0.125 for YbB12. Our results suggest that the mechanism of the intrinsic gap formation is different between SmB6 and YbB12 although they were so far categorized in the same kind of Kondo semiconductors.

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preprint2010arXiv

Stable Existence of Phase IV inside Phase II under Pressure in Ce$_{0.8}$La$_{0.2}$B$_{6}$

We investigate the pressure effect of the electrical resistivity and magnetization of Ce$_{0.8}$La$_{0.2}$B$_{6}$. The situation in which phase IV stably exists inside phase II at H=0 T could be realized by applying a pressure above $P\sim 1.1$ GPa. This originates from the fact that the stability of phase II under pressure is larger than those of phases IV and III. The results seem to be difficult to reproduce by taking the four interactions of $Γ_{\mathrm{5u}}$-type AFO, $O_{xy}$-type AFQ, $T_{xyz}$-type AFO, and AF exchange into account within a mean-field calculation framework.

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preprint2002arXiv

Paramagnetic Meissner Effect in Superconducting Single Crystals of Ba_{1-x}K_xBiO_3

The paramagnetic Meissner effect (PME) in the field cooled susceptibility has been observed in superconducting single crystals of Ba_{1-x}K_xBiO_3 using magnetometers of Quantum-Design Co.. The PME is similar to that observed in cuprates and Nb superconductors. For the Ba_{0.63}K_{0.37}BiO_3 crystal, the PME is observed in cooling process under the field up to 750 Oe. The PME was not found in the virgin-charged superconducting magnet. The PME is found in a superconductor with trapped flux and may arise from a remnant field, a temperature inhomogeneity near T_c, and a potassium-concentration inhomogeneity.

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