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F. Iga

F. Iga contributes to research discovery and scholarly infrastructure.

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cond-mat.str-elcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2021arXiv

Field-induced valence fluctuation in YbB$_{12}$

We performed high-magnetic-field ultrasonic experiments on YbB$_{12}$ up to 59 T to investigate the valence fluctuations in Yb ions. In zero field, the longitudinal elastic constant $C_{11}$, the transverse elastic constants $C_{44}$ and $\left( C_{11} - C_{12} \right)/2$, and the bulk modulus $C_\mathrm{B}$ show a hardening with a change of curvature at around 35 K indicating a small contribution of valence fluctuations to the elastic constants. When high magnetic fields are applied at low temperatures, $C_\mathrm{B}$ exhibits a softening above a field-induced insulator-metal transition signaling field-induced valence fluctuations. Furthermore, at elevated temperatures, the field-induced softening of $C_\mathrm{B}$ takes place at even lower fields and $C_\mathrm{B}$ decreases continuously with field. Our analysis using the multipole susceptibility based on a two-band model reveals that the softening of $C_\mathrm{B}$ originates from the enhancement of multipole-strain interaction in addition to the decrease of the insulator energy gap. This analysis indicates that field-induced valence fluctuations of Yb cause the instability of the bulk modulus $C_\mathrm{B}$.

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preprint2021arXiv

Robust hybridization gap in a Kondo Insulator YbB${}_{12}$ probed by femtosecond optical spectroscopy

In heavy fermions the relaxation dynamics of photoexcited carriers has been found to be governed by the low energy indirect gap, E$_{g}$, resulting from hybridization between localized moments and conduction band electrons. Here, carrier relaxation dynamics in a prototype Kondo insulator YbB${}_{12}$ is studied over large range of temperatures and over three orders of magnitude. We utilize the intrinsic non-linearity of dynamics to quantitatively determine microscopic parameters, such as electron-hole recombination rate. The extracted value reveals that hybridization is accompanied by a strong charge transfer from localized 4f-levels. The results imply the presence of a hybridization gap up to temperatures of the order of E$_{g}$/k$_{B}\approx200$ K, which is extremely robust against electronic excitation. Finally, below 20 K the data reveal changes in the low energy electronic structure, attributed to short-range antiferromagnetic correlations between the localized levels.

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preprint2010arXiv

Different Evolution of Intrinsic Gap in Kondo Semiconductors SmB6 and YbB12

Dependence of the spectral functions on temperature and rare-earth substitution was examined in detail for Kondo semiconductor alloys Sm1-xEuxB6 and Yb1-xLuxB12 by bulk-sensitive photoemission. It is found that the 4f lattice coherence and intrinsic (small) energy gap are robust for SmB6 against the Eu substitution up to x = 0.15 while both collapse by Lu substitution already at x = 0.125 for YbB12. Our results suggest that the mechanism of the intrinsic gap formation is different between SmB6 and YbB12 although they were so far categorized in the same kind of Kondo semiconductors.

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preprint2010arXiv

Stable Existence of Phase IV inside Phase II under Pressure in Ce$_{0.8}$La$_{0.2}$B$_{6}$

We investigate the pressure effect of the electrical resistivity and magnetization of Ce$_{0.8}$La$_{0.2}$B$_{6}$. The situation in which phase IV stably exists inside phase II at H=0 T could be realized by applying a pressure above $P\sim 1.1$ GPa. This originates from the fact that the stability of phase II under pressure is larger than those of phases IV and III. The results seem to be difficult to reproduce by taking the four interactions of $Γ_{\mathrm{5u}}$-type AFO, $O_{xy}$-type AFQ, $T_{xyz}$-type AFO, and AF exchange into account within a mean-field calculation framework.

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