Researcher profile

F. Hengstberger

F. Hengstberger contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2011arXiv

Magnetic measurement of the critical current anisotropy in coated conductors

We determine the critical current anisotropy at maximum Lorentz force from hysteresis loops in a vibrating sample magnetometer. To eliminate the signal of spurious variable Lorentz force currents it is sufficient to cut the sample to a specific length, which is calculated from the position dependent sensitivity of the instrument. The procedure increases the resolution of the measurement and the results compare well to transport data on the same sample. As the electric field in magnetisation measurements is lower than in transport experiments the anisotropy at high currents (low temperatures and fields) can be measured without the need of making current contacts or any special sample preparation.

preprint2010arXiv

Thickness dependence of the critical current density in superconducting films: a geometrical approach

We analyze the influence of the magnetic field generated by the supercurrents (self-field) on the current density distribution by numerical simulations. The thickness of the superconducting film determines the self-field and consequently the critical current density at zero applied field. We find an equation, which derives the thickness dependence of the critical current density from its dependence on the magnetic induction. Solutions of the equation reproduce numerical simulations to great accuracy, thus enabling a quantification of the dependence of the self-field critical current density with increasing film thickness. This result is technologically relevant for the development of coated conductors with thicker superconducting layers.

preprint2009arXiv

Numerical extension of the power law Jc(B) to zero field in thin superconducting films

Numerical simulations of the current and field distribution in thin superconducting films are carried out for a given material law Jc(B) and as a function of the applied field H, taking the sample's self-field into account. The dependence of the critical current density on the applied field Jc(H) is computed for comparison with experiment, considering the geometry of transport measurements. We show that extrapolating the high field power law Jc \propto B^{-α} to the lowest fields results in a finite critical current at zero applied field Jc(H=0), despite the singularity of Jc(B). Moreover, particular features of the experiment, such as a low field plateau in Jc(H), are reproduced and found to be determined by the self-field.