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F. Arciprete

F. Arciprete contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Measurement and simulation of mechanical and optical properties of sputtered amorphous SiC coatings

In this work We report on the extensive characterization of amorphous silicon carbide (a-SiC) coatings prepared by physical deposition methods. We compare the results obtained on two different sputtering systems (a standard RF magnetron sputtering and a ion-beam assisted sputtering) to seize the impact of two different setups on the repeatably of the results. After a thorough characterization of structural, morphological, and compositional characteristics of the prepared samples, we focus on a detailed study of the optical and mechanical losses in those materials. Mechanical losses are further investigated from a microscopic point of view by comparing our experimental results with molecular dynamic simulations of the amorphous SiC structure: first we define a protocol to generate a numerical model of the amorphous film, capturing the main features of the real system; then we simulate its dynamical behaviour upon deformation in order to obtain its mechanical response. Our results are discussed within the perspective application of a-SiC as an optical material for high-precision optical experiments and in particular in gravitational wave interferometry.

preprint2010arXiv

Manipulation of electrical and ferromagnetic properties of photo-sensitized (Ga,Mn)As

We present the manipulation of magnetic and electrical properties of (Ga,Mn)As by the adsorption of dye-molecules as a first step towards the realization of light-controlled magnetic-semiconductor/dye hybrid devices. A significant lowering of the Curie temperature with a corresponding increase in electrical resistance and a higher coercive field is found for the GaMnAs/fluorescein system with respect to (Ga,Mn)As. Upon exposure to visible light a shift in Curie temperature towards higher values and a reduction of the coercive field can be achieved in photo-sensitized (Ga,Mn)As. A mayor change in the XPS spectrum of (Ga,Mn)As indicates the appearance of occupied levels in the energy range corresponding to the (Ga,Mn)As valence band states upon adsorption of fluorescein. This points towards a hole quenching effect at the molecule-(Ga,Mn)As interface which is susceptible to light exposure.