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Source author record

Evgueni V. Chulkov

Evgueni V. Chulkov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.stat-mechcond-mat.str-elhep-thquant-ph

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Published work

8 published item(s)

preprint2018arXiv

Possible Experimental Realization of a Basic Z2 Topological Semimetal

We report experimental and theoretical evidence that GaGeTe is a basic $Z_2$ topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the primer 3D topological insulator Bi2Se3, but important differences account for an unprecedented transport scenario in GaGeTe. High-resolution angle-resolved photoemission spectroscopy combined with advanced band structure calculations show a small indirect energy gap caused by a peculiar band inversion in the \textit{T}-point of the Brillouin zone in GaGeTe. An energy overlap of the valence and conduction bands brings both electron- and hole-like carriers to the Fermi level, while the momentum gap between the corresponding dispersions remains finite. We argue that peculiarities of the electronic spectrum of GaGeTe have a fundamental importance for the physics of topological matter and may boost the material's application potential.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Termination-dependent surface properties in the giant-Rashba semiconductors BiTeX (X = Cl, Br, I)

The non-centrosymmetric semiconductors BiTeX (X = Cl, Br, I) show large Rashba-type spin-orbit splittings in their electronic structure making them candidate materials for spin-based electronics. However, BiTeI(0001) single crystal surfaces usually consist of stacking-fault-induced domains of Te and I terminations implying a spatially inhomogeneous electronic structure. Here we combine scanning tunneling microscopy (STM), photoelectron spectroscopy (ARPES, XPS) and density functional theory (DFT) calculations to systematically investigate the structural and electronic properties of BiTeX(0001) surfaces. For X = Cl, Br we observe macroscopic single-terminated surfaces. We discuss chemical characteristics among the three materials in terms of bonding character, surface electronic structure, and surface morphology.

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preprint2014arXiv

The Density of Surface States in Weyl Semimetals

Weyl semimetal is a three-dimensional material with a conical spectrum near an even number of point nodes, where two bands touch each other. Here we study spectral properties of surface electron states in such a system. We show that the density of surface states possesses a logarithmic singularity for the energy $\varepsilon \to 0$. It decreases linearly at the intermediate energy of surface electron states and approaches zero as $\sqrt{1-\varepsilon}$ for $\varepsilon \to 1$. This universal behavior is a hallmark of the topological order that offers a new wide range of applications.

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preprint2013arXiv

Topological phase states of the SU(3) QCD

We consider the topologically nontrivial phase states and the corresponding topological defects in the SU(3) d-dimensional quantum chromodynamics (QCD). The homotopy groups for topological classes of such defects are calculated explicitly. We have shown that the three nontrivial groups are pi_3 SU(3)=Z, pi_5 SU(3)=Z, and pi_6 SU(3)=Z_6 if 3 < d < 6. The latter result means that we are dealing exactly with six topologically different phase states. The topological invariants for d=3,5,6 are described in detail.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Ideal two-dimensional electron systems with a giant Rashba-type spin splitting in real materials: surfaces of bismuth tellurohalides

Spintronics is aimed at active controlling and manipulating the spin degrees of freedom in semiconductor devices. A promising way to achieve this goal is to make use of the tunable Rashba effect that relies on the spin-orbit interaction (SOI) in a two-dimensional (2D) electron system immersed in an inversion-asymmetric environment. The SOI induced spin-splitting of the 2D-electron state provides a basis for many theoretically proposed spintronic devices. However, the lack of semiconductors with large Rashba effect hinders realization of these devices in actual practice. Here we report on a giant Rashba-type spin splitting in 2D electron systems which reside at tellurium-terminated surfaces of bismuth tellurohalides. Among these semiconductors, BiTeCl stands out for its isotropic metallic surface-state band with the Gamma-point energy lying deep inside the bulk band gap. The giant spin-splitting of this band ensures a substantial spin asymmetry of the inelastic mean free path of quasiparticles with different spin orientations.

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preprint2012arXiv

Surface and bulk Fermiology and band dispersion in non-centrosymmetric BiTeI

BiTeI has a layered and non-centrosymmetric structure where strong spin-orbit interaction leads to a giant spin splitting in the bulk bands. Here we present high-resolution angle-resolved photoemission (ARPES) data in the UV and soft x-ray regime that clearly disentangle the surface from the bulk electronic structure. Spin-resolved UV-ARPES measurements on opposite, non-equivalent surfaces show identical spin structures, thus clarifying the surface state character. Soft x-ray ARPES data clearly reveal the spindle-torus shape of the bulk Fermi surface, induced by the spin-orbit interaction.

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preprint2010arXiv

Image potential states as quantum probe of graphene interfaces

Image potential states (IPSs) are electronic states localized in front of a surface in a potential well formed by the surface projected bulk band gap on one side and the image potential barrier on the other. In the limit of a two-dimensional solid a double Rydberg series of IPSs has been predicted which is in contrast to a single series present in three-dimensional solids. Here, we confirm this prediction experimentally for mono- and bilayer graphene. The IPSs of epitaxial graphene on SiC are measured by scanning tunnelling spectroscopy and the results are compared to ab-initio band structure calculations. Despite the presence of the substrate, both calculations and experimental measurements show that the first pair of the double series of IPSs survives, and eventually evolves into a single series for graphite. Thus, IPSs provide an elegant quantum probe of the interfacial coupling in graphene systems.

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