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Euyheon Hwang

Euyheon Hwang contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Quantum readout error mitigation via deep learning

Quantum computing devices are inevitably subject to errors. To leverage quantum technologies for computational benefits in practical applications, quantum algorithms and protocols must be implemented reliably under noise and imperfections. Since noise and imperfections limit the size of quantum circuits that can be realized on a quantum device, developing quantum error mitigation techniques that do not require extra qubits and gates is of critical importance. In this work, we present a deep learning-based protocol for reducing readout errors on quantum hardware. Our technique is based on training an artificial neural network with the measurement results obtained from experiments with simple quantum circuits consisting of singe-qubit gates only. With the neural network and deep learning, non-linear noise can be corrected, which is not possible with the existing linear inversion methods. The advantage of our method against the existing methods is demonstrated through quantum readout error mitigation experiments performed on IBM five-qubit quantum devices.

preprint2017arXiv

Carrier and strain tunable intrinsic magnetism in two-dimensional MAX$_3$ transition metal chalcogenides

We present a density functional theory study of the carrier-density and strain dependence of magnetic order in two-dimensional (2D) MAX$_3$ (M= V, Cr, Mn, Fe, Co, Ni; A= Si, Ge, Sn, and X= S, Se, Te) transition metal trichalcogenides. Our {\em ab initio} calculations show that this class of compounds includes wide and narrow gap semiconductors and metals and half-metals, and that most of these compounds are magnetic. Although antiferromagnetic order is most common, ferromagnetism is predicted in MSiSe$_3$ for M= Mn, Ni, in MSiTe$_3$ for M= V, Ni, in MnGeSe$_3$, in MGeTe$_3$ for M=Cr, Mn, Ni, in FeSnS$_3$, and in MSnTe$_3$ for M= V, Mn, Fe. Among these compounds CrGeTe$_3$ and VSnTe$_3$ are ferromagnetic semiconductors. Our calculations suggest that the competition between antiferromagnetic and ferromagnetic order can be substantially altered by strain engineering, and in the semiconductor case also by gating. The associated critical temperatures can be substantially enhanced by means of carrier doping and strains.