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Eunseong Kim

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cond-mat.supr-con cond-mat.other physics.ins-det quant-ph

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preprint2024arXiv

Measurement-induced bistability in the excited states of a transmon

High power measurement-induced cavity response is investigated in the |g>, |e>, and |f> states of a transmon. All the states exhibit photon blockades above a certain critical value, a phenomenon that has previously been understood based on the bistability of semiclassical Duffing oscillators. The measurement-induced state transition (MIST) to high-level transmon states is expected to be one contributor to the bistability; however, the critical values measured in the |e> and |f> states are not coincident with the MIST. To understand this discrepancy, we utilize the recently developed semiclassical dynamics model of a cavity photon state. The appearance of dim and bright cavity states obtained from the model's steady-state solution leads to the photon blockades at lower critical photon numbers, and this can explain the response of the bistable region in the |e> and |f> states.

preprint2016arXiv

Optimization of infrared and magnetic shielding of superconducting TiN and Al coplanar microwave resonators

We present a systematic study of the effects of shielding on the internal quality factors (Qi) of Al and TiN microwave resonators designed for use in quantum coherent circuits. Measurements were performed in an adiabatic demagnetization refrigerator, where typical magnetic fields of 200 μT are present at the unshielded sample stage. Radiation shielding consisted of 100 mK and 500 mK Cu cans coated with infrared absorbing epoxy. Magnetic shields consisted of Cryoperm 10 and Sn plating of the Cu cans. A 2.7 K radiation can and coaxial thermalization filters were present in all measurements. TiN samples with Qi = $1.3*10^6$ at 100 mK exhibited no significant variation in quality factor when tested with limited shielding. In contrast, Al resonators showed improved Qi with successive shielding, with the largest gains obtained from the addition of the first radiation and magnetic shields and saturating before the addition of Sn plating infrared absorbing epoxy.

preprint2016arXiv

Simultaneous investigation of shear modulus and torsional resonance of solid 4He

We investigate the origin of a resonant period drop of a torsional oscillator (TO) containing solid ${}^{4}$He by inspecting its relation to a change in elastic modulus. To understand this relationship directly, we measure both phenomena simultaneously using a TO with a pair of concentric piezoelectric transducers inserted in its annulus. Although the temperature, ${}^{3}$He concentration, and frequency dependence are essentially the same, a marked discrepancy in the drive amplitude dependence is observed. We find that this discrepancy originates from the anisotropic response of polycrystalline solid ${}^{4}$He connected with low-angle grain boundaries by studying the shear modulus parallel to and perpendicular to the driving direction.

preprint2014arXiv

Scaling analysis of field-induced superconductor-insulator transition in two-dimensional tantalum thin films

The superconductor-insulator (SI) transition in two-dimensional Ta thin films is investigated by controlling both film thickness and magnetic field. An intriguing metallic phase intervening superconductor and an insulator phase is observed within a narrow range of film thickness and magnetic field. Finite scaling analysis has been performed to investigate the nature of the SI transition in the thickness-tuned metallic and superconducting samples. The critical exponents in the disorder-induced metallic samples are clearly different from the exponents obtained in the superconducting samples. Dynamical exponent z of the superconducting samples is consistent with the theoretical predictions (z = 1), while the exponent for the metallic samples is approximately 0.7. The discrepancy in the transition behaviors supports that the disorder induced metallic phase cannot be classified to the same universality class of the superconducting Ta thin films.

preprint2012arXiv

Microscopic description of stress- and temperature-dependent shear modulus in solid 4He

We developed a detailed microscopic method that describes the shear modulus anomaly of solid helium at low temperature. The shear modulus was calculated using the pinning length of dislocations determined in detail for both crossing network nodes and 3He impurities. The strong suppression of the shear modulus is reproduced well as the temperature or stress increases. The shear modulus at low temperatures depends strongly on how the state was prepared. All the key features in the stress hysteresis can be quantitatively explained in terms of the thermomechanical path-dependent pinning length of dislocation networks.