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Researcher profile

Eunseong Kim

Eunseong Kim contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.otherquant-ph

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Published work

3 published item(s)

preprint2024arXiv

Measurement-induced bistability in the excited states of a transmon

High power measurement-induced cavity response is investigated in the |g>, |e>, and |f> states of a transmon. All the states exhibit photon blockades above a certain critical value, a phenomenon that has previously been understood based on the bistability of semiclassical Duffing oscillators. The measurement-induced state transition (MIST) to high-level transmon states is expected to be one contributor to the bistability; however, the critical values measured in the |e> and |f> states are not coincident with the MIST. To understand this discrepancy, we utilize the recently developed semiclassical dynamics model of a cavity photon state. The appearance of dim and bright cavity states obtained from the model's steady-state solution leads to the photon blockades at lower critical photon numbers, and this can explain the response of the bistable region in the |e> and |f> states.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Scaling analysis of field-induced superconductor-insulator transition in two-dimensional tantalum thin films

The superconductor-insulator (SI) transition in two-dimensional Ta thin films is investigated by controlling both film thickness and magnetic field. An intriguing metallic phase intervening superconductor and an insulator phase is observed within a narrow range of film thickness and magnetic field. Finite scaling analysis has been performed to investigate the nature of the SI transition in the thickness-tuned metallic and superconducting samples. The critical exponents in the disorder-induced metallic samples are clearly different from the exponents obtained in the superconducting samples. Dynamical exponent z of the superconducting samples is consistent with the theoretical predictions (z = 1), while the exponent for the metallic samples is approximately 0.7. The discrepancy in the transition behaviors supports that the disorder induced metallic phase cannot be classified to the same universality class of the superconducting Ta thin films.

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preprint2012arXiv

Microscopic description of stress- and temperature-dependent shear modulus in solid 4He

We developed a detailed microscopic method that describes the shear modulus anomaly of solid helium at low temperature. The shear modulus was calculated using the pinning length of dislocations determined in detail for both crossing network nodes and 3He impurities. The strong suppression of the shear modulus is reproduced well as the temperature or stress increases. The shear modulus at low temperatures depends strongly on how the state was prepared. All the key features in the stress hysteresis can be quantitatively explained in terms of the thermomechanical path-dependent pinning length of dislocation networks.

0 citations0 reviewsNo code linkedOpen access