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Ethem Akturk

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cond-mat.mtrl-sci cond-mat.str-el

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preprint2022arXiv

Skyrmion formation in Ni-based Janus dihalide monolayers: Interplay between magnetic frustration and Dzyaloshinskii-Moriya interaction

We present a comprehensive theory of the magnetic phases in monolayer nickel-based Janus dihalides (NiIBr, NiICl, NiBrCl) through a combination of first-principles calculations and atomistic simulations. Phonon band structure calculations and finite temperature molecular dynamics simulations show that Ni-dihalide Janus monolayers are stable. The parameters of the interacting spin Hamiltonian extracted from ab initio calculations show that nickel-dihalide Janus monolayers exhibit varying degrees of magnetic frustration together with a large Dzyaloshinskii-Moriya interaction due to their inherent inversion symmetry breaking. The atomistic simulations reveal a delicate interplay between these two competing magnetic interactions in giving rise to skyrmion formation.

preprint2016arXiv

Effects of the Substitutions and Vacany Defects on the Stable monolayer structures of Black and Blue Arsenic Phosphorus: A First Principles Study

We investigate two dimensional monolayer structures of arsenic phosphorus ( AsP) by means of first principles plane wave method within density functional theory using the generalized gradient approximation. Two structures of arsenic phosphorus are taken into account which are called buckled (B-AsP) and puckered (Pu-AsP). From our numerical calculations we predicted the optimized states of a single-layer buckled and puckered honeycomb like allotropes of AsP. We demonstrate that buckled and puckered arsenic phosphorus are semiconducting single layers with band gap energies 1.858 eV and 0.924 eV, respectively. Especially, we have found that the puckered monolayer has a direct band gap. Furhermore, we examined the electronic and magnetic properties of various kind of point defects including single and double vacancies, antisite and substitutions on both buckled and puckered arsenic phosphorus. We conclude that AsP monolayers can attain magnetic state with vacancies and the semiconductor nature can turn into metal with diverse defect types. In considered system also the band gap of B-AsP can be tuned from metal character to 1.858 eV and for Pu-AsP from metal to 0.924 eV which these ranges are especially important for radar and atmosferic applications.

preprint2009arXiv

Two and one-dimensional honeycomb structures of silicon and germanium

Based on first-principles calculations of structure optimization, phonon modes and finite temperature molecular dynamics, we predict that silicon and germanium have stable, two-dimensional, low-buckled, honeycomb structures. Similar to graphene, they are ambipolar and their charge carriers can behave like a massless Dirac fermions due to their pi- and pi*-bands which are crossed linearly at the Fermi level. In addition to these fundamental properties, bare and hydrogen passivated nanoribbons of Si and Ge show remarkable electronic and magnetic properties, which are size and orientation dependent. These properties offer interesting alternatives for the engineering of diverse nanodevices.