Researcher profile

Esteban Garzón

Esteban Garzón contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author
3works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2022arXiv

A 0.6V$-$1.8V Compact Temperature Sensor with 0.24°C Resolution, $\pm$1.4°C Inaccuracy and 1.06nJ per Conversion

This paper presents a fully-integrated CMOS temperature sensor for densely-distributed thermal monitoring in systems on chip supporting dynamic voltage and frequency scaling. The sensor front-end exploits a sub-threshold PMOS-based circuit to convert the local temperature into two biasing currents. These are then used to define two oscillation frequencies, whose ratio is proportional to absolute-temperature. Finally, the sensor back-end translates such frequency ratio into the digital temperature code. Thanks to its low-complexity architecture, the proposed design achieves a very compact footprint along with low-power consumption and high accuracy in a wide temperature range. Moreover, thanks to a simple embedded line regulation mechanism, our sensor supports voltage-scalability. The design was prototyped in a 180nm CMOS technology with a 0°C $-$ 100°C temperature detection range, a very wide supply voltage operating range from 0.6V up to 1.8V and very small silicon area occupation of just 0.021$mm^2$. Experimental measurements performed on 20 test chips have shown very competitive figures of merit, including a resolution of 0.24°C, an inaccuracy of $\pm$1.4°C, a sampling rate of about 1.5kHz and an energy per conversion of 1.06nJ at 30°C.

preprint2022arXiv

Adjusting Thermal Stability in Double-Barrier MTJ for Energy Improvement in Cryogenic STT-MRAMs

This paper investigates the impact of thermal stability relaxation in double-barrier magnetic tunnel junctions (DMTJs) for energy-efficient spin-transfer torque magnetic random access memories (STT-MRAMs) operating at the liquid nitrogen boiling point (77K). Our study is carried out through a macrospin-based Verilog-A compact model of DMTJ, along with a 65nm commercial process design kit (PDK) calibrated down to 77K under silicon measurements. Comprehensive bitcell-level electrical characterization is used to estimate the energy/latency per operation and leakage power at the memory architecture-level. As a main result of our analysis, we show that energy-efficient small-to-large embedded memories can be obtained by significantly relaxing the non-volatility requirement of DMTJ devices at room temperature (i.e., by reducing the cross-section area), while maintaining the typical 10-years retention time at cryogenic temperatures. This makes DMTJ-based STT-MRAM operating at 77K more energy-efficient than six-transistors static random-access memory (6T-SRAM) under both read and write accesses (-56% and -37% on average, respectively). Obtained results thus prove that DMTJ-based STT-MRAM with relaxed retention time is a promising alternative for the realization of reliable and energy-efficient embedded memories operating at cryogenic temperatures.

preprint2021arXiv

Hamming Distance Tolerant Content-Addressable Memory (HD-CAM) for Approximate Matching Applications

We propose a novel Hamming distance tolerant content-addressable memory (HD-CAM) for energy-efficient in memory approximate matching applications. HD-CAM implements approximate search using matchline charge redistribution rather than its rise or fall time, frequently employed in state of-the-art solutions. HD-CAM was designed in a 65 nm 1.2 V CMOS technology and evaluated through extensive Monte Carlo simulations. Our analysis shows that HD-CAM supports robust operation under significant process variations and changes in the design parameters, enabling a wide range of mismatch threshold (tolerable Hamming distance) levels and pattern lengths. HD-CAM was functionally evaluated for virus DNA classification, which makes HD-CAM suitable for hardware acceleration of genomic surveillance of viral outbreaks such as Covid-19 pandemics.