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Erik Johnson

Erik Johnson contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci hep-ex physics.acc-ph physics.ins-det

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preprint2020arXiv

Shadow epitaxy for in-situ growth of generic semiconductor/superconductor devices

Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminium heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations. We present a crystal growth platform -- based on three-dimensional structuring of growth substrates -- which enables synthesis of semiconductor nanowire hybrids with in-situ patterned superconductor shells. This platform eliminates the need for etching, thereby enabling full freedom in choice of hybrid constituents. We realise and characterise all the most frequently used architectures in superconducting hybrid devices, finding increased yield and electrostatic stability compared to etched devices, along with evidence of ballistic superconductivity. In addition to aluminium, we present hybrid devices based on tantalum, niobium and vanadium. This is the submitted version of the manuscript. The accepted, peer reviewed version is available from Advanced Materials: http://doi.org/10.1002/adma.201908411 Previous title: Shadow lithography for in-situ growth of generic semiconductor/superconductor devices

preprint2016arXiv

Laser Pulsing in Linear Compton Scattering

Previous work on calculating energy spectra from Compton scattering events has either neglected considering the pulsed structure of the incident laser beam, or has calculated these effects in an approximate way subject to criticism. In this paper, this problem has been reconsidered within a linear plane wave model for the incident laser beam. By performing the proper Lorentz transformation of the Klein-Nishina scattering cross section, a spectrum calculation can be created which allows the electron beam energy spread and emittance effects on the spectrum to be accurately calculated, essentially by summing over the emission of each individual electron. Such an approach has the obvious advantage that it is easily integrated with a particle distribution generated by particle tracking, allowing precise calculations of spectra for realistic particle distributions in collision. The method is used to predict the energy spectrum of radiation passing through an aperture for the proposed Old Dominion University inverse Compton source. Many of the results allow easy scaling estimates to be made of the expected spectrum.

preprint2013arXiv

Advances in the theory of III-V Nanowire Growth Dynamics

Nanowire (NW) crystal growth via the vapour_liquid_solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various aspects of the growth mechanisms, both experimentally and theoretically. We will here propose a general continuum formalism for growth kinetics based on thermodynamic parameters and transition state kinetics. We use the formalism together with key elements of recent research to present a more overall treatment of III_V NW growth, which can serve as a basis to model and understand the dynamical mechanisms in terms of the basic control parameters, temperature and pressures/beam fluxes. Self-catalysed GaAs NW growth on Si substrates by molecular beam epitaxy is used as a model system.

preprint2013arXiv

Direct Observation of Interface and Nanoscale Compositional Modulation in Ternary III-As Heterostructure Nanowires

Straight, axial InAs nanowire with multiple segments of GaInAs were grown. High resolution X-ray energy-dispersive spectroscopy (EDS) mapping reveal the distribution of group III atoms at the axial interfaces and at the sidewalls. Significant Ga enrichment, accompanied by a structural change is observed at the GaInAs/InAs interfaces and a higher Ga concentration for the early grown GaInAs segments. The elemental map and EDS line profile infer Ga enrichment at the facet junctions between the sidewalls. The relative chemical potentials of ternary alloys and the thermodynamic driving force for liquid to solid transition explains the growth mechanisms behind the enrichment.

preprint2009arXiv

The LCFIVertex package: vertexing, flavour tagging and vertex charge reconstruction with an ILC vertex detector

The precision measurements envisaged at the International Linear Collider (ILC) depend on excellent instrumentation and reconstruction software. The correct identification of heavy flavour jets, placing unprecedented requirements on the quality of the vertex detector, will be central for the ILC programme. This paper describes the LCFIVertex software, which provides tools for vertex finding and for identification of the flavour and charge of the leading hadron in heavy flavour jets. These tools are essential for the ongoing optimisation of the vertex detector design for linear colliders such as the ILC. The paper describes the algorithms implemented in the LCFIVertex package, as well as the scope of the code and its performance for a typical vertex detector design.

preprint2006arXiv

Surface and bulk melting of small metal clusters

We present an analytical solution to the two-parabola Landau model, applied to melting of metal particles with sizes in the nanoscale range. The results provide an analytical understanding of the recently observed pseudo-crystalline phase of nanoscale Sn particles. Liquid skin formation as a precursor of melting is found to occur only for particles with radii, greater than an explicitly given critical radius. The size effect of the melting temperature and the latent heat has been calculated and quantitative agreement with experiments on Sn particles was found.