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Eric Tea

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Published work

4 published item(s)

preprint2018arXiv

Combined ab initio and empirical model of the thermal conductivity of uranium, uranium-zirconium, and uranium-molybdenum

In this work we developed a practical and general modeling approach for thermal conductivity of metals and metal alloys that integrates ab initio and semiempirical physics-based models to maximize the strengths of both techniques. The approach supports creation of highly accurate, mechanistic, and extensible thermal conductivity modeling of alloys. The model was demonstrated on α-U and U-rich U-Zr and U-Mo alloys, which are potential fuels for advanced nuclear reactors. The safe use of U-based fuels requires quantitative understanding of thermal transport characteristics of the fuel. The model incorporated both phonon and electron contributions, displayed good agreement with experimental data over a wide temperature range, and provided insight into the different physical factors that govern the thermal conductivity under different temperatures. This model is general enough to incorporate more complex effects like additional alloying species, defects, transmutation products, and noble gas bubbles to predict the behavior of complex metallic alloys like U-alloy fuel systems under burnup.

preprint2016arXiv

Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study

In this work, we provide a detailed analysis of phosphorene performance as n-type and p-type active materials. The study is based on first principles calculation of phosphorene electronic structure, and resulting electron and hole scattering rates and lifetimes. Emphasis is put on extreme regimes commonly found in semiconductor devices, i.e. high electric fields and heavy doping, where impact ionization and Auger recombination can occur. We found that electron-initiated impact ionization is weaker than the hole-initiated process, when compared to carrier-phonon interaction rates, suggesting resilience to impact ionization initiated breakdown. Moreover, calculated minority electron lifetimes are limited by radiative recombination only, not by Auger processes, suggesting that phosphorene could achieve good quantum efficiencies in optoelectronic devices. The provided scattering rates and lifetimes are critical input data for the modeling and understanding of phosphorene-based device physics.

preprint2016arXiv

First principle thermodynamic study of oxygen vacancy at metal/oxide interface

The oxygen vacancy is a crucial intrinsic defect in metal-ultrathin oxide semiconductor heterostructures, and its formation at an interface is of great importance in determining the device performance and degradation. This paper presents an ab initio thermodynamic study of oxygen vacancies at metal/oxide interfaces. Electronic energies and entropies are calculated for defective interface systems, as a function of interface-vacancy distance. The study indicates that oxygen vacancies near the interface modify its bonding structure, and significantly change the thermodynamic properties of the system (i.e., electronic energy and entropy) compared to bulk-like oxygen vacancies. We illustrate that different factors, including the vacancy location dependence on the energy and entropy, the temperature dependence on the entropy, and the temperature and partial pressure dependence on the oxygen chemical potential, are all important in determining the Gibbs free energy of formation of oxygen vacancy.

preprint2016arXiv

First principles study of band line up at defective metal-oxide interface: oxygen point defects at Al/SiO_2 interface

The dielectric breakdown at metal-oxide interfaces is a critical electronic device failure mechanism. Electronic tunneling through dielectric layers is a well-accepted explanation for this phenomenon. Theoretical band alignment studies, providing information about tunneling, have already been conducted in the literature for metal-oxide interfaces. However, most of the time materials were assumed defect free. Oxygen vacancies being very common in oxides, their effect on band lineup is of prime importance in understanding electron tunneling in realistic materials and devices. This work explores the effect of oxygen vacancy and oxygen di-vacancy at the Al/SiO2 interface on the band line up within Density Functional Theory using PBE0 hybrid exchange and correlation functional. It is found that the presence of defects at the interface, and their charge state, strongly alters the band line up.