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Eric A. Kittlaus

Eric A. Kittlaus appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticsphysics.app-phcond-mat.mtrl-sci

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Published work

7 published item(s)

preprint2020arXiv

Electrically-driven Acousto-optics and Broadband Non-reciprocity in Silicon Photonics

Emerging technologies based on tailorable interactions between photons and phonons promise new capabilities ranging from high-fidelity microwave signal processing to non-reciprocal optics and quantum state control. While such light-sound couplings have been studied in a variety of physical systems, many implementations rely on non-standard materials and fabrication schemes that are challenging to co-implement with standard integrated photonic circuitry. Notably, despite significant advances in integrated electro-optic modulators, related acousto-optic modulator concepts have remained relatively unexplored in silicon photonics. In this article, we demonstrate direct acousto-optic modulation within silicon waveguides using electrically-driven surface acoustic waves (SAWs). By co-integrating SAW transducers in piezoelectric AlN with a standard silicon-on-insulator photonic platform, we harness silicon's strong elasto-optic effect to mediate linear light-sound coupling. Through lithographic design, acousto-optic phase and single-sideband amplitude modulators in the range of 1-5 GHz are fabricated, exhibiting index modulation strengths comparable to existing electro-optic technologies. Extending this traveling-wave, acousto-optic interaction to cm-scales, we create electrically-driven non-reciprocal modulators in silicon. Non-reciprocal operation bandwidths of >100 GHz and insertion losses <0.6 dB are achieved. Building on these results, we show that unity-efficiency non-reciprocal modulation, necessary for a robust acousto-optic isolator, is within reach. The acousto-optic modulator design is compatible with both CMOS fabrication and existing silicon photonic device technologies. These results represent a promising new approach to implement compact and scalable acousto-optic modulators, frequency-shifters, and non-magnetic optical isolators and circulators in integrated photonic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Microwave filtering using forward Brillouin scattering in photonic-phononic emit-receive devices

Microwave photonic systems are compelling for their ability to process signals at high frequencies and over extremely wide bandwidths as a basis for next generation communication and radar technologies. However, many applications also require narrow-band $(\sim\text{MHz})$ filtering operations that are challenging to implement using optical filtering techniques, as this requires reliable integration of ultra-high quality factor $(\sim 10^8)$ optical resonators. One way to address this challenge is to utilize long-lived acoustic resonances, taking advantage of their narrow-band frequency response to filter microwave signals. In this paper, we examine new strategies to harness a narrow-band acoustic response within a microwave-photonic signal processing platform through use of light-sound coupling. Our signal processing scheme is based on a recently demonstrated photon-phonon emitter-receiver device, which transfers information between the optical and acoustic domains using Brillouin interactions, and produces narrow-band filtering of a microwave signal. To understand the best way to use this device technology, we study the properties of a microwave-photonic link using this filtering scheme. We theoretically analyze the noise characteristics of this microwave-photonic link, and explore the parameter space for the design and optimization of such systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunable RF-photonic filtering with high out-of-band rejection in silicon

The ever-increasing demand for high speed and large bandwidth has made photonic systems a leading candidate for the next generation of telecommunication and radar technologies. The photonic platform enables high performance while maintaining a small footprint and provides a natural interface with fiber optics for signal transmission. However, producing sharp, narrow-band filters that are competitive with RF components has remained challenging. In this paper, we demonstrate all-silicon RF-photonic multi-pole filters with $\sim100\times$ higher spectral resolution than previously possible in silicon photonics. This enhanced performance is achieved utilizing engineered Brillouin interactions to access long-lived phonons, greatly extending the available coherence times in silicon. This Brillouin-based optomechanical system enables ultra-narrow (3.5 MHz) multi-pole response that can be tuned over a wide ($\sim10$ GHz) spectral band. We accomplish this in an all-silicon optomechanical waveguide system, using CMOS compatible fabrication techniques. In addition to bringing greatly enhanced performance to silicon photonics, we demonstrate reliability and robustness, necessary to transition silicon-based optomechanical technologies from the scientific bench-top to high-impact field-deployable technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Shaping nonlinear optical response using nonlocal forward Brillouin interactions

We grow accustomed to the notion that optical susceptibilities can be treated as a local property of a medium. In the context of nonlinear optics, both Kerr and Raman processes are considered local, meaning that optical fields at one location do not produce a nonlinear response at distinct locations in space. This is because the electronic and phononic disturbances produced within the material are confined to a region that is smaller than an optical wavelength. By comparison, Brillouin interactions can result in a highly nonlocal nonlinear response, as the elastic waves generated through the Brillouin process can occupy a region in space much larger than an optical wavelength. The nonlocality of these interactions can be exploited to engineer new types of processes, where highly delocalized phonon modes serve as an engineerable channel that mediates scattering processes between light waves propagating in distinct optical waveguides. These types of nonlocal optomechanical responses have been recently demonstrated as the basis for information transduction, however the nontrivial dynamics of such systems has yet to be explored. In this work, we show that the third-order nonlinear process resulting from spatially extended Brillouin-active phonon modes involves mixing products from spatially separated, optically decoupled waveguides, yielding a nonlocal 'joint-susceptibility'. We further explore the coupling of multiple acoustic modes and show that multi-mode acoustic interference enables a tailorable nonlocal-nonlinear susceptibility, exhibiting a multi-pole frequency response.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Large Brillouin Amplification in Silicon

Strong Brillouin coupling has only recently been realized in silicon using a new class of optomechanical waveguides that yield both optical and phononic confinement. Despite these major advances, appreciable Brillouin amplification has yet to be observed in silicon. Using a new membrane-suspended silicon waveguide we report large Brillouin amplification for the first time, reaching levels greater than 5 dB for modest pump powers, and demonstrate a record low (5 mW) threshold for net amplification. This work represents a crucial advance necessary to realize high-performance Brillouin lasers and amplifiers in silicon.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Diffusion of degenerate minority carriers in a p-type semiconductor

We report ultrafast transient-grating experiments on heavily p-type InP at 15 K. Our measurement reveals the dynamics and diffusion of photoexcited electrons and holes as a function of their density n in the range 2E16 to 6E17 cm-3. After the first few picoseconds the grating decays primarily due to ambipolar diffusion. While at low density we observe a regime in which the ambipolar diffusion is electron-dominated and increases rapidly with n, at high n it appears to saturate at 34 cm2/s. We present a simple calculation that reproduces the main results of our measurements as well as of previously published measurements that had shown diffusion to be a flat or decreasing function of n. By accounting for effect of density on charge susceptibility we show that, in p-type semiconductors, the regime we observe of increasing ambipolar diffusion is unique to heavy doping and low temperature, where both the holes and electrons are degenerate; in this regime the electronic and ambipolar diffusion are nearly equal. The saturation is identified as a crossover to ambipolar diffusion dominated by the majority carriers, the holes. At short times the transient-grating signal rises gradually. This rise reveals cooling of hot electrons and, at high photocarrier density, allows us to measure ambipolar diffusion of 110 cm2/s in the hot-carrier regime.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Rapid diffusion of electrons in GaMnAs

We report ultrafast transient-grating measurements, above and below the Curie temperature, of the dilute ferromagnetic semiconductor (Ga,Mn)As containing 6% Mn. At 80 K (15 K), we observe that photoexcited electrons in the conduction band have a lifetime of 8 ps (5 ps) and diffuse at about 70 cm2/s (60 cm2/s). Such rapid diffusion requires either an electronic mobility exceeding 7,700 cm2/Vs or a conduction-band effective mass less than half the GaAs value. Our data suggest that neither the scattering rate nor the effective mass of the (Ga,Mn)As conduction band differs significantly from that of GaAs.

0 citations0 reviewsNo code linkedOpen access