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Erfu Liu

Erfu Liu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

8 published item(s)

preprint2021arXiv

Electric-field-tunable intervalley excitons and phonon replicas in bilayer WSe$_2$

We report the direct observation of intervalley exciton between the Q conduction valley and $Γ$ valence valley in bilayer WSe$_2$ by photoluminescence. The Q$Γ$ exciton lies at ~18 meV below the QK exciton and dominates the luminescence of bilayer WSe$_2$. By measuring the exciton spectra at gate-tunable electric field, we reveal different interlayer electric dipole moments and Stark shifts between Q$Γ$ and QK excitons. Notably, we can use the electric field to switch the energy order and dominant luminescence between Q$Γ$ and QK excitons. Both Q$Γ$ and QK excitons exhibit pronounced phonon replicas, in which two-phonon replicas outshine the one-phonon replicas due to the existence of (nearly) resonant exciton-phonon scatterings and numerous two-phonon scattering paths. We can simulate the replica spectra by comprehensive theoretical modeling and calculations. The good agreement between theory and experiment for the Stark shifts and phonon replicas strongly supports our assignment of Q$Γ$ and QK excitons.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate-tunable exciton-polaron Rydberg series with strong roton effect

The electronic exciton polaron is a hypothetical many-body quasiparticle formed by an exciton dressed with a polarized electron-hole cloud in the Fermi sea (FS). It is predicted to display rich many-body physics and unusual roton-like dispersion. Exciton polarons were recently evoked to explain the excitonic spectra of doped monolayer transition metal dichalcogenides (TMDs), but these studies are limited to the ground state. Excited-state exciton polarons can exhibit richer many-body physics due to their larger spatial extent, but detection is challenging due to their inherently weak signals. Here we observe gate-tunable exciton polarons for the 1s - 3s excitonic Rydberg series in ultraclean monolayer MoSe$_2$ devices by optical spectroscopy. When the FS expands, we observe increasingly severe suppression and steep energy shift from low to high Rydberg states. Their gate-dependent energy shifts go beyond the trion description but match our exciton-polaron theory. Notably, the exciton-polaron absorption and emission bands are separated with an energy gap, which increases from ground to excited state. Such peculiar characteristics are attributed to the roton-like exciton-polaron dispersion, where energy minima occur at finite momenta. The roton effect increases from ground to excited state. Such exciton-polaron Rydberg series with progressively significant many-body and roton effect shall provide a new platform to explore complex many-body phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Landau-quantized excitonic absorption and luminescence in a monolayer valley semiconductor

We investigate Landau-quantized excitonic absorption and luminescence of monolayer WSe$_2$ under magnetic field. We observe gate-dependent quantum oscillations in the bright exciton and trions (or exciton-polarons) as well as the dark trions and their phonon replicas. Our results reveal spin- and valley-polarized Landau levels (LLs) with filling factors $n = +0, +1$ in the bottom conduction band and $n = -0$ to $-6$ in the top valence band, including the Berry-curvature-induced $n = \pm0$ LLs of massive Dirac fermions. The LL filling produces periodic plateaus in the exciton energy shift accompanied by sharp oscillations in the exciton absorption width and magnitude. This peculiar exciton behavior can be simulated by semi-empirical calculations. The experimentally deduced g-factors of the conduction band (g ~ 2.5) and valence band (g ~ 15) exceed those predicted in a single-particle model (g = 1.5, 5.5, respectively). Such g-factor enhancement implies strong many-body interactions in gated monolayer WSe$_2$. The complex interplay between Landau quantization, excitonic effects, and many-body interactions makes monolayer WSe$_2$ a promising platform to explore novel correlated quantum phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Multipath optical recombination of intervalley dark excitons and trions in monolayer WSe$_2$

Excitons and trions (or exciton-polarons) in transition metal dichalcogenides (TMDs) are known to decay predominantly through intravalley transitions. Electron-hole recombination across different valleys can also play a significant role in the excitonic dynamics, but intervalley transitions are rarely observed in monolayer TMDs, because they violate the conservation of momentum. Here we reveal the intervalley recombination of dark excitons and trions through more than one path in monolayer WSe$_2$. We observe the intervalley dark excitons, which can recombine by the assistance of defect scattering or chiral-phonon emission. We also reveal that a trion can decay in two distinct paths - through intravalley or intervalley electron-hole recombination - into two different final valley states. Although these two paths are energy degenerate, we can distinguish them by lifting the valley degeneracy under a magnetic field. In addition, the intra- and inter-valley trion transitions are coupled to zone-center and zone-corner chiral phonons, respectively, to produce distinct phonon replicas. The observed multipath optical decays of dark excitons and trions provide much insight into the internal quantum structure of trions and the complex excitonic interactions with defects and chiral phonons in monolayer valley semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2

The progress in exploiting new electronic materials and devices has been a major driving force in solid-state physics. As a new state of matter, a Weyl semimetal (WSM), particularly a type-II WSM, hosts Weyl fermions as emergent quasiparticles and may harbor novel electrical transport properties because of the exotic Fermi surface. Nevertheless, such a type-II WSM material has not been experimentally observed in nature. In this work, by performing systematic magneto-transport studies on thin films of a predicted material candidate WTe2, we observe notable angle-sensitive (between the electric and magnetic fields) negative longitudinal magnetoresistance (MR), which can likely be attributed to the chiral anomaly in WSM. This phenomenon also exhibits strong planar orientation dependence with the absence of negative longitudinal MR along the tungsten chains (a axis), which is consistent with the distinctive feature of a type-II WSM. By applying a gate voltage, we demonstrate that the Fermi energy can be tuned through the Weyl points via the electric field effect; this is the first report of controlling the unique transport properties in situ in a WSM system. Our results have important implications for investigating simulated quantum field theory in solid-state systems and may open opportunities for implementing new types of electronic applications, such as field-effect chiral electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as top candidates for post-silicon electronics. While most of 2D TMDs exhibit isotropic behavior, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here, we present atomically thin rhenium disulfide (ReS2) flakes with a unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated mono- and few-layer ReS2 field effect transistors (FETs), which exhibit competitive performance with large current on/off ratios (~107) and low subthreshold swings (100 mV dec-1). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known 2D semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS2 anisotropic FETs, suggesting the promising implementation of large-scale 2D logic circuits. Our results underscore the unique properties of 2D semiconducting materials with low crystal symmetry for future electronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Raman vibrational spectra of bulk to monolayer ReS2 with lower symmetry

Lattice structure and symmetry of two-dimensional (2D) layered materials are of key importance to their fundamental mechanical, thermal, electronic and optical properties. Raman spectroscopy, as a convenient and nondestructive tool, however has its limitations on identifying all symmetry allowing Raman modes and determining the corresponding crystal structure of 2D layered materials with high symmetry like graphene and MoS2. Due to lower structural symmetry and extraordinary weak interlayer coupling of ReS2, we successfully identified all 18 first-order Raman active modes for bulk and monolayer ReS2. Without van der Waals (vdW) correction, our local density approximation (LDA) calculations successfully reproduce all the Raman modes. Our calculations also suggest no surface reconstruction effect and the absence of low frequency rigid-layer Raman modes below 100 cm-1. Combining with Raman and LDA thus provides a general approach for studying the vibrational and structural properties of 2D layered materials with lower symmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

The positive piezoconductive effect in graphene

As the thinnest conductive and elastic material, graphene is expected to play a crucial role in post-Moore era. Besides applications on electronic devices, graphene has shown great potential for nano-electromechanical systems. While interlayer interactions play a key role in modifying the electronic structures of layered materials, no attention has been given to their impact on electromechanical properties. Here we report the positive piezoconductive effect observed in suspended bi- and multi-layer graphene. The effect is highly layer number dependent and shows the most pronounced response for tri-layer graphene. The effect, and its dependence on the layer number, can be understood as resulting from the strain-induced competition between interlayer coupling and intralayer transport, as confirmed by the numerical calculations based on the non-equilibrium Green's function method. Our results enrich the understanding of graphene and point to layer number as a powerful tool for tuning the electromechanical properties of graphene for future applications.

0 citations0 reviewsNo code linkedOpen access