Source author record

Enze Zhang

Enze Zhang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

8works
7topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

8 published item(s)

preprint2026arXiv

Visualizing the Invisible: Generative Visual Grounding Empowers Universal EEG Understanding in MLLMs

Leveraging the universal representations of pre-trained LLMs and MLLMs offers a promising path toward brain foundation models. However, visually-evoked EEG datasets remain scarce, leading existing methods to align neural signals mainly with abstract text, a lossy translation that may discard fine-grained perceptual information encoded in brain activity. We propose Generative Visual Grounding (GVG), a framework that visualizes the invisible by using an EEG-to-image generative model as a visual translator. Instead of forcing EEG into text alone, GVG hallucinates instance-specific proxy images for non-visual EEG, providing structured visual contexts that allow MLLMs to exploit their visual priors for clinical-state interpretation. We validate this idea on two MLLM backbones, GVG-X-Omni and GVG-Janus. Image-only alignment is already competitive: the lightweight GVG-X-Omni matches 1.7B-parameter text-aligned baselines while tuning only 170M parameters on a frozen 7B backbone. We further extend GVG-Janus with trimodal Image+Text alignment, where text supplies categorical semantic anchors and visual proxies enrich neural representations with perceptual details. Experiments show consistent gains in EEG understanding and visual generation, suggesting visual proxy grounding as an effective complement to textual alignment.

preprint2022arXiv

A Search for Low-mass Dark Matter via Bremsstrahlung Radiation and the Migdal Effect in SuperCDMS

In this paper, we present a re-analysis of SuperCDMS data using a profile likelihood approach to search for sub-GeV dark matter particles (DM) through two inelastic scattering channels: bremsstrahlung radiation and the Migdal effect. By considering possible inelastic scattering channels, experimental sensitivity can be extended to DM masses that would otherwise be undetectable through the DM-nucleon elastic scattering channel, given the energy threshold of current experiments. We exclude DM masses down to $220~\textrm{MeV}/c^2$ at $2.7 \times 10^{-30}~\textrm{cm}^2$ via the bremsstrahlung channel. The Migdal channel search excludes DM masses down to $30~\textrm{MeV}/c^2$ at $5.0 \times 10^{-30}~\textrm{cm}^2$.

preprint2022arXiv

All-electrical switching of a topological non-collinear antiferromagnet at room temperature

Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions, have attracted extensive interests. However, the all-electrical control of such systems at room temperature, a crucial step toward practical applications, has not been reported. Here using a small writing current of around 5*10^{6} A/cm^{2}, we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet Mn3Sn with a strong readout signal at room temperature in the Si/SiO2/Mn3Sn/AlOx structure, without external magnetic field and injected spin current. Our simulations reveal that the switching is originated from the current-induced intrinsic non-collinear spin-orbit torques in Mn3Sn itself. Our findings pave the way for the development of topological antiferromagnetic spintronics.

preprint2021arXiv

Van der Waals Ferromagnetic Josephson Junctions

Superconductor-ferromagnet (S-F) interfaces in two-dimensional (2D) heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetism. The realization of such nanoscale heterostructures in van der Waals (vdW) crystals remains largely unexplored due to the challenge of making an atomically-sharp interface from their layered structures. Here, we build a vdW ferromagnetic Josephson junction (JJ) by inserting a few-layer ferromagnetic insulator Cr2Ge2Te6 into two layers of superconductor NbSe2. Owing to the remanent magnetic moment of the barrier, the critical current and the corresponding junction resistance exhibit a hysteretic and oscillatory behavior against in-plane magnetic fields, manifesting itself as a strong Josephson coupling state. Through the control of this hysteresis, we can effectively trace the magnetic properties of atomic Cr2Ge2Te6 in response to the external magnetic field. Also, we observe a central minimum of critical current in some thick JJ devices, evidencing the coexistence of 0 and π phase coupling in the junction region. Our study paves the way to exploring the sensitive probes of weak magnetism and multifunctional building blocks for phase-related superconducting circuits with the use of vdW heterostructures.

preprint2020arXiv

Edge superconductivity in Multilayer WTe2 Josephson junction

WTe2, as a type-II Weyl semimetal, has 2D Fermi arcs on the (001) surface in the bulk and 1D helical edge states in its monolayer. These features have recently attracted wide attention in condensed matter physics. However, in the intermediate regime between the bulk and monolayer, the edge states have not been resolved owing to its closed band gap which makes the bulk states dominant. Here, we report the signatures of the edge superconductivity by superconducting quantum interference measurements in multilayer WTe2 Josephson junctions and we directly map the localized supercurrent. In thick WTe2 (~60 nm), the supercurrent is uniformly distributed by bulk states with symmetric Josephson effect ($\left|I_c^+(B)\right|=\left|I_c^-(B)\right|$). In thin WTe2 (10 nm), however, the supercurrent becomes confined to the edge and its width reaches up to 1.4 um and exhibits non-symmetric behavior $\left|I_c^+(B)\right|\neq \left|I_c^-(B)\right|$. The ability to tune the edge domination by changing thickness and the edge superconductivity establishes WTe2 as a promising topological system with exotic quantum phases and a rich physics.

preprint2015arXiv

Magnetotransport properties of Cd3As2 nanostructures

Three-dimensional (3D) topological Dirac semimetal is a new kind of material that has a linear energy dispersion in 3D momentum space and can be viewed as an analog of graphene. Extensive efforts have been devoted to the understanding of bulk materials, but yet it remains a challenge to explore the intriguing physics in low-dimensional Dirac semimetals. Here, we report on the synthesis of Cd3As2 nanowires and nanobelts and a systematic investigation of their magnetotransport properties. Temperature-dependent ambipolar behavior is evidently demonstrated, suggesting the presence of finite-size of bandgap in nanowires. Cd3As2 nanobelts, however, exhibit metallic characteristics with a high carrier mobility exceeding 32,000 cm2V-1s-1 and pronounced anomalous double-period Shubnikov-de Haas (SdH) oscillations. Unlike the bulk counterpart, the Cd3As2 nanobelts reveal the possibility of unusual change of the Fermi sphere owing to the suppression of the dimensionality. More importantly, their SdH oscillations can be effectively tuned by the gate voltage. The successful synthesis of Cd3As2 nanostructures and their rich physics open up exciting nanoelectronic applications of 3D Dirac semimetals.

preprint2015arXiv

Scalable Growth of High Mobility Dirac Semimetal Cd3As2 Microbelts

Three dimensional (3D) Dirac semimetals are 3D analogue of graphene, which display Dirac points with linear dispersion in k-space, stabilized by crystal symmetry. Cd3As2 and Na3Bi were predicted to be 3D Dirac semimetals and were subsequently demonstrated by photoemission experiments. As unveiled by transport measurements, several exotic phases, such as Weyl semimetals, topological insulators, and topological superconductors, can be deduced by breaking time reversal or inversion symmetry. Here, we reported a facile and scalable chemical vapor deposition method to fabricate high-quality Dirac semimetal Cd3As2 microbelts, they have shown ultrahigh mobility up to 1.15*10^5 cm^2/V s and pronounced Shubnikov-de Haas oscillations. Such extraordinary features are attributed to the suppression of electron backscattering. This research opens a new avenue for the scalable fabrication of Cd3As2 materials towards exciting electronic applications of 3D Dirac semimetals.

preprint2014arXiv

Tunable charge-trap memory based on few-layer MoS2

Charge-trap memory with high-\k dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention because of their novel physical properties and potential applications in electronic devices. Here, we report on a dual-gate charge-trap memory device composed of a few-layer MoS2 channel and a three-dimensional (3D) Al2O3/HfO2/Al2O3 charge-trap gate stack. Owing to the extraordinary trapping ability of both electrons and holes in HfO2, the MoS2 memory device exhibits an unprecedented memory window exceeding 20 V. More importantly, with a back gate the window size can be effectively tuned from 15.6 to 21 V; the program/erase current ratio can reach up to 104, far beyond Si-based flash memory, which allows for multi-bit information storage. Furthermore, the device shows a high mobility of 170 cm2V-1s-1, a good endurance of hundreds of cycles and a stable retention of ~28% charge loss after 10 years which is drastically lower than ever reported MoS2 flash memory. The combination of 2D materials with traditional high-\k charge-trap gate stacks opens up an exciting field of novel nonvolatile memory devices.