Researcher profile

Emanuel Knehr

Emanuel Knehr contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

Towards High-Efficiency Particle Detection Using Superconducting Microwire Arrays

We present a detailed study of an 8-channel $1\times1$ mm$^{2}$ WSi superconducting microwire single photon detector (SMSPD) array exposed to 120 GeV hadron beam and 120 GeV muon beam at the CERN Super Proton Synchrotron H6 beamline. Following up on our first detailed characterization of the efficiency and response of an SMSPD fabricated on a 3 nm WSi film, we report measurements of enhanced particle detection efficiency using a sensor fabricated from a thicker 4.7nm-thick WSi film. We also report the first SMSPD detection efficiency measurement made for muons. Measurements are enabled by a silicon tracking telescope providing 10 $μ$m in-situ spatial resolution. The results show a fill factor-normalized detection efficiency of 75% and a time resolution of about 130 ps across pixels. These findings represent a significant advancement toward developing high-efficiency SMSPD charged particle tracking systems with simultaneous precision timing, with potential applications in future accelerator-based experiments such as the FCC-ee and Muon Collider.

preprint2019arXiv

Nanowire single-photon detectors made of atomic layer-deposited niobium nitride

We demonstrate and characterize first superconducting nanowire single-photon detectors (SNSPDs) made from atomic layer-deposited (ALD) NbN layers. To assess the suitability of these films as a detector material, transport properties of bare films and bridges of different dimensions and thicknesses are investigated. Similar ratios of the measured critical current to the depairing current are obtained for micro-bridges made from ALD and sputtered NbN films. Furthermore, we characterized the single-photon response for 5 and 10 nm-thick nanowire detectors. A 100 nm-wide straight nanowire with a length of 5 $μ$m exhibits saturated count-rate dependencies on bias current and a cut-off wavelength in the near-infrared range. The ALD technique could open up the possibility to fabricate NbN-based detectors on the wafer scale and to conformally cover also non-planar surfaces for novel device concepts.