Source author record

Elke Scheer

Elke Scheer appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con physics.app-ph physics.class-ph

Catalog footprint

What is connected

5works

5topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2026arXiv

Van der Waals superconducting electronics: materials, devices and circuit integration

Van der Waals (vdW) superconductors - atomically thin crystalline materials that can be stacked into more complex heterostructures - have opened a promising avenue for superconducting electronics thanks to their properties that are otherwise difficult to obtain in other superconducting materials. These include strong resilience to high in-plane fields, electrostatic tuneability, and non-reciprocal transport rooted in inversion-symmetry breaking and strong spin-orbit coupling. In addition to highlighting the importance of these properties for superconducting electronics, this review gives an overview over the physical mechanisms that govern and influence superconductivity in vdW materials including Ising pairing, band inversion, and proximity effects at superconductor/ferromagnet interfaces that do not have an equivalent in thin-film systems. This overview then sets the basis to survey the wide range of functionalities enabled by superconducting vdW devices including gate-controlled devices, superconducting diodes, and circuit elements for readout and control of quantum bits. The review concludes with a forward look at wafer-scale growth and deterministic assembly of vdW devices, highlighting concrete pathways that can enable the transition from vdW device prototypes to deployable components for cryogenic electronics and quantum technologies.

preprint2021arXiv

Mechanically Modulated Sideband and Squeezing Effects of Membrane Resonators

We investigate the sideband spectra of a driven nonlinear mode with its eigenfrequency being modulated at a low frequency (< 1 kHz). This additional parametric modulation leads to prominent antiresonance lineshapes in the sideband spectra, which can be controlled through the vibration state of the driven mode. We also establish a direct connection between the antiresonance frequency and the squeezing of thermal fluctuation in the system. Our work not only provides a simple and robust method for squeezing characterization but also opens a new possibility toward sideband applications.

preprint2015arXiv

Force-noise spectroscopy by tunnelling current deflection sensing

An electro-mechanical setup for the measurement of AC-forces in a low-temperature tunnelling microscope has been developed, which enables extremely high force resolution. The crosstalk of vibrations onto the tunnelling current is used to measure the deflection of a force-sensing cantilever beam. We demonstrate its capability to measure the noise of the force at a tunnelling contact using polycrystalline Iridium. Depending on temperature, spring constant and current, a resolution in the range of $\rm {fN}/\sqrt{\rm Hz}$ is possible. We observe peak levels of the force-noise at the energy of the expected phonon maximal density of states, which suggests that inelastic transport processes contribute to force fluctuations.

preprint2013arXiv

Influence of vibrations on electron transport through nanoscale contacts

In this article we present a novel semi-analytical approach to calculate first-order electron-vibration coupling constants within the framework of density functional theory. It combines analytical expressions for the first-order derivative of the Kohn-Sham operator with respect to nuclear displacements with coupled-perturbed Kohn-Sham theory to determine the derivative of the electronic density matrix. This allows us to efficiently compute accurate electron-vibration coupling constants. We apply our approach to describe inelastic electron tunneling spectra of metallic and molecular junctions. A gold junction bridged by an atomic chain is used to validate the developed method, reproducing established experimental and theoretical results. For octane-dithiol and octane-diamine single-molecule junctions we discuss the influence of the anchoring group and mechanical stretching on the inelastic electron tunneling spectra.

preprint2010arXiv

Mechanical control of vibrational states in single-molecule junctions

We report on inelastic electron tunneling spectroscopy measurements carried out on single molecules incorporated into a mechanically controllable break-junction of Au and Pt electrodes at low temperature. Here we establish a correlation between the molecular conformation and conduction properties of a single-molecule junction. We demonstrate that the conductance through single molecules crucially depends on the contact material and configuration by virtue of their mechanical and electrical properties. Our findings prove that the charge transport via single molecules can be manipulated by varying both the molecular conformation (e.g., trans or gauche) and the contact material.