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Angelo Di Bernardo

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Published work

5 published item(s)

preprint2026arXiv

Van der Waals superconducting electronics: materials, devices and circuit integration

Van der Waals (vdW) superconductors - atomically thin crystalline materials that can be stacked into more complex heterostructures - have opened a promising avenue for superconducting electronics thanks to their properties that are otherwise difficult to obtain in other superconducting materials. These include strong resilience to high in-plane fields, electrostatic tuneability, and non-reciprocal transport rooted in inversion-symmetry breaking and strong spin-orbit coupling. In addition to highlighting the importance of these properties for superconducting electronics, this review gives an overview over the physical mechanisms that govern and influence superconductivity in vdW materials including Ising pairing, band inversion, and proximity effects at superconductor/ferromagnet interfaces that do not have an equivalent in thin-film systems. This overview then sets the basis to survey the wide range of functionalities enabled by superconducting vdW devices including gate-controlled devices, superconducting diodes, and circuit elements for readout and control of quantum bits. The review concludes with a forward look at wafer-scale growth and deterministic assembly of vdW devices, highlighting concrete pathways that can enable the transition from vdW device prototypes to deployable components for cryogenic electronics and quantum technologies.

preprint2022arXiv

Nodal superconducting exchange coupling

The superconducting equivalent of giant magnetoresistance, involves placing a thin-film superconductor between two ferromagnetic layers. A change of magnetization-alignment in such a superconducting spin-valve from parallel (P) to antiparallel (AP) creates a positive shift in the superconducting transition temperature (ΔTc) due to an interplay of the magnetic exchange energy and the superconducting condensate. The magnitude of ΔTc scales inversely with the superconductor thickness (dS) and is zero when dS exceeds the superconducting coherence length (ξ) as predicted by de Gennes. Here, we report a superconducting spin-valve effect involving a different underlying mechanism that goes beyond de Gennes in which magnetization-alignment and ΔTc are determined by the nodal quasiparticle-excitation states on the Fermi surface of the d-wave superconductor YBa2Cu3O7-δ (YBCO) grown between insulating layers of ferromagnetic Pr0.8Ca0.2MnO3. We observe ΔTc values that approach 2 K with ΔTc oscillating with dS over a length scale exceeding 100 ξ and, for particular values of dS, we find that the superconducting state reinforces an antiparallel magnetization-alignment. These results pave the way for all-oxide superconducting memory in which superconductivity modulates the magnetic state.

preprint2016arXiv

Electric control of superconducting transition through a spin-orbit coupled interface

We demonstrate theoretically all-electric control of the superconducting transition temperature using a device comprised of a conventional superconductor, a ferromagnetic insulator, and semiconducting layers with intrinsic spin-orbit coupling. By using analytical calculations and numerical simulations, we show that the transition temperature of such a device can be controlled by electric gating which alters the ratio of Rashba to Dresselhaus spin-orbit coupling. The results offer a new pathway to control superconductivity in spintronic devices.

preprint2016arXiv

Intrinsic Paramagnetic Meissner Effect due to s-wave Odd-Frequency Superconductivity

In 1933, Meissner and Ochsenfeld reported the expulsion of magnetic flux, the diamagnetic Meissner effect, from the interior of superconducting lead. This discovery was crucial in formulating the Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity. In exotic superconducting systems BCS theory does not strictly apply. A classical example is a superconductor-magnet hybrid system where magnetic ordering breaks time-reversal symmetry of the superconducting condensate and results in the stabilisation of an odd-frequency superconducting state. It has been predicted that under appropriate conditions, odd-frequency superconductivity should manifest in the Meissner state as fluctuations in the sign of the magnetic susceptibility meaning that the superconductivity can either repel (diamagnetic) or attract (paramagnetic) external magnetic flux. Here we report local probe measurements of faint magnetic fields in a Au/Ho/Nb trilayer system using low energy muons, where antiferromagnetic Ho (4.5 nm) breaks time-reversal symmetry of the proximity induced pair correlations in Au. From depth-resolved measurements below the superconducting transition of Nb we observe a local enhancement of the magnetic field in Au that exceeds the externally applied field, thus proving the existence of an intrinsic paramagnetic Meissner effect arising from an odd-frequency superconducting state.

preprint2015arXiv

Inverse proximity effect at superconductor-ferromagnet interfaces: Evidence for induced triplet pairing in the superconductor

Considerable evidence for proximity-induced triplet superconductivity on the ferromagnetic side of a superconductor-ferromagnet (S-F) interface now exists; however, the corresponding effect on the superconductor side has hardly been addressed. We have performed scanning tunneling spectroscopy measurements on NbN superconducting thin films proximity coupled to the half-metallic ferromagnet La2/3Ca1/3MnO3 (LCMO) as a function of magnetic field. We have found that at zero and low applied magnetic fields the tunneling spectra on NbN typically show an anomalous gap structure with suppressed coherence peaks and, in some cases, a zero-bias conductance peak. As the field increases to the magnetic saturation of LCMO where the magnetization is homogeneous, the spectra become more BCS-like and the critical temperature of the NbN increases, implying a reduced proximity effect. Our results therefore suggest that triplet-pairing correlations are also induced in the S side of an S-F bilayer.