Researcher profile

Elizabeth A. Nowadnick

Elizabeth A. Nowadnick contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Manipulation of spin orientation via ferroelectric switching in Fe-doped Bi2WO6 from first principles

Atomic-scale control of spins by electric fields is highly desirable for future technological applications. Magnetically-doped Aurivillius-phase oxides present one route to achieve this, with magnetic ions substituted into the ferroelectric structure at dilute concentrations, resulting in spin-charge coupling. However, there has been minimal exploration of the ferroelectric switching pathways in this materials class, limiting predictions of the influence of an electric field on the magnetic spins in the structure. Here, we determine the ferroelectric switching pathways of the end member of the Aurivilius phase family, Bi2WO6, using a combination of group theoretic analysis and density functional theory calculations. We find that in the ground state P21ab phase, a two-step switching pathway via C2 and Cm intermediate phases provides the lowest energy barrier. Considering iron substitutions on the W-site in Bi2WO6, we determine the spin easy axis. By tracking the change in spin directionality during ferroelectric switching, we find that a 90 degree switch in the polarization direction leads to a 112 degree reorientation of the spin easy axis. The low symmetry crystal-field environment of Bi2WO6 and magnetoelastic coupling on the magnetic dopant provide a route to spin control via and applied electric field.

preprint2020arXiv

Highly tunable ferroelectricity in hybrid improper ferroelectric Sr3Sn2O7

The successful theoretical prediction and experimental demonstration of hybrid improper ferroelectricity (HIF) provides a new pathway to couple octahedral rotations, ferroelectricity, and magnetism in complex materials. To enable technological applications, a HIF with a small coercive field is desirable. We successfully grow Sr3Sn2O7 single crystals, and discover that they exhibit the smallest electric coercive field at room temperature among all known HIFs. Furthermore, we demonstate that a small external stress can repeatedly erase and re-generate ferroelastic domains. In addition, using in-plane piezo-response force microscopy, we characterize abundant charged and neutral domain walls. The observed small electrical and mechanical coercive field values are in accordance with the results of our first-principles calculations on Sr3Sn2O7, which show low energy barriers for both 90° and 180° polarization switching compared to those in other experimentally demonstrated HIFs. Our findings represent an advance towards the possible technological implemetation of functional HIFs.