Researcher profile

Elif Ertekin

Elif Ertekin contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2026arXiv

SLayerGen: a Crystal Generative Model for all Space and Layer Groups

Crystal generative models have shown rapid progress for accelerating the discovery of bulk, periodic materials. However, many material systems such as 2D superconductors, thin film semiconductors, and catalytic surfaces are diperiodic, i.e., aperiodic along one of the lattice directions. These systems are invariant under the layer groups, which are known to influence materials properties yet not considered by existing models. In this paper, we propose SLayerGen, a generative model that produces crystals constrained to be invariant to any space or layer group. SLayerGen consists of coarse-to-fine discrete autoregressive lattice generation; transformer-based autoregressive sampling of Wyckoff positions, elements, and numbers of symmetrically unique atoms; and space or layer group equivariant diffusion of atomic coordinates. For the diffusion component, we corrected an inconsistency in the loss from prior work arising from hexagonal groups being non-orthogonal in fractional coordinates. To facilitate progress in generative modeling of diperiodic materials, we assembled and filtered datasets of monolayers and bilayers, propose relevant evaluation metrics, and developed novel representations for layer group symmetries. For de novo generation of diperiodic materials, SLayerGen achieves consistent performance gains over bulk crystal generative models and is competitive when training jointly on bulk and diperiodic materials.

preprint2022arXiv

Towards overcoming data scarcity in materials science: unifying models and datasets with a mixture of experts framework

While machine learning has emerged in recent years as a useful tool for rapid prediction of materials properties, generating sufficient data to reliably train models without overfitting is still impractical for many applications. Towards overcoming this limitation, we present a general framework for leveraging complementary information across different models and datasets for accurate prediction of data scarce materials properties. Our approach, based on a machine learning paradigm called mixture of experts, outperforms pairwise transfer learning on 16 of 19 materials property regression tasks, performing comparably on the remaining three. Unlike pairwise transfer learning, our framework automatically learns to combine information from multiple source tasks in a single training run, alleviating the need for brute-force experiments to determine which source task to transfer from. The approach also provides an interpretable, model-agnostic, and scalable mechanism to transfer information from an arbitrary number of models and datasets to any downstream property prediction task. We anticipate the performance of our framework will further improve as better model architectures, new pre-training tasks, and larger materials datasets are developed by the community.

preprint2020arXiv

Understanding Cu Incorporation in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ Structure using Resonant X-ray Diffraction

The ability to control carrier concentration based on the extent of Cu solubility in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy compound (where 0 $\leq$ x $\leq$ 1) makes $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ an interesting case study in the field of thermoelectrics. While Cu clearly plays a role in this process, it is unknown exactly how Cu incorporates into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ crystal structure and how this affects the carrier concentration. In this work, we use a combination of resonant energy X-ray diffraction (REXD) experiments and density functional theory (DFT) calculations to elucidate the nature of Cu incorporation into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ structure. REXD across the $\mathrm{Cu_k}$ edge facilitates the characterization of Cu incorporation in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy and enables direct quantification of anti-site defects. We find that Cu substitutes for Hg at a 2:1 ratio, wherein Cu annihilates a vacancy and swaps with a Hg atom. DFT calculations confirm this result and further reveal that the incorporation of Cu occurs preferentially on one of the z = 1/4 or z = 3/4 planes before filling the other plane. Furthermore, the amount of $\mathrm{Cu_{Hg}}$ anti-site defects quantified by REXD was found to be directly proportional to the experimentally measured hole concentration, indicating that the $\mathrm{Cu_{Hg}}$ defects are the driving force for tuning carrier concentration in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy. The link uncovered here between crystal structure, or more specifically anti-site defects, and carrier concentration can be extended to similar cation-disordered material systems and will aid the development of improved thermoelectric and other functional materials through defect engineering.