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Elif Ertekin

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Published work

10 published item(s)

preprint2026arXiv

SLayerGen: a Crystal Generative Model for all Space and Layer Groups

Crystal generative models have shown rapid progress for accelerating the discovery of bulk, periodic materials. However, many material systems such as 2D superconductors, thin film semiconductors, and catalytic surfaces are diperiodic, i.e., aperiodic along one of the lattice directions. These systems are invariant under the layer groups, which are known to influence materials properties yet not considered by existing models. In this paper, we propose SLayerGen, a generative model that produces crystals constrained to be invariant to any space or layer group. SLayerGen consists of coarse-to-fine discrete autoregressive lattice generation; transformer-based autoregressive sampling of Wyckoff positions, elements, and numbers of symmetrically unique atoms; and space or layer group equivariant diffusion of atomic coordinates. For the diffusion component, we corrected an inconsistency in the loss from prior work arising from hexagonal groups being non-orthogonal in fractional coordinates. To facilitate progress in generative modeling of diperiodic materials, we assembled and filtered datasets of monolayers and bilayers, propose relevant evaluation metrics, and developed novel representations for layer group symmetries. For de novo generation of diperiodic materials, SLayerGen achieves consistent performance gains over bulk crystal generative models and is competitive when training jointly on bulk and diperiodic materials.

preprint2022arXiv

Towards overcoming data scarcity in materials science: unifying models and datasets with a mixture of experts framework

While machine learning has emerged in recent years as a useful tool for rapid prediction of materials properties, generating sufficient data to reliably train models without overfitting is still impractical for many applications. Towards overcoming this limitation, we present a general framework for leveraging complementary information across different models and datasets for accurate prediction of data scarce materials properties. Our approach, based on a machine learning paradigm called mixture of experts, outperforms pairwise transfer learning on 16 of 19 materials property regression tasks, performing comparably on the remaining three. Unlike pairwise transfer learning, our framework automatically learns to combine information from multiple source tasks in a single training run, alleviating the need for brute-force experiments to determine which source task to transfer from. The approach also provides an interpretable, model-agnostic, and scalable mechanism to transfer information from an arbitrary number of models and datasets to any downstream property prediction task. We anticipate the performance of our framework will further improve as better model architectures, new pre-training tasks, and larger materials datasets are developed by the community.

preprint2020arXiv

Understanding Cu Incorporation in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ Structure using Resonant X-ray Diffraction

The ability to control carrier concentration based on the extent of Cu solubility in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy compound (where 0 $\leq$ x $\leq$ 1) makes $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ an interesting case study in the field of thermoelectrics. While Cu clearly plays a role in this process, it is unknown exactly how Cu incorporates into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ crystal structure and how this affects the carrier concentration. In this work, we use a combination of resonant energy X-ray diffraction (REXD) experiments and density functional theory (DFT) calculations to elucidate the nature of Cu incorporation into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ structure. REXD across the $\mathrm{Cu_k}$ edge facilitates the characterization of Cu incorporation in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy and enables direct quantification of anti-site defects. We find that Cu substitutes for Hg at a 2:1 ratio, wherein Cu annihilates a vacancy and swaps with a Hg atom. DFT calculations confirm this result and further reveal that the incorporation of Cu occurs preferentially on one of the z = 1/4 or z = 3/4 planes before filling the other plane. Furthermore, the amount of $\mathrm{Cu_{Hg}}$ anti-site defects quantified by REXD was found to be directly proportional to the experimentally measured hole concentration, indicating that the $\mathrm{Cu_{Hg}}$ defects are the driving force for tuning carrier concentration in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy. The link uncovered here between crystal structure, or more specifically anti-site defects, and carrier concentration can be extended to similar cation-disordered material systems and will aid the development of improved thermoelectric and other functional materials through defect engineering.

preprint2016arXiv

A generalized Debye-Peierls/Allen-Feldman model for the lattice thermal conductivity of low dimensional and disordered materials

We present a generalized model to describe the lattice thermal conductivity of low-dimensional (low-D) and disordered systems. The model is a straightforward generalization of the Debye-Peierls and Allen-Feldman schemes to arbitrary dimensions, accounting for low-D effects such as differences in dispersion, density of states, and scattering. Similar in spirit to the Allen-Feldman approach, heat carriers are categorized according to their transporting capacity as propagons, diffusons, and locons. The results of the generalized model are compared to experimental results when available, and equilibrium molecular dynamics simulations otherwise. The results are in very good agreement with our analysis of phonon localization in disordered low-D systems, such as amorphous graphene and glassy diamond nanothreads. Several unique aspects of thermal transport in low-D and disordered systems, such as milder suppression of thermal conductivity and negligble diffuson contributions, are captured by the approach.

preprint2016arXiv

Screened-exchange density functional theory description of the electronic structure and phase stability of the chalcopyrite materials AgInSe$_2$ and AuInSe$_2$

We present a systematic assessment of the structural properties, the electronic density of states, the charge densities, and the phase stabilities of AgInSe$_2$ and AuInSe$_2$ using screened exchange hybrid density functional theory, and compare their properties to those of CuInSe$_2$. For AgInSe$_2$, hybrid density functional theory properly captures several experimentally measured properties, including the increase in the band gap and the change in the direction of the lattice distortion parameter $u$ in comparison to CuInSe$_2$. While the electronic properties of AuInSe$_2$ have not yet been experimentally characterized, we predict it to be a small gap ($\approx 0.15$ eV) semiconductor. We also present the phase stability of AgInSe$_2$ and AuInSe$_2$ according to screened-exchange density functional theory, and compare the results to predictions from conventional density functional theory, results tabulated from several online materials data repositories, and experiment (when available). In comparison to conventional density functional theory, the hybrid functional predicts phase stabilities of AgInSe$_2$ in better agreement with experiment: discrepancies in the calculated formation enthalpies are reduced by approximately a factor of three, from $\approx$ 0.20 eV/atom to $\approx$ 0.07 eV/atom, similar to the improvement observed for CuInSe$_2$. We further predict that AuInSe$_2$ is not a stable phase, and can only be present under non-equilibrium conditions.

preprint2015arXiv

Lattice mismatch induced ripples and wrinkles in planar graphene/boron nitride superlattices

A continuum theory to describe periodic ripple formation in planar graphene/boron nitride superlattices is formulated. Due to the lattice mismatch between the two materials, it is shown that flat superlattices are unstable with respect to ripple formation of appropriate wavelengths. A competition between bending energy and transverse stretching energy gives rise to an optimal ripple wavelength that depends on the superlattice pitch. The optimal wavelengths predicted by the continuum theory are in good agreement with atomic scale total energy calculations previously reported in Nandwana and Ertekin, Nano Lett. 15 1468 (2015).

preprint2015arXiv

Phase Stability and Properties of Manganese Oxide Polymorphs: Assessment and Insights from Diffusion Monte Carlo

We present an analysis of the polymorphic energy ordering and properties of the rock salt and zincblende structures of manganese oxide using fixed node diffusion Monte Carlo (DMC). Manganese oxide is a correlated, antiferromagnetic material that has proven to be challenging to model from first principles across a variety of approaches. Unlike conventional density functional theory and some hybrid functionals, fixed node diffusion Monte Carlo finds the rock salt structure to be more stable than the zincblende structure, and thus recovers the correct energy ordering. Analysis of the site-resolved charge fluctuations of the wave functions according to DMC and other electronic structure descriptions give insights into elements that are missing in other theories. While the calculated band gaps within DMC are in agreement with predictions that the zincblende polymorph has a lower band gap, the gaps themselves overestimate reported experimental values.

preprint2015arXiv

Towards a systematic assessment of errors in diffusion Monte Carlo calculations of semiconductors: case study of zinc selenide and zinc oxide

The fixed node diffusion Monte Carlo (DMC) method has attracted interest in recent years as a way to calculate properties of solid materials with high accuracy. However, the framework for the calculation of properties such as total energies, atomization energies, and excited state energies is not yet fully established. Several outstanding questions remain as to the effect of pseudopotentials, the magnitude of the fixed node error, and the size of supercell finite size effects. Here, we consider in detail the semiconductors ZnSe and ZnO and carry out systematic studies to assess the magnitude of the energy differences arising from controlled and uncontrolled approximations in DMC. The former include time step errors and supercell finite size effects for ground and optically excited states, and the latter include pseudopotentials, the pseudopotential localization approximation, and the fixed node approximation. We find that for these compounds, the errors can be controlled to good precision using modern computational resources, and that quantum Monte Carlo calculations using Dirac-Fock pseudopotentials can offer good estimates of both cohesive energy and the gap of these systems. We do however observe differences in calculated optical gaps that arise when different pseudopotentials are used.

preprint2012arXiv

Point-Defect Optical Transitions and Thermal Ionization Energies from Quantum Monte Carlo Methods: Application to F-center Defect in MgO

We present an approach to calculation of point defect optical and thermal ionization energies based on the highly accurate quantum Monte Carlo methods. The use of an inherently many-body theory that directly treats electron correlation offers many improvements over the typically-employed density functional theory Kohn-Sham description. In particular, the use of quantum Monte Carlo methods can help overcome the band gap problem and obviate the need for ad-hoc corrections. We demonstrate our approach to the calculation of the optical and thermal ionization energies of the F-center defect in magnesium oxide, and obtain excellent agreement with experimental and/or other high-accuracy computational results.

preprint2011arXiv

Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin

Hyperdoping has emerged as a promising method for designing semiconductors with unique optical and electronic properties, although such properties currently lack a clear microscopic explanation. Combining computational and experimental evidence, we probe the origin of sub-band gap optical absorption and metallicity in Se-hyperdoped Si. We show that sub-band gap absorption arises from direct defect-to-conduction band transitions rather than free carrier absorption. Density functional theory predicts the Se-induced insulator-to-metal transition arises from merging of defect and conduction bands, at a concentration in excellent agreement with experiment. Quantum Monte Carlo calculations confirm the critical concentration, demonstrate that correlation is important to describing the transition accurately, and suggest that it is a classic impurity-driven Mott transition.