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Elena D. Obraztsova

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Published work

3 published item(s)

preprint2020arXiv

Coulomb blockade in field electron emission from carbon nanotubes

We report the observation of Coulomb blockade in field electron emission (FE) from single-wall carbon nanotubes (SWCNTs), which is manifested as pronounced steps in the FE current-voltage curves and oscillatory variations in the energy distribution of emitted electrons. The appearance of the Coulomb blockade is explained by the formation of nanoscale protrusions at the apexes of SWCNTs due to the electric field-assisted surface diffusion of adsorbates and carbon adatoms. The proposed adsorbate-assisted FE mechanism is substantially different from the well-known resonant tunneling associated with discrete electronic states of adsorbed atoms. The simulations based on the Coulomb blockade theory are in excellent agreement with the experimental results. The SWCNT field emitters controlled by the Coulomb blockade effect are expected to be used to develop on-demand coherent single-electron sources for advanced vacuum nanoelectronic devices.

preprint2013arXiv

Single-shot and single-spot measurement of laser ablation threshold for carbon nanotubes

A simple and convenient procedure for single-shot, single-spot ablation threshold measurement has been developed. It is based on the employment of cylindrical lens to obtain elliptical Gaussian laser spot. The ablated spot chords which are parallel to the minor axis were measured across the spot major axis which is proportional to the fluence cross-section thus providing wide range dependence of damaged spot size versus fluence in one spot measurement. For both conventional and new-developed procedures the ablation threshold for typical Nd:YAG laser parameters (1064 nm, 10 ns) has been measured as 50 mJ/cm2 which is one order of magnitude lower than that for a bulk graphite.

preprint2012arXiv

Second harmonic generation in multilayer graphene induced by direct electric current

Optical second harmonic generation (SHG) is studied from multilayer graphene films in the presence of DC electric current flowing in the sample plane. Graphene layers are manufactured by chemical vapour deposition (CVD) technique and deposited on an oxidised Si(001) substrate. SHG intensity from graphene layer is found to be negligible in the absence of the DC current, while it increases dramatically with the application of the electric current. The current-induced change of the SHG intensity rises linearly with the current amplitude and changes its sign under the reversal of the current direction to the opposite. The observed effect is explained in terms of the interference of second harmonic radiation reflected from the Si surface and that induced by the DC current in multilayer graphene.