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Eisuke Magome

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Published work

2 published item(s)

preprint2015arXiv

In-plane chemical pressure essential for superconductivity in BiCh2-based (Ch: S, Se) layered structure

BiCh2-based superconductors (Ch: S, Se) are a new series of layered superconductor. However, mechanisms for the emergence of superconductivity in BiCh2-based superconductors have not been clarified. In this study, we have investigated crystal structure of two series of optimally-doped BiCh2-based superconductors, Ce1-xNdxO0.5F0.5BiS2 and LaO0.5F0.5Bi(S1-ySey)2, using powder synchrotron x-ray diffraction in order to reveal the relationship between crystal structure and superconducting properties of the BiCh2-based family. We have found that an enhancement of in-plane chemical pressure would commonly induce bulk superconductivity in both systems. Furthermore, we have revealed that superconducting transition temperature for REO0.5F0.5BiCh2 superconductors could universally be determined by degree of in-plane chemical pressure.

preprint2015arXiv

Structures and Optical Absorption of Bi2OS2 and LaOBiS2

The band gaps of isostructural Bi2OS2 and LaOBiS2 were examined using optical absorption and discussed with the band structures calculated based on the crystal structures determined using synchrotron X-ray diffraction. The Bi 6p and S 3p orbitals in the Bi-S plane were computationally predicted to constitute the bands near the Fermi level. The optical reflectance spectra of Bi2OS2 and LaOBiS2 showed optical band gaps of ca. 1.0 eV, which were close to the computationally calculated direct band gaps of ca. 0.8 eV. Our results show that Bi2OS2 and LaOBiS2 are semiconductors containing direct band gaps of 0.8-1.0 eV, and they are suggested to be candidates for optoelectronic materials in the near-infrared region without highly toxic elements.