Researcher profile

E. Y. Andrei

E. Y. Andrei contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 17 - UnverifiedVerification L1Unclaimed author
4works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2010arXiv

Single Layer Behavior and Its Breakdown in Twisted Graphene Layers

We report high magnetic field scanning tunneling microscopy and Landau level spectroscopy of twisted graphene layers grown by chemical vapor deposition. For twist angles exceeding ~3 degrees the low energy carriers exhibit Landau level spectra characteristic of massless Dirac fermions. Above 20 degrees the layers effectively decouple and the electronic properties are indistinguishable from those in single layer graphene, while for smaller angles we observe a slow-down of the carrier velocity which is strongly angle dependent. At the smallest angles the spectra are dominated by twist induced Van Hove singularities and the Dirac fermions eventually become localized. An unexpected electron-hole asymmetry is observed which is substantially larger than the asymmetry in either single or untwisted bilayer graphene.

preprint2009arXiv

Fractional Quantum Hall Effect in Suspended Graphene: Transport Coefficients and Electron Interaction Strength

Strongly correlated electron liquids which occur in quantizing magnetic fields reveal a cornucopia of fascinating quantum phenomena such as fractionally charged quasiparticles, anyonic statistics, topological order, and many others. Probing these effects in GaAs-based systems, where electron interactions are relatively weak, requires sub-kelvin temperatures and record-high electron mobilities, rendering some of the most interesting states too fragile and difficult to access. This prompted a quest for new high-mobility systems with stronger electron interactions. Recently, fractional-quantized Hall effect was observed in suspended graphene (SG), a free-standing monolayer of carbon, where it was found to persist up to T=10 K. The best results in those experiments were obtained on micron-size flakes, on which only two-terminal transport measurements could be performed. Here we pose and solve the problem of extracting transport coefficients of a fractional quantum Hall state from the two-terminal conductance. We develop a method, based on the conformal invariance of two-dimensional magnetotransport, and illustrate its use by analyzing the measurements on SG. From the temperature dependence of longitudinal conductivity, extracted from the measured two-terminal conductance, we estimate the energy gap of quasiparticle excitations in the fractional-quantized nu=1/3 state. The gap is found to be significantly larger than in GaAs-based structures, signaling much stronger electron interactions in suspended graphene. Our approach provides a new tool for the studies of quantum transport in suspended graphene and other nanoscale systems.

preprint2009arXiv

Integer and Fractional Quantum Hall Effect in Two-Terminal Measurements on Suspended Graphene

We report the observation of the quantized Hall effect in suspended graphene probed with a two-terminal lead geometry. The failure of earlier Hall-bar measurements is discussed and attributed to the placement of voltage probes in mesoscopic samples. New quantized states are found at integer Landau level fillings outside the sequence 2,6,10.., as well as at a fractional filling ν=1/3. Their presence is revealed by plateaus in the two-terminal conductance which appear in magnetic fields as low as 2 Tesla at low temperatures and persist up to 20 Kelvin in 12 Tesla. The excitation gaps, extracted from the data with the help of a theoretical model, are found to be significantly larger than in GaAs based electron systems.

preprint2009arXiv

Observation of Van Hove singularities in twisted graphene layers

Electronic instabilities at the crossing of the Fermi energy with a Van Hove singularity in the density of states often lead to new phases of matter such as superconductivity, magnetism or density waves. However, in most materials this condition is difficult to control. In the case of single-layer graphene, the singularity is too far from the Fermi energy and hence difficult to reach with standard doping and gating techniques. Here we report the observation of low-energy Van Hove singularities in twisted graphene layers seen as two pronounced peaks in the density of states measured by scanning tunneling spectroscopy. We demonstrate that a rotation between stacked graphene layers can generate Van Hove singularities, which can be brought arbitrarily close to the Fermi energy by varying the angle of rotation. This opens intriguing prospects for Van Hove singularity engineering of electronic phases.