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E. Whiteway

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2 publications

preprint2014arXiv

Absence of hyperfine effects in 13^{13}C-graphene spin valve devices

The carbon isotope 13^{13}C, in contrast to 12^{12}C, possesses a nuclear magnetic moment and can induce electron spin dephasing in graphene. This effect is usually neglected due to the low abundance of 13^{13}C in natural carbon allotropes (∼\sim1 %). Chemical vapor deposition (CVD) allows for artificial synthesis of graphene solely from a 13^{13}C precursor, potentially amplifying the influence of the nuclear magnetic moments. In this work we study the effect of hyperfine interactions in pure 13^{13}C-graphene on its spin transport properties. Using Hanle precession measurements we determine the spin relaxation time and observe a weak increase of τsτ_{s} with doping and a weak change of τsτ_{s} with temperature, as in natural graphene. For comparison we study spin transport in pure 12^{12}C-graphene, also synthesized by CVD, and observe similar spin relaxation properties. As the signatures of hyperfine effects can be better resolved in oblique spin-valve and Hanle configurations, we use finite-element modeling to emulate oblique signals in the presence of a hyperfine magnetic field for typical graphene properties. Unlike in the case of GaAs, hyperfine interactions with 13^{13}C nuclei influence electron spin transport only very weakly, even for a fully polarized nuclear system. Also, in the measurements of the oblique spin-valve and Hanle effects no hyperfine features could be resolved. This work experimentally confirms the weak character of hyperfine interactions and the negligible role of 13^{13}C atoms in the spin dephasing processes in graphene.

preprint2012arXiv

Weak Localization in Graphene: Theory, Simulations and Experiments

We provide a comprehensive picture of magnetotransport in graphene monolayers in the limit of non-quantizing magnetic fields. We discuss the effects of two carrier transport, weak localization, weak anti-localization, and strong localization for graphene devices of various mobilities, through theory, experiments and numerical simulations. In particular, we observe the weak localization of the localization length, which allows us to make the connection between weak and strong localization. It provides a unified framework for both localizations, which explains the observed experimental features. We compare these results to numerical simulation and find a remarkable agreement between theory, experiment and numerics. Various graphene devices were used in this study, including graphene on different substrates, such as glass and silicon, as well as low and high mobility devices.

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