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E. T. Owen

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Published work

2 published item(s)

preprint2016arXiv

An optimal single-electron charge qubit for solid-state double quantum dots

We report on an optimal single-electron charge qubit for a solid-state double quantum dot (DQD) system and analyse its dynamics under a time-dependent linear detuning, using GPU accelerated numerical solutions to the time-dependent Schrödinger equation. The optimal qubit is found to have basis states defined as the symmetric and antisymmetric linear combinations of the lowest energy bonding and anti-bonding states of the DQD at zero bias. In contrast to charge qubits defined by the two localised ground states of the uncoupled DQD, this choice of the basis causes the resulting dynamics to have a maximal overlap with an idealised two-state model. Our optimal qubit basis states are not localised to a single quantum dot and, as such, initialising the qubit requires a particular sequence of gate pulses to take the system from an initial fiducial state of the DQD to the logical $0$ or $1$. We determine this sequence using pulses that incorporate the expected experimental finite rise times. We also show how to perform arbitrary single qubit operations on the Bloch sphere using spin-echo type pulsing, allowing us to obtain any qubit state with at most two single pulses. Measurement of the optimal qubits is achieved by determining the probability of finding the electron in one of the dots.

preprint2016arXiv

Ground-state electronic structure of quasi-one-dimensional wires in semiconductor heterostructures

We apply density functional theory, in the local density approximation, to a quasi-one-dimensional electron gas in order to quantify the effect of Coulomb and correlation effects in modulating, and therefore patterning, the charge density distribution. Our calculations are presented specifically for surface-gate-defined quasi-one-dimensional quantum wires in a GaAs-AlGaAs heterostructure but we expect our results to apply more generally for other low dimensional semiconductor systems. We show that at high densities with strong confinement, screening of electrons in the direction transverse to the wire is efficient and density modulations are not visible. In the low-density, weak-confinement regime, the exchange-correlation potential induces small density modulations as the electrons are depleted from the wire. At the weakest confinements and lowest densities, the electron density splits into two rows thereby forming a pair of quantum wires that lie beneath the surface gates. An additional double-well external potential forms at very low density which enhances this row splitting phenomenon. We produce phase diagrams that show a transition between the presence of a single quantum wire in a split-gate structure and two quantum wires. We suggest that this phenomenon can be used to pattern and modulate the electron density in low-dimensional structures with particular application to systems where a proximity effect from a surface gate would be valuable.