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J. Haenisch

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5 publications

preprint2016arXiv

Intrinsic and extrinsic pinning in NdFeAs(O,F): vortex trapping and lock-in by the layered structure

The Fe-based superconductors (FBS) present a large variety of compounds whose properties are affected to different extents by their crystal structures. Amongst them, the RE\it{RE}FeAs(O,F) (RE\it{RE}1111, where RE\it{RE} is a rare earth element) is the family with the highest critical temperature TcT_c but also with a large anisotropy and Josephson vortices as demonstrated in the flux-flow regime in Sm1111 (TcT_c ∼\sim 55 K). Here we focus our attention on the pinning properties of the lower-TcT_c Nd1111 in the flux-creep regime. We demonstrate that for H//c critical current density JcJ_c at high temperatures is dominated by point-defect pinning centres, whereas at low temperatures surface pinning by planar defects parallel to the c\it{c}-axis and vortex shearing prevail. When the field approaches the ab\it{ab}-planes, two different regimes are observed at low temperatures as a consequence of the transition between 3D-Abrikosov and 2D-Josephson vortices: one is determined by the formation of a vortex staircase structure and one by lock-in of the vortices parallel to the layers. This is the first study on FBS showing this behaviour in a full temperature, field, and angular range and it demonstrates that, despite the lower TcT_c and anisotropy of Nd1111 with respect to Sm1111, this compound is substantially affected by intrinsic pinning generating a strong ab\it{ab}-peak in JcJ_c.

preprint2010arXiv

Critical current scaling and anisotropy in oxypnictide superconductors

Investigating the anisotropy of superconductors permits an access to fundamental properties. Having succeeded in the fabrication of epitaxial superconducting LaFeAs(O,F) thin films we performed an extensive study of electrical transport properties. In face of multiband superconductivity we can demonstrate that a Blatter scaling of the angular dependent critical current densities can be adopted, although being originally developed for single band superconductors. In contrast to single band superconductors the mass anisotropy of LaFeAs(O,F) is temperature dependent. A very steep increase of the upper critical field and the irreversibility field can be observed at temperatures below 6K, indicating that the band with the smaller gap is in the dirty limit. This temperature dependence can be theoretically described by two dominating bands responsible for superconductivity. A pinning force scaling provides insight into the prevalent pinning mechanism and can be specified in terms of the Kramer model.

preprint2010arXiv

LaFeAsO1−x_{1-x}Fx_{x} thin films: high upper critical fields and evidence of weak link behavior

High-quality superconducting LaFeAsO1−x_{1-x}Fx_{x} thin films were grown on single crystalline LaAlO3_{3} substrates with critical temperatures (onset) up to 28 K. Resistive measurements in high magnetic fields up to 40 T reveal a paramagnetically limited upper critical field, μ0Hc2μ_{0}H_{c2}(0) around 77 T and a remarkable steep slope of -7.5 T/K near TcT_{c}. From transport measurements we observed a weak link behavior in low magnetic fields and the evidence for a broad reversible regime.

preprint2010arXiv

Scaling behaviour of the critical current in clean epitaxial Ba(Fe1-xCox)2As2 thin films

The angular-dependent critical current density, Jc(theta), and the upper critical field, Hc2(theta), of epitaxial Ba(Fe1-xCox)2As2 thin films have been investigated. No Jc(theta) peaks for H || c were observed regardless of temperatures and magnetic fields. In contrast, Jc(theta) showed a broad maximum at theta=90 degree, which arises from intrinsic pinning. All data except at theta=90 degree can be scaled by the Blatter plot. Hc2(theta) near Tc follows the anisotropic Ginzburg-Landau expression. The mass anisotropy increased from 1.5 to 2 with increasing temperature, which is an evidence for multi-band superconductivity.

preprint2009arXiv

Epitaxial LaFeAsOF thin films grown by pulsed laser deposition

Superconducting and epitaxially grown LaFeAsOF thin films were successfully prepared on (001)-oriented LaAlO3 substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with epitaxial relation (001)[100] parallel to (001)[100] and a FWHM value of 1deg. Furthermore, resistive measurement of the superconducting transition temperature revealed a Tc90 of 25K with a high residual resistive ratio of 6.8. The applied preparation technique, standard thin film pulsed laser deposition at room temperature in combination with a subsequent post annealing process, is suitable for fabrication of high quality LaFeAsO1-xFx thin films. A high upper critical field of 76.2 T was evaluated for magnetic fields applied perpendicular to the c-axis and the anisotropy was calculated to be 3.3 assuming single band superconductivity.

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