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E. Mondragon

E. Mondragon appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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astro-ph.IM physics.ins-det astro-ph.CO

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preprint2020arXiv

Description of CRESST-III Data

In CRESST-III, 10 cryogenic detector modules optimized for low energy thresholds were operated for almost two years (May 2016 - February 2018). Together with this document we are publishing data from the best performing detector module which has a nuclear recoil threshold of 30.1eV. With this data-set we were able to set limits on the cross-section for spin-dependent and spin-independent elastic scattering of dark matter particles off nuclei at dark matter masses down to 160MeV/c$^2$. We publish the energies of all events after data selection as well as of all events within the acceptance region for dark-matter searches. In this document we describe how to use these data sets.

preprint2019arXiv

Exploring CEvNS with NUCLEUS at the Chooz Nuclear Power Plant

Coherent elastic neutrino-nucleus scattering (CE$ν$NS) offers a unique way to study neutrino properties and to search for new physics beyond the Standard Model. Nuclear reactors are promising sources to explore this process at low energies since they deliver large fluxes of (anti-)neutrinos with typical energies of a few MeV. In this paper, a new-generation experiment to study CE$ν$NS is described. The NUCLEUS experiment will use cryogenic detectors which feature an unprecedentedly low energy threshold and a time response fast enough to be operated in above-ground conditions. Both sensitivity to low-energy nuclear recoils and a high event rate tolerance are stringent requirements to measure CE$ν$NS of reactor antineutrinos. A new experimental site, denoted the Very-Near-Site (VNS) at the Chooz nuclear power plant in France is described. The VNS is located between the two 4.25 GW$_{\mathrm{th}}$ reactor cores and matches the requirements of NUCLEUS. First results of on-site measurements of neutron and muon backgrounds, the expected dominant background contributions, are given. In this paper a preliminary experimental setup with dedicated active and passive background reduction techniques is presented. Furthermore, the feasibility to operate the NUCLEUS detectors in coincidence with an active muon-veto at shallow overburden is studied. The paper concludes with a sensitivity study pointing out the promising physics potential of NUCLEUS at the Chooz nuclear power plant.

preprint2019arXiv

First results on sub-GeV spin-dependent dark matter interactions with $^{7}$Li

In this work, we want to highlight the potential of lithium as a target for spin-dependent dark matter search in cryogenic experiments, with a special focus on the low-mass region of the parameter space. We operated a prototype detector module based on a Li$_2$MoO$_4$ target crystal in an above-ground laboratory. Despite the high background environment, the detector sets competitive limits on spin-dependent interactions of dark matter particles with protons and neutrons for masses between 0.8 GeV/c$^2$ and 1.5 GeV/c$^2$.

preprint2016arXiv

Cryogenic silicon detectors with implanted contacts for the detection of visible photons using the Neganov-Luke Effect

There is a common need in astroparticle experiments such as direct dark matter detection, 0ν\b{eta}\b{eta} (double beta decay without emission of neutrinos) and Coherent Neutrino Nucleus Scattering experiments for light detectors with a very low energy threshold. By employing the Neganov-Luke Effect, the thermal signal of particle interactions in a semiconductor absorber operated at cryogenic temperatures, can be amplified by drifting the photogenerated electrons and holes in an electric field. This technology is not used in current experiments, in particular because of a reduction of the signal amplitude with time which is due to trapping of the charges within the absorber. We present here the first results of a novel type of Neganov-Luke Effect detector with an electric field configuration designed to improve the charge collection within the semiconductor.