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Researcher profile

E. McCann

E. McCann contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

6 published item(s)

preprint2016arXiv

Zero-energy modes and valley asymmetry in the Hofstadter spectrum of bilayer graphene van der Waals heterostructures with hBN

We investigate the magnetic minibands of a heterostructure consisting of bilayer graphene (BLG) and hexagonal boron nitride (hBN) by numerically diagonalizing a two-band Hamiltonian that describes electrons in BLG in the presence of a moire potential. Due to inversion-symmetry breaking characteristic for the moire potential, the valley symmetry of the spectrum is broken, but despite this, the zero-energy Landau level in BLG survives, albeit with reduced degeneracy. In addition, we derive effective models for the low-energy features in the magnetic minibands and demonstrate the appearance of secondary Dirac points in the valence band, which we confirm by numerical simulations. Then, we analyze how single-particle gaps in the fractal energy spectrum produce a sequence of incompressible states observable under a variation of carrier density and magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Dirac edges of fractal magnetic minibands in graphene with hexagonal moire superlattices

We find a systematic reappearance of massive Dirac features at the edges of consecutive minibands formed at magnetic fields B_{p/q}= pϕ_0/(qS) providing rational magnetic flux through a unit cell of the moire superlattice created by a hexagonal substrate for electrons in graphene. The Dirac-type features in the minibands at B=B_{p/q} determine a hierarchy of gaps in the surrounding fractal spectrum, and show that these minibands have topological insulator properties. Using the additional $q$-fold degeneracy of magnetic minibands at B_{p/q}, we trace the hierarchy of the gaps to their manifestation in the form of incompressible states upon variation of the carrier density and magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene

In a multi-layer electronic system, stacking order provides a rarely-explored degree of freedom for tuning its electronic properties. Here we demonstrate the dramatically different transport properties in trilayer graphene (TLG) with different stacking orders. At the Dirac point, ABA-stacked TLG remains metallic while the ABC counterpart becomes insulating. The latter exhibits a gap-like dI/dV characteristics at low temperature and thermally activated conduction at higher temperatures, indicating an intrinsic gap ~6 meV. In magnetic fields, in addition to an insulating state at filling factor ν=0, ABC TLG exhibits quantum Hall plateaus at ν=-30, \pm 18, \pm 9, each of which splits into 3 branches at higher fields. Such splittings are signatures of the Lifshitz transition induced by trigonal warping, found only in ABC TLG, and in semi-quantitative agreement with theory. Our results underscore the rich interaction-induced phenomena in trilayer graphene with different stacking orders, and its potential towards electronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Evidence for spin memory in the electron phase coherence in graphene

We measure the dependence of the conductivity of graphene as a function of magnetic field, temperature and carrier density and discover a saturation of the dephasing length at low temperatures that we ascribe to spin memory effects. Values of the spin coherence length up to eight microns are found to scale with the mean free path. We consider different origins of this effect and suggest that it is controlled by resonant states that act as magnetic-like defects. By varying the level of disorder, we demonstrate that the spin coherence length can be tuned over an order of magnitude.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Screening in gated bilayer graphene via variational calculus

We analyze the response of bilayer graphene to an external transverse electric field using a variational method. A previous attempt to do so in a recent paper by Falkovsky [Phys. Rev. B 80, 113413 (2009)] is shown to be flawed. Our calculation reaffirms the original results obtained by one of us [E. McCann, Phys. Rev. B 74, 161403(R) (2006)] by a different method. Finally, we generalize these original results to describe a dual-gated bilayer graphene device.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Influence of interlayer asymmetry on magneto-spectroscopy of bilayer graphene

We present a self-consistent calculation of the interlayer asymmetry in bilayer graphene caused by an applied electric field in magnetic fields. We show how this asymmetry influences the Landau level spectrum in bilayer graphene and the observable inter-Landau level transitions when they are studied as a function of high magnetic field at fixed filling factor as measured experimentally by E.A. Henriksen et al., Phys. Rev. Lett. 100 (2008), 087403. We also analyze the magneto-optical spectra of bilayer flakes in the photon-energy range corresponding to transitions between degenerate and split bands of bilayers.

0 citations0 reviewsNo code linkedOpen access