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E. Lähderanta

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con

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preprint2024arXiv

Evolution of the pseudogap temperature dependence in YBa $_2$ Cu $_3$ O $_{7-δ}$ films under the influence of a magnetic field

The evolution of the temperature dependence of pseudogap $Δ$ *(T) in optimally doped (OD) YBa $_2$ Cu $_3$ O $_{7-δ}$ (YBCO) films with $T_{c}$ = 88.7 K under the influence of a magnetic field $B$ up to 8 T has been studied in detail. It has been established that the shape of $Δ$ *(T) for various $B$ over the entire range from the pseudogap opening temperature $T$ * to $T_{01}$ , below which superconducting fluctuations occur, has a wide maximum at the BEC-BCS crossover temperature $T_{pair}$ , which is typical for OD films and untwinned YBCO single crystals. $T$ * was shown to be independent on $B$ , whereas $T_{pair}$ shifts to the low temperature region along with increase of $B$ , while the maximum value of $Δ$ *( $T_{pair}$ ) remains practically constant regardless of $B$ . It was revealed that as the field increases, the low-temperature maximum near the 3D-2D transition temperature $T_{0}$ is blurred and disappears at $B$ > 5 T. Moreover, above the Ginzburg temperature $T_{G}$ , which limits superconducting fluctuations from below, at $B$ > 0.5 T, a minimum appears on $Δ$ *(T) at $T_{min}$ , which becomes very pronounced with a further increase in the field. As a result, the overall value of $Δ$ *(T) decreases noticeably most likely due to pair-breaking affect of a magnetic field. A comparison of $Δ$ *(T) near $T_{c}$ with the Peters-Bauer theory shows that the density of fluctuating Cooper pairs actually decreases from <<n $_{\uparrow}$ n $_{\downarrow}$ >> $\approx$ 0.31 at $B$ = 0 to <<n $_{\uparrow}$ n $_{\downarrow}$ >> $\approx$ 0.28 in the field 8 T. The observed behavior of $Δ$ *(T) around $T_{min}$ is assumed to be due to the influence of a two-dimensional vortex lattice created by the magnetic field, which prevents the formation of fluctuating Cooper pairs near $T_{c}$ .

preprint2021arXiv

Prediction of a Heusler alloy with switchable metal-to-half-metal behavior

We propose a ferromagnetic Heusler alloy that can switch between a metal and a half-metal. Thiseffect can provide tunable spintronics properties. Using the density functional theory (DFT) withreliable implementations of the electron correlation effects, we find Mn2ScSi total energy curvesconsisting of distinct branches with a very small energy difference. The phase at low lattice crystalvolume is a low magnetic half-metallic state while the phase at high lattice crystal volume is a highmagnetic metallic state. We suggest that the transition between half-metallic and metallic statescan be triggered by a triaxial contraction/expansion of the crystal lattice or by an external magneticfield if we assume that the lattice is cubic and remains cubic under expansion/contraction. However,the phase at high volume can also undergo an austenite-martensite phase transition because of thepresence of Jahn-Teller active3delectrons on the Mn atoms.

preprint2020arXiv

Electronic structure beyond the generalized gradient approximation for Ni $_2$ MnGa

The stability of the nonmodulated martensitic phase, the austenitic Fermi surface and the phonon dispersion relations for ferromagnetic Ni $_2$ MnGa are studied using density functional theory. Exchange-correlation effects are considered with various degrees of precision, starting from the simplest local spin density approximation (LSDA), then adding corrections within the generalized gradient approximation (GGA) and finally, including the meta-GGA corrections within the strongly constrained and appropriately normed (SCAN). We discuss a simple procedure to reduce a possible overestimation of magnetization and underestimation of nesting vector in SCAN by parametrically decreasing self-interaction corrections.

preprint2015arXiv

Resonant 2D-2D tunneling with account for spin-orbit interaction

We present a theory of quantum tunneling between 2D layers with account for Rashba and Dresselhaus spin-orbit interaction (SOI) in the layers. Energy and momentum conservation results in a single resonant peak in the tunnel conductance between two 2D layers as has been experimentally observed for two quantum wells (QW) in GaAs/AlGaAs heterostructures. The account for SOI in the layers leads to a complex pattern in the tunneling characteristic with typical features corresponding to SOI energy. For this manifestation of SOI to be observed experimentally the characteristic energy should exceed the resonant broadening related to the particles quantum lifetime in the layers. We perform an accurate analysis of the known experimental data on electron and hole 2D-2D tunneling in AlGaAs/GaAs heterostructures. It appears that for the electron tunneling the manifestation of SOI is difficult to observe, but for the holes tunneling the parameters of the real structures used in the experiments are very close to those required by the resolution criteria. We also consider a new promising candidate for the effect to be observed, that is p-doped SiGe strained heterostructures. The reported parameters of cubic Rashba SOI and quantum lifetime in strained Ge QWs fabricated up to date already match the criteria for observing SOI in 2D-2D heavy holes tunneling. As supported by our calculations small adjustments of the parameters for AlGaAs/GaAs p-type QWs or simply designing a 2D-2D tunneling experiment for SiGe case are very likely to reveal the SOI features in the 2D-2D tunneling.

preprint2012arXiv

Pecularities of Hall effect in GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs (\times {\approx} 0.2) heterostructures with high Mn content

Transport properties of GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs structures containing InxGa1-xAs (\times {\approx} 0.2) quantum well (QW) and Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content, are studied. In these structures DL is separated from QW by GaAs spacer with the thickness ds = 2-5 nm. All structures possess a dielectric character of conductivity and demonstrate a maximum in the resistance temperature dependence Rxx(T) at the temperature {\approx} 46K which is usually associated with the Curie temperature Tc of ferromagnetic (FM) transition in DL. However, it is found that the Hall effect concentration of holes pH in QW does not decrease below TC as one ordinary expects in similar systems. On the contrary, the dependence pH(T) experiences a minimum at T = 80-100 K depending on the spacer thickness, then increases at low temperatures more strongly than ds is smaller and reaches a giant value pH = (1-2)\cdot10^13 cm^(-2). Obtained results are interpreted in the terms of magnetic proximity effect of DL on QW, leading to induce spin polarization of the holes in QW. Strong structural and magnetic disorder in DL and QW, leading to the phase segregation in them is taken into consideration. The high pH value is explained as a result of compensation of the positive sign normal Hall effect component by the negative sign anomalous Hall effect component.

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E. Lähderanta

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5 publications

Evolution of the pseudogap temperature dependence in YBa $_2$ Cu $_3$ O $_{7-δ}$ films under the influence of a magnetic field

Prediction of a Heusler alloy with switchable metal-to-half-metal behavior

Electronic structure beyond the generalized gradient approximation for Ni $_2$ MnGa

Resonant 2D-2D tunneling with account for spin-orbit interaction

Pecularities of Hall effect in GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs (\times {\approx} 0.2) heterostructures with high Mn content

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E. Lähderanta

Research overview

Is this your work?

5 publications

Evolution of the pseudogap temperature dependence in YBa2_22​Cu3_33​O7−δ_{7-δ}7−δ​ films under the influence of a magnetic field

Prediction of a Heusler alloy with switchable metal-to-half-metal behavior

Electronic structure beyond the generalized gradient approximation for Ni2_22​MnGa

Resonant 2D-2D tunneling with account for spin-orbit interaction

Pecularities of Hall effect in GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs (\times {\approx} 0.2) heterostructures with high Mn content

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Building this map preview

Evolution of the pseudogap temperature dependence in YBa $_2$ Cu $_3$ O $_{7-δ}$ films under the influence of a magnetic field

Electronic structure beyond the generalized gradient approximation for Ni $_2$ MnGa