Researcher profile

E. J. Wildman

E. J. Wildman contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 17 - UnverifiedVerification L1Unclaimed author
4works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2015arXiv

A High Pressure Neutron Study of Colossal Magnetoresistant NdMnAsO0.95F0.05

A high pressure neutron diffraction study of the oxypnictide NdMnAsO0.95F0.05 has been performed at temperatures of 290 K - 383 K and pressures up to 8.59 GPa. The results demonstrate that the antiferromagnetic order of the Mn spins is robust to pressures of up to 8.59 GPa. TN is enhanced from 360 K to 383 K upon applying an external pressure of 4.97 GPa, a rate of 4.63 K/GPa. NdMnAsO0.95F0.05 is shown to violate Bloch's rule which would suggest that NdMnAsO0.95F0.05 is on the verge of a localised to itinerant transition. There is no evidence of a structural transition but applied pressure tends to result in more regular As-Mn-As and Nd-O-Nd tetrahedra. The unit cell is significantly more compressible along the c-axis than the a-axis, as the inter-layer coupling is weaker than the intrinsic bonds contained within NdO and MnAs slabs.

preprint2015arXiv

The Electronic and Magnetic Properties of Magnetoresistant Nd1-xSrxMnAsO Oxyarsenides

The oxypnictides Nd1-xSrxMnAsO have been successfully synthesised with x up to 0.1. A synchrotron X-ray diffraction study demonstrates that there is no change in crystal symmetry upon doping with Sr. An expansion of the inter-layer distance between Nd-O-Nd and As-Mn-As blocks is observed with increasing x. Results from variable temperature neutron diffraction and resistivity measurements show that the local moment antiferromagnetic order of the Mn spins is preserved as the [MnAs]- layers are hole doped and the materials are driven metallic for x > 0.05. A sizeable positive magnetoresistance is observed at low temperature which demonstrates that multiple MR mechanisms are possible in LnMnAsO oxypnictides.

preprint2012arXiv

A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)

A variable temperature neutron and synchrotron diffraction study have been performed on the giant magnetoresistant oxypnictides LnMnAsO (Ln = La, Nd). The low temperature magnetic structures have been studied and results show a spin reorientation of the Mn2+ spins below TN (Nd) for NdMnAsO. The Mn2+ spins rotate from alignment along c to alignment into the basal plane and the Mn2+ and Nd3+ moments refine to 3.54(4) μB and 1.93(4) μB respectively at 2 K. In contrast there is no change in magnetic structure with temperature for LaMnAsO. There is no evidence of a structural transition down to 2 K, however discontinuities in the cell volume, Ln-O and Mn-As bond lengths are detected at \sim 150 K for both materials. This temperature coincides with the electronic transition previously reported and suggests a coupling between electronic and lattice degrees of freedom.

preprint2012arXiv

Colossal Magnetoresistance in the Mn2+ Oxypnictides NdMnAsO1-xFx

Colossal magnetoresistance (CMR) is a rare phenomenon in which the electronic resistivity of a material can be decreased by orders of magnitude upon application of a magnetic field. Such an effect could be the basis of the next generation of magnetic memory devices. Here we report CMR in the antiferromagnetic oxypnictide NdMnAsO1-xFx as a result of competition between an antiferromagnetic insulating phase with strong electron correlations and a paramagnetic semiconductor upon application of a magnetic field. The discovery of CMR in antiferromagnetic Mn2+ oxypnictide materials could open up an array of materials for further investigation and optimisation for technological applications.