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Researcher profile

E. H. Huisman

E. H. Huisman contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2012arXiv

Localized states influence spin transport in epitaxial graphene

We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001) (MLEG). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements in MLEG and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Public exhibit for demonstrating the quantum of electrical conductance

We present a new robust setup that explains and demonstrates the quantum of electrical conductance for a general audience and which is continuously available in a public space. The setup allows users to manually thin a gold wire of several atoms in diameter while monitoring its conductance in real time. During the experiment, a characteristic step-like conductance decrease due to rearrangements of atoms in the cross-section of the wire is observed. Just before the wire breaks, a contact consisting of a single atom with a characteristic conductance close to the quantum of conductance can be maintained up to several seconds. The setup is operated full-time, needs practically no maintenance and is used on different educational levels.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Bistable hysteresis and resistance switching in hydrogen gold junctions

Current-voltage characteristics of H2-Au molecular junctions exhibit intriguing steps around a characteristic voltage of 40 mV. Surprisingly, we find that a hysteresis is connected to these steps with a typical time scale > 10 ms. This time constant scales linearly with the power dissipated in the junction beyond an ofset power P_s = IV_s. We propose that the hysteresis is related to vibrational heating of both the molecule in the junction and a set of surrounding hydrogen molecules. Remarkably, we can engineer our junctions such that the hysteresis' characteristic time becomes >days. We demonstrate that reliable switchable devices can be built from such junctions.

0 citations0 reviewsNo code linkedOpen access