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Source author record

E. Diez

E. Diez appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.str-elcond-matcond-mat.dis-nncond-mat.mtrl-scicond-mat.othercond-mat.quant-gas

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Published work

8 published item(s)

preprint2014arXiv

Critical point for the CAF-F phase transition at charge neutrality in bilayer graphene

We report on magneto-transport measurements up to 30 T performed on a bilayer graphene Hall bar, enclosed by two thin hexagonal boron nitride flakes. Our high mobility sample exhibits an insulating state at neutrality point which evolves into a metallic phase when a strong in-plane field is applied, as expected for a transition from a canted antiferromagnetic to a ferromagnetic spin ordered phase. For the first time we individuate a temperature-independent crossing in the four-terminal resistance as a function of the total magnetic field, corresponding to the critical point of the transition. We show that the critical field scales linearly with the perpendicular component of the field, as expected from the underlying competition between the Zeeman energy and interaction-induced anisotropies. A clear scaling of the resistance is also found and an universal behavior is proposed in the vicinity of the transition.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Angle dependent conductance in graphene

In this paper, we study a theoretical method to calculate the conductance across a square barrier potential in monolayer graphene. We have obtained an analytical expression for the transmission coefficient across a potential barrier for monolayer graphene. Using the transmission coefficient obtained we have an analytical expression for the conductance. This expression will be used to calculate the conductance in the case in which there is a potential barrier, which in our case will modelise the behaviour of a top gate voltage of a field effect transistor. Once this analysis has been performed we study the scenario in which carriers scatter with the potential barrier with different incidence angles and we have found that for any incident angle an effective gap is induced.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Circularly Polarized Resonant Rayleigh Scattering and Skyrmions in the $ν$ = 1 Quantum Hall Ferromagnet

We use the circularly polarized resonant Rayleigh scattering (RRS) to study the quantum Hall ferromagnet at $ν$ = 1. At this filling factor we observe a right handed copolarized RRS which probes the Skyrmion spin texture of the electrons in the photoexcited grounds state. The resonant scattering is not present in the left handed copolarization, and this can be related to the correlation between Skymionic effects, screening and spin wave excitations. These results evidence that RRS is a valid method for the study of the spin texture of the quantum Hall states.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Optical probing of correlation driven liquid-to-insulator transition in 2D electron gas

We study the quantum Hall liquid and the metal-insulator transition in a high mobility two dimensional electron gas, by means of photoluminescence and magneto-transport. In the integer and fractional regime at nu > 1/3, analyzing the emission energy dispersion we probe the magneto-Coulomb screening and the hidden symmetry of the electron liquid. In the fractional regime above above nu =1/3 the system undergoes the metal-to-insulator transition, and in the insulating phase the dispersion becomes linear with evidence of an increased renormalized mass.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Plateau insulator transition in graphene

The quantum Hall effect in a single-layer graphene sample is studied in strong magnetic fields up to 28 T. Our measurements reveal the existence of a metal- insulator transition from filling factor $ν=-2$ to $ν=0$. The value of the universal scaling exponent is found to be $κ=0.57 $ in graphene and therefore in a truly two-dimensional system. This value of $κ$ is in agreement with the accepted universal value for the plateau-insulator transitions in standard quasi two-dimensional electron and hole gases.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Resonant Rayleigh Scattering in Ordered and Intentionally Disordered Semiconductor Superlattices

We report the experimental study of resonant Rayleigh scattering in GaAs-AlGaAs superlattices with ordered and intentionally disordered potential profiles (correlated and uncorrelated) in the growth direction z. We show that the intentional disorder along z modify markedly the energy dispersion of the dephasing rates of the excitons. The application of an external magnetic field in the same direction allows the continuous tuning of the in plane exciton localization and to study the interplay between the in plane and vertical disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Symmetry-Induced Tunnelling in One-Dimensional Disordered Potentials

A new mechanism of tunnelling at macroscopic distances is proposed for a wave packet localized in one-dimensional disordered potential with mirror symmetry, V(-x)=V(x). Unlike quantum tunnelling through a regular potential barrier, which occurs only at the energies lower then the barrier height, the proposed mechanism of tunnelling exists even for weak white-noise-like scattering potentials. It also exists in classical circuits of resonant contours with random resonant frequencies. The latter property may be used as a new method of secure communication, which does not require coding and decoding of the transmitting signal.

0 citations0 reviewsNo code linkedOpen access
preprint1995arXiv

Intentionally disordered superlattices with high dc conductance

We study disordered quantum-well-based semiconductor superlattices where the disorder is intentional and short-range correlated. Such systems consist of quantum-wells of two different thicknesses randomly distributed along the growth direction, with the additional constraint that wells of one kind always appears in pairs. Imperfections due to interface roughness are considered by allowing the quantum-well thicknesses to fluctuate around their {\em ideal} values. As particular examples, we consider wide-gap (GaAs-Ga$_{1-x}$Al$_{x}$As) and narrow-gap (InAs-GaSb) superlattices. We show the existence of a band of extended states in perfect correlated disordered superlattices, giving rise to a strong enhancement of their finite-temperature dc conductance as compared to usual random ones whenever the Fermi level matches this band. This feature is seen to survive even if interface roughness is taken into account. Our predictions can be used to demonstrate experimentally that structural correlations inhibit the localization effects of disorder, even in the presence of imperfections. This effect might be the basis of new, filter-like or other specific-purpose electronic devices.

0 citations0 reviewsNo code linkedOpen access