Researcher profile

E. Bocquillon

E. Bocquillon contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2020arXiv

Fractional statistics in anyon collisions

Two-dimensional systems can host exotic particles called anyons whose quantum statistics are neither bosonic nor fermionic. For example, the elementary excitations of the fractional quantum Hall effect at filling factor $ν=1/m$ (where m is an odd integer) have been predicted to obey abelian fractional statistics, with a phase $φ$ associated with the exchange of two particles equal to $π/m$. However, despite numerous experimental attempts, clear signatures of fractional statistics remain elusive. Here we experimentally demonstrate abelian fractional statistics at filling factor $ν=1/3$ by measuring the current correlations resulting from the collision between anyons at a beam-splitter. By analyzing their dependence on the anyon current impinging on the splitter and comparing with recent theoretical models, we extract $φ=π/3$, in agreement with predictions.

preprint2020arXiv

Observation of Volkov-Pankratov states in topological HgTe heterojunctions using high-frequency compressibility

It is well established that topological insulators sustain Dirac fermion surface states as a consequence of band inversion in the bulk. These states have a helical spin polarization and a linear dispersion with large Fermi velocity. In this article we report on a set of experimental observations indicating the existence of massive surface states. These states are confined at the interface and dominate equilibrium and transport properties at high energy and/or high electric field. By monitoring the AC admittance of HgTe topological insulator field-effect capacitors, we access the compressibility and conductivity of surface states in a broad range of energy and electric fields. The Dirac surface states are characterized by a compressibility minimum, a linear energy dependence and a high mobility persisting up to energies much larger than the transport bandgap of the bulk. New features are revealed at high energies with signatures such as conductance peaks, compressibility bumps, a strong charge metastability and a Hall resistance anomaly. These features point to the existence of excited massive surface states, responsible for a strong intersubband scattering with the Dirac states and the nucleation of metastable bulk carriers. The spectrum of excited states agrees with predictions of a phenomenological model of the topological-trivial semiconductor interface. The model accounts for the finite interface depth and the effect of electric fields. The existence of excited topological states is essential for the understanding of topological phases and opens a route for engineering and exploiting topological resources in quantum technology.

preprint2020arXiv

Quantum tomography of electrical currents

In quantum nanoelectronics, time-dependent electrical currents are built from few elementary excitations emitted with well-defined wavefunctions. However, despite the realization of sources generating quantized numbers of excitations, and despite the development of the theoretical framework of time-dependent quantum electronics, extracting electron and hole wavefunctions from electrical currents has so far remained out of reach, both at the theoretical and experimental levels. In this work, we demonstrate a quantum tomography protocol which extracts the generated electron and hole wavefunctions and their emission probabilities from any electrical current. It combines two-particle interferometry with signal processing. Using our technique, we extract the wavefunctions generated by trains of Lorentzian pulses carrying one or two electrons. By demonstrating the synthesis and complete characterization of electronic wavefunctions in conductors, this work offers perspectives for quantum information processing with electrical currents and for investigating basic quantum physics in many-body systems.