Researcher profile

Dumitru O. Dumcenco

Dumitru O. Dumcenco contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2013arXiv

Atomic mechanism of phase transition between metallic and semiconducting MoS2 single-layers

Structural transformation between metallic (1T) and semiconducting (2H) phases of single-layered MoS2 was systematically investigated by an in situ STEM with atomic precision. The 1T/2H phase transition is comprised of S and/or Mo atomic-plane glides, and requires an intermediate phase (α-phase) as an indispensable precursor. Migration of two kinds of boundaries (β and γ-boundaries) is also found to be responsible for the growth of the second phase. The 1T phase can be intentionally introduced in the 2H matrix by using a high dose of incident electron beam during heating the MoS2 single-layers up to 400~700°C in high vacuum and indeed controllable in size. This work may lead to the possible fabrication of composite nano-devices made of local domains with distinct electronic properties.

preprint2013arXiv

Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity

The differences in the behavior of Re (n-type) and Au (p-type) dopant atoms in single-layered MoS2 were investigated by in situ scanning transmission electron microscopy. Re atoms tend to occupy Mo sites, while Au atoms exist as adatoms and show larger mobility under the electron beam. Re substituted to Mo site showed enhanced chemical affinity, evidenced by agglomeration of Re adatoms around these sites. This may explain the difficulties in achieving a high compositional rate of homogeneous Re doping in MoS2. In addition, an in situ coverage experiment together with density functional theory calculations discovered a high surface reactivity and agglomeration of other impurity atoms such as carbon at the Re doped sites.