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Researcher profile

Arkady V. Krasheninnikov

Arkady V. Krasheninnikov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-ph

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Published work

8 published item(s)

preprint2026arXiv

Creation and Microscopic Origins of Single-Photon Emitters in Transition Metal Dichalcogenides and Hexagonal Boron Nitride

We highlight recent advances in the controlled creation of single-photon emitters in van der Waals materials and in the understanding of their atomistic origin. We focus on quantum emitters created in monolayer transition-metal dichalcogenide semiconductors, which provide spectrally sharp single-photon emission at cryogenic temperatures, and the ones in insulating hBN, which provide bright and stable single-photon emission up to room temperature. After introducing the different classes of quantum emitters in terms of band-structure properties, we review the defect creation methods based on electron and ion irradiation as well as local strain engineering and plasma treatments. A main focus of the review is put on discussing the microscopic origin of the quantum emitters as revealed by various experimental platforms, including optical and scanning probe methods.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Data-driven quest for two-dimensional non-van der Waals materials

Two-dimensional (2D) materials are frequently associated with the sheets which form bulk layered compounds bonded by van der Waals (vdW) forces. The anisotropy and weak interaction between the sheets have also been the main criteria in the computational search for new 2D systems, which predicted about 2000 exfoliable compounds. However, several representatives of a new type of non-vdW 2D systems, such as hematene or ilmenene, which have no layered 3D analogues, and which, unlike, e.g. silicene, do not need to strongly interact with the substrate to be stable, were recently manufactured. The family of non-vdW 2D materials is an attractive playground for data-driven high-throughput approaches as computational design principles are still missing. Here, we outline a new set of 8 binary and 20 ternary candidates by filtering the AFLOW-ICSD database according to the structural prototype of the first two template systems realized in experiment. All materials show a strong structural relaxation upon confinement to 2D which is essential to correctly estimate the bonding strength between facets. The oxidation state of the cations at the surface of the sheets is demonstrated to regulate the inter-facet binding energy with low oxidation states leading to weak bonding. We anticipate this descriptor to be highly useful to obtain novel 2D materials, providing clear guidelines for experiments. Our calculations further indicate that the materials exhibit a vast range of appealing electronic, optical and magnetic properties, which is expected to also make them attractive for potential applications particularly in spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Band Bending and Valence Band Quantization at Line Defects in MoS$_2$

The variation of the electronic structure normal to 1D defects in quasi-freestanding MoS$_2$, grown by molecular beam epitaxy, is investigated through high resolution scanning tunneling spectroscopy at $5$K. Strong upwards bending of valence and conduction bands towards the line defects is found for the 4|4E mirror twin boundary and island edges, but not for the 4|4P mirror twin boundary. Quantized energy levels in the valence band are observed wherever upwards band bending takes place. Focusing on the common 4|4E mirror twin boundary, density functional theory calculations give an estimate of its charging, which agrees well with electrostatic modeling. We show that the line charge can also be assessed from the filling of the boundary-localized electronic band, whereby we provide a measurement of the theoretically predicted quantized polarization charge at MoS$_2$ mirror twin boundaries. These calculations elucidate the origin of band bending and charging at these 1D defects in MoS$_2$. The 4|4E mirror twin boundary not only impairs charge transport of electrons and holes due to band bending, but holes are additionally subject to a potential barrier, which is inferred from the independence of the quantized energy landscape on either side of the boundary.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Robust Magnetoelectric Effect in Decorated Graphene/In2Se3 Heterostructure

Magnetoelectric effect is a fundamental physics phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging field of spintronics. Here, we show by first-principles studies that ferroelectric (FE) polarization of an In2Se3 monolayer can modulate the magnetism of an adjacent transition-metal (TM) decorated graphene layer via an FE induced electronic transition. The TM nonbonding d-orbital shifts downward and hybridizes with carbon p states near the Fermi level, suppressing the magnetic moment, under one FE polarization, but on reversed FE polarization this TM d-orbital moves upward, restoring the original magnetic moment. This finding of robust magnetoelectric effect in TM decorated graphene/In2Se3 heterostructure offers powerful insights and a promising avenue for experimental exploration of FE controlled magnetism in 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles

We calculate from first principles the electronic structure and optical properties of a number of transition metal dichalcogenide (TMD) bilayer heterostructures consisting of MoS2 layers sandwiched with WS2, MoSe2, MoTe2, BN, or graphene sheets. Contrary to previous works, the systems are constructed in such a way that the unstrained lattice constants of the constituent incommensurate monolayers are retained. We find strong interaction between the Γ-point states in all TMD/TMD heterostructures, which can lead to an indirect gap. On the other hand, states near the K-point remain as in the monolayers. When TMDs are paired with BN or graphene layers, the interaction around Γ-point is negligible, and the electronic structure resembles that of two independent monolayers. Calculations of optical properties of the MoS2/WS2 system show that even when the valence and conduction band edges are located in different layers, the mixing of optical transitions is minimal, and the optical characteristics of the monolayers are largely retained in these heterostructures. The intensity of interlayer transitions is found to be negligibly small, a discouraging result for engineering the optical gap of TMDs by heterostructuring.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity

The differences in the behavior of Re (n-type) and Au (p-type) dopant atoms in single-layered MoS2 were investigated by in situ scanning transmission electron microscopy. Re atoms tend to occupy Mo sites, while Au atoms exist as adatoms and show larger mobility under the electron beam. Re substituted to Mo site showed enhanced chemical affinity, evidenced by agglomeration of Re adatoms around these sites. This may explain the difficulties in achieving a high compositional rate of homogeneous Re doping in MoS2. In addition, an in situ coverage experiment together with density functional theory calculations discovered a high surface reactivity and agglomeration of other impurity atoms such as carbon at the Re doped sites.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Strains Induced by Point Defects in Graphene on a Metal

Strains strongly affect the properties of low-dimensional materials, such as graphene. By combining in situ, in operando, reflection high energy electron diffraction experiments with first-principles calculations, we show that large strains, above 2%, are present in graphene during its growth by chemical vapor deposition on Ir(111) and when it is subjected to oxygen etching and ion bombardment. Our results unravel the microscopic relationship between point defects and strains in epitaxial graphene and suggest new avenues for graphene nanostructuring and engineering its properties through introduction of defects and intercalation of atoms and molecules between graphene and its metal substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping

Using first-principles atomistic simulations, we study the response of atomically-thin layers of transition metal dichalcogenides (TMDs) - a new class of two-dimensional inorganic materials with unique electronic properties - to electron irradiation. We calculate displacement threshold energies for atoms in 21 different compounds and estimate the corresponding electron energies required to produce defects. For a representative structure of MoS2, we carry out high-resolution transmission electron microscopy experiments and validate our theoretical predictions via observations of vacancy formation under exposure to a 80 keV electron beam. We further show that TMDs can be doped by filling the vacancies created by the electron beam with impurity atoms. Thereby, our results not only shed light on the radiation response of a system with reduced dimensionality, but also suggest new ways for engineering the electronic structure of TMDs.

0 citations0 reviewsNo code linkedOpen access