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Duc-The Ngo

Duc-The Ngo contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.ins-det

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Published work

3 published item(s)

preprint2013arXiv

Interfacial tuning of perpendicular magnetic anisotropy and spin magnetic moment in CoFe/Pd multilayers

We report on a strong perpendicular magnetic anisotropy in [CoFe 0.4nm/Pd t]6 (t = 1.0-2.0 nm) multilayers fabricated by DC sputtering in a ultrahigh vacuum chamber. Saturation magnetization, $M_s$, and uniaxial anisotropy, $K_u$, of the multilayers decrease with increasing the spacing thickness, with a $M_s$ of 155 emu/cc and a $K_u$ of 1.14$\times 10^5$ J/m$^3$ at a spacing thickness of t = 2 nm. X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements reveal that spin and orbital magnetic moments of Co and Fe in CoFe film decrease as function of Pd thickness, indicating the major contribution of surface/interfacial magnetism to the magnetic properties of the film.

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preprint2012arXiv

CoB/Ni-Based Multilayer Nanowire with High-Speed Domain Wall Motion under Low Current Control

The spin-transfer torque motion of magnetic domain walls (DWs) in a CoB/Ni-based nanowire driven by a low current density of (1.12\pm0.8)\times10^{11} A m^{-2} has been observed indirectly by magnetotransport measurements. A high DW velocity of 85\pm4 m/s at zero field was measured at the threshold current density. Upon increasing the current density to 2.6\times10^{11} A m^{-2}, the DW velocity increases to 197\pm16 m/s before decreasing quickly in the high-current-density regime attributed to nonadiabatic spin-transfer torque at a low damping factor and weak pinning. The addition of B atoms to the Co layers decreased the magnitude of saturation magnetization, Gilbert damping factor, and density of pinning sites, making the CoB/Ni multilayer nanowire favorable for practical applications.

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preprint2011arXiv

Modulation of domain wall dynamics in TbFeCo single layer nanowire

We demonstrate the possibility to write and modulate the magnetic domain walls in a TbFeCo single layer nanowire (300 nm width, 150 $μ$m length). To realize this, a tiny magnetic domain was nucleated by an Oersted field produced by a 1.6 MHz pulse current (35 mA in amplitude, 5-40 ns in length) crossed the wire. To write the wall to the wire, a DC current was used to drive the nucleated domain (with two walls in two sides) to the wire in accordance with spin-transfer torque mechanism. A critical current density of $J_c = 3.5\times10^{10} Am^{-2}$ was required to control the motion of the walls in the wire. It was found that the size of the domain moving in the wire could be adjusted by either external field or the length of the nucleated pulse current. This could be considered as an important note for writing process in domain wall spin-torque devices, especially, memory elements.

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