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Duane D. Johnson

Duane D. Johnson contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

Efficient machine-learning model for fast assessment of elastic properties of high-entropy alloys

We combined descriptor-based analytical models for stiffness-matrix and elastic-moduli with mean-field methods to accelerate assessment of technologically useful properties of high-entropy alloys, such as strength and ductility. Model training for elastic properties uses Sure-Independence Screening (SIS) and Sparsifying Operator (SO) method yielding an optimal analytical model, constructed with meaningful atomic features to predict target properties. Computationally inexpensive analytical descriptors were trained using a database of the elastic properties determined from density functional theory for binary and ternary subsets of Nb-Mo-Ta-W-V refractory alloys. The optimal Elastic-SISSO models, extracted from an exponentially large feature space, give an extremely accurate prediction of target properties, similar to or better than other models, with some verified from existing experiments. We also show that electronegativity variance and elastic-moduli can directly predict trends in ductility and yield strength of refractory HEAs, and reveals promising alloy concentration regions.

preprint2022arXiv

Vacancy formation energies and migration barriers in multi-principal element alloys

Multi-principal element alloys (MPEAs) continue to garner interest as structural and plasma-facing materials due to their structure stability and increased resistance to radiation damage. Despite sensitivity of mechanical behavior to irradiation and point-defect formation, there has been scant attention on understanding vacancy stability and diffusion in refractory-based MPEAs. Using density-functional theory, we examine vacancy stability and diffusion barriers in body-centered cubic (Mo0.95W0.05)0.85Ta0.10(TiZr)0.05. The results in this MPEA show strong dependence on environment, originating from local lattice distortion associated with charge-transfer between neighboring atoms that vary with different chemical environments. We find a correlation between degree of lattice distortion and migration barrier: (Ti, Zr) with less distortion have lower barriers, while (Mo, W) with larger distortion have higher barriers, depending up local environments. Under irradiation, our findings suggest that (Ti, Zr) are significantly more likely to diffuse than (Mo, W) while Ta shows intermediate effect. As such, material degradation caused by vacancy diffusion can be controlled by tuning composition of alloying elements to enhance creep strength at extreme operating temperatures and harsh conditions.

preprint2021arXiv

Effect of substitutional doping and disorder on the phase stability, magnetism, and half-metallicity of Heusler alloys

Spintronics is the fast growing field that will play a key role in optimizing power consumption, memory, and processing capabilities of nanoelectronic devices. Heusler alloys are potential candidates for application in spintronics due to their room temperature (RT) half-metallicity, high Curie temperature, low lattice mismatch with most substrates, and strong control on electronic density of states at Fermi level. In this work, we investigate the effect of {substitutional doping and disorder} on the half-metallicity, phase stability, and magnetism of Heusler alloys using density functional theory methods. Our study shows that electronic and magnetic properties of half/full-Heusler alloys can be tuned by changing electron-count through controlled variation of chemical compositions of alloying elements. We provide a detailed discussion on the effect of substitutional doping and disorder on the tunability of half-metallic nature of Co$_{2}$MnX and NiMnX based Heusler alloys, where X represents group 13\textendash 16 and period 3\textendash 6 elements of the periodic table. {Based on the idea of electron count and disorder, we predicted a possible existence of thermodynamically stable half-metallic multicomponent bismuthides, for example, (CuNi$_{3}$)Mn$_{4}$Bi$_{4}$ and (ZnNi$_{7}$)Mn$_{8}$Bi$_{8}$, through substitution doping at Ni site by specific Cu and Zn composition in half-Heusler NiMnBi.} We believe that the design guide {based on electron-counts} presented for half-metals will play a key role in electronic-structure engineering of novel Heusler alloys for spintronic application, which will accelerate the development and synthesis of novel materials.

preprint2020arXiv

Accelerating computational modeling and design of high-entropy alloys

With huge design spaces for unique chemical and mechanical properties, we remove a roadblock to computational design of {high-entropy alloys} using a metaheuristic hybrid Cuckoo Search (CS) for "on-the-fly" construction of Super-Cell Random APproximates (SCRAPs) having targeted atomic site and pair probabilities on arbitrary crystal lattices. Our hybrid-CS schema overcomes large, discrete combinatorial optimization by ultrafast global solutions that scale linearly in system size and strongly in parallel, e.g. a 4-element, 128-atom model [a $10^{73+}$ space] is found in seconds -- a reduction of 13,000+ over current strategies. With model-generation eliminated as a bottleneck, computational alloy design can be performed that is currently impossible or impractical. We showcase the method for real alloys with varying short-range order. Being problem-agnostic, our hybrid-CS schema offers numerous applications in diverse fields.

preprint2019arXiv

Simple correction to bandgap in IV and III-V semiconductors: an improved first-principles local density functional theory

We report results from a fast, efficient, and first-principles full-potential N$^{th}$-order muffin-tin orbital (FP-NMTO) method combined with van Leeuwen-Baerends correction to local density exchange-correlation potential. We show that more complete and compact basis set is critical in improving the electronic and structural properties. We exemplify the self-consistent FP-NMTO calculations on group IV and III-V semiconductors. Notably, predicted bandgaps, lattice constants, and bulk moduli are in good agreement with experiments (e.g., we find for Ge $0.86~e$V, $5.57$~Å, $75$~GPa vs. measured $0.74~e$V, $5.66$~Å, $77.2$~GPa). We also showcase its application to the electronic properties of 2-dimensional $h-$BN and $h-$SiC, again finding good agreement with experiments.