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Dragan Mihailovic

Dragan Mihailovic appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.supr-concond-mat.mes-hallcond-mat.mtrl-sci

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Published work

12 published item(s)

preprint2022arXiv

Ultra-Efficient Resistance Switching between Charge Ordered Phases in 1T-TaS$_2$ with a Single Picosecond Electrical Pulse

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of the 1T-TaS$_2$ has shown to be potentially useful for the development of high-speed, energy efficient non-volatile memory device. While ultrafast switching was previously reported with optical pulses, determination of the intrinsic speed limits of actual devices that are triggered by electrical pulses is technically challenging and hitherto still largely unexplored. A new optoelectronic laboratory-on-a-chip, designed for measurements of ultrafast memory switching, enables an accurate measurement of the electrical switching parameters with 100 fs temporal resolution. A photoconductive response is used for ultrashort electrical pulse generation, while its propagation along a coplanar transmission line is detected using electro-optical sampling using a purpose-grown highly-resistive electro-optic (Cd,Mn)Te crystal substrate. By combining the transmission line and the 1T-TaS$_2$ device in a single optoelectronic circuit a non-volatile resistance switching with a single 1.9 ps electrical pulse is demonstrated, with an extremely small switching energy density per unit area E$_A$ = 9.4 fJ/$μ$m$^2$. The experiments demonstrate ultrafast, energy-efficient circuits utilizing switching between non-volatile charge-ordered states offers a new technological platform for cryogenic memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Why does maximum Tc occur at the cross-over from weak to strong electron-phonon coupling in high temperature superconductors?

In cuprate superconductors, a pronounced maximum of superconducting Tc is observed in compounds that have an in-plane Cu-O distance close to ~1.92 Angstroms. On the other hand, direct measurements of the electron-phonon coupling lambda as a function of Cu-O distance show a clear linear correlation, implying that Tc is a strongly non-linear function of lambda. Conventional superconductivity theories based on the electron-phonon interaction predict a monotonic dependence of Tc on electron phonon coupling constant, which makes them incompatible with the observed behaviour. The observed cross-over behaviour as a function of lambda suggests that Tc occurs at the cross-over from weak to strong coupling, which is also associated with the onset of carrier localization. A coexistence, with a dynamical exchange of localized and itinerant carriers in a two-component superconductivity scenario are in agreement with the observed anomalous behavior and are suggested to be the key to understanding the mechanism for achieving high Tc.

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preprint2021arXiv

Energy efficient manipulation of topologically protected states in non-volatile ultrafast charge configuration memory devices

Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of converting the information-carrying charge current into magnetization switching sets fundamental limitations in energy consumption. Other non-magnetic non-volatile memories such as memristors, ferroelectric memory and phase change memory devices also rely on energetically relatively costly crystal structural rearrangements to store information. In contrast, conventional electronic charge states in quantum dots for example, can be switched in femtoseconds with high efficiency, but any stored information dissipates rapidly. Here we present a radically different approach in the form of a charge-configuration memory (CCM) device that relies on charge-injection-driven electronic crystal melting and topological protection of the resulting electronic domain configurations of a two-dimensional electronic crystal to store information. With multiprobe scanning tunneling microscopy (STM) we show microscopically, within an operational device, how dislocations in the domain ordering lead to metastability by a mechanism that is topologically equivalent to magnetic bubble memory. The devices have a very small switching energy (<2.2 fJ/bit), ultrafast switching speed of <11 ps and operational range over more than 3 orders of magnitude in temperature (<250 mK ~ 190 K). Together with their simple functionality, a large resistance switching ratio, straightforward fabrication and impressive endurance, CCM devices introduce a new memory paradigm in emerging cryo-computing and other high-performance computing applications that require ultrahigh speed and low energy consumption.

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preprint2018arXiv

Ultrafast jamming of electrons into an amorphous entangled state

New emergent states of matter in quantum systems may be created under non-equilibrium conditions if - through many body interactions - its constituents order on a timescale which is shorter than the time required for the system to reach thermal equilibrium. Conventionally non-equilibrium ordering is discussed in terms of symmetry breaking, nonthermal order-disorder, and more recently quenched topological transitions. Here we report a fundamentally new and unusual metastable form of amorphous correlation-localized fermionic matter, which is formed in a new type of quantum transition at low temperature either by short pulse photoexcitation or by electrical charge injection in the transition metal dichalcogenide 1T-TaS2. Scanning tunnelling microscopy (STM) reveals a pseudo-amorphous packing of localized electrons within the crystal lattice that is significantly denser than its hexagonally ordered low-temperature ground state, or any other ordered states of the system. Remarkably, the arrangement is not random, but displays a hyperuniform spatial density distribution commonly encountered in classical jammed systems, showing no signs of aggregation or phase separation. Unexpectedly for a localized electron system, tunnelling spectroscopy and multi- STM-tip surface resistance measurements reveal that the overall state is gapless and conducting, which implies that localized and itinerant carriers are resonantly entangled. The amorphous localized electron subsystem can be understood theoretically to arise from strong correlations between polarons sparsely dispersed on a 2D hexagonal atomic lattice, while itinerant carriers act as a resonantly coupled reservoir distinct in momentum space.

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preprint2016arXiv

Three-dimensional resistivity switching between correlated electronic states in 1T-TaS2

Recent demonstrations of controlled switching between different ordered macroscopic states by impulsive electromagnetic perturbations in complex materials have opened some fundamental questions on the mechanisms responsible for such remarkable behavior. Here we experimentally address the question of whether two-dimensional (2D) Mott physics can be responsible for unusual switching between states of different electronic order in the layered dichalcogenide 1T-TaS2, or it is a result of subtle inter-layer orbitronic re-ordering of its helical stacking structure. We report on the switching properties both in-plane and perpendicular to the layers by current-pulse injection, the anisotropy of electronic transport in the commensurate ground state, and relaxation properties of the switched metastable state. Contrary to recent theoretical calculations, which predict a uni-directional metal perpendicular to the layers, we observe a large resistivity in this direction, with a temperature-dependent anisotropy. Remarkably, large resistance ratios are observed in the memristive switching both in-plane (IP) and out-of-plane (OP). The relaxation dynamics of the metastable state for both IP and OP electron transport are seemingly governed by the same mesoscopic quantum re-ordering process. We conclude that 1T-TaS2 shows resistance switching arising from an interplay of both IP and OP correlations.

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preprint2016arXiv

Ultrafast optical spectroscopy of strongly correlated materials and high-temperature superconductors: a non-equilibrium approach

In the last two decades, non-equilibrium spectroscopies have evolved from avant-garde studies to crucial tools for expanding our understanding of the physics of strongly correlated materials. The possibility of obtaining simultaneously spectroscopic and temporal information has led to insights that are complementary to (and in several cases beyond) those attainable by studying the matter at equilibrium. Multiple phase transitions and new orders arising from competing interactions are benchmark examples where the interplay among electrons, lattice, and spin dynamics can be disentangled because of the different timescales that characterize the recovery of the initial ground state. The nature of the broken-symmetry phases and of the bosonic excitations that mediate the electronic interactions, eventually leading to superconductivity or other exotic states, can be revealed by observing the sub-picosecond dynamics of impulsively excited states. Recent experimental developments have made possible to monitor the time-evolution of both the single-particle and collective excitations under extreme conditions, such as those arising from strong and selective photo-stimulation. Here, we review the most recent achievements in the experimental and theoretical studies of the non-equilibrium electronic, optical, structural and magnetic properties of correlated materials. The focus will be mainly on the prototypical case of correlated oxides that exhibit unconventional superconductivity or other exotic phases, even though the discussion will extend also to other topical systems. The necessity of extending the actual experimental capabilities and the numerical and analytic tools to microscopically treat the non-equilibrium phenomena beyond the simple phenomenological approaches represents one of the most challenging new frontier in physics.

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preprint2014arXiv

Charge photogeneration in few-layer MoS2

The two-dimensional semiconductor MoS2 in its mono- and few-layer form is expected to have a significant exciton binding energy of several 100 meV, leading to the consensus that excitons are the primary photoexcited species. Nevertheless, even single layers show a strong photovoltaic effect and work as the active material in high sensitivity photodetectors, thus indicating efficient charge carrier photogeneration (CPG). Here we use continuous wave photomodulation spectroscopy to identify the optical signature of long-lived charge carriers and femtosecond pump-probe spectroscopy to follow the CPG dynamics. We find that intitial photoexcitation yields a branching between excitons and charge carriers, followed by excitation energy dependent hot exciton dissociation as an additional CPG mechanism. Based on these findings, we make simple suggestions for the design of more efficient MoS2 photovoltaic and photodetector devices.

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preprint2014arXiv

Separating pairing from quantum phase coherence dynamics above the superconducting transition by femtosecond spectroscopy

In classical superconductors an energy gap and phase coherence appear simultaneously with pairing at the transition to the superconducting state. In high-temperature superconductors, the possibility that pairing and phase coherence are distinct and independent processes has led to intense experimental search of their separate manifestations, but so far without success. Using femtosecond spectroscopy methods we now show that it is possible to clearly separate fluctuation dynamics of the superconducting pairing amplitude from the phase relaxation above the critical transition temperature. Empirically establishing a close correspondence between the superfluid density measured by THz spectroscopy and superconducting optical pump-probe response over a wide region of temperature, we find that in differently doped Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} crystals the pairing gap amplitude monotonically extends well beyond T_{c}, while the phase coherence shows a pronounced power-law divergence as T\rightarrow T_{c}, thus showing for the first time that phase coherence and gap formation are distinct processes which occur on different timescales.

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preprint2014arXiv

The effect of strain on the thawing of the hidden state and other transitions in 1T-TaS2

We investigate the effect of 2-dimensional (in-plane) strain on the critical transition temperature TH from the photoexcited hidden state in 1T-TaS$_2$ thin films on different substrates. We also measure the effect of in-plane strain on the transition temperature $T_{c2}$ between the nearly commensurate charge-density wave state and the commensurate state near 200 K. In each case, the strain is caused by the differential contraction of the sample and the substrate, and ranges from 0.5 % compressive strain (CaF$_2$) to 2 % tensile strain (sapphire). Strain appears to have an opposite effect on the H state and the NC-C state transitions. TH shows a large and negative strain coefficient of dT$_H$/de = - 8900+/-500 K, while $T_{c2}$ is not strongly affected by tensile strain and shows a positive coefficient for compressive strain, which is opposite to the effect observed for hydrostatic pressure.

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preprint2014arXiv

Ultrafast carrier localisation in the pseudogap state of cuprate superconductors from coherent quench experiments

A pseudogap (PG) was introduced by Mott to describe a state of matter which has a minimum in the density of states at the Fermi level, deep enough for states to become localized. It can arise either from Coulomb repulsion between electrons, or due to an incipient charge or spin order, or a combination of the two. These states are rapidly fluctuating in time with random phase, so they are hard to observe experimentally. Here we present the first coherent quench measurements of the dynamical transition to the pseudogap state in the prototype high temperature superconductor Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$, revealing a marked absence of incipient collective ordering beyond a few coherence lengths on short timescales at any level of doping. Instead we find evidence for sub-picosecond carrier localization favouring a picture of pairing resulting from the competing Coulomb interaction and strain, enhanced by a Fermi surface instability.

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preprint2013arXiv

Coherent topological defect dynamics and collective modes in superconductors and electronic crystals

The control of condensed matter systems out of equilibrium by laser pulses allows us to investigate the system trajectories through symmetry-breaking phase transitions. Thus the evolution of both collective modes and single particle excitations can be followed through diverse phase transitions with femtosecond resolution. Here we present experimental observations of the order parameter trajectory in the normal-superconductor transition and charge-density wave ordering transitions. Of particular interest is the coherent evolution of topological defects forming during the transition via the Kibble-Zurek mechanism, which appears to be measurable in optical pump probe experiments. Experiments on CDW systems reveal some new phenomena, such as coherent oscillations of the order parameter, the creation and emission of dispersive amplitudon modes upon the annihilation of topological defects, and mixing with weakly coupled finite-frequency (massive) bosons.

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preprint2002arXiv

Carrier relaxation dynamics in high temperature superconductors

In this report we review recent experimental results on photoexcited carrier relaxation dynamics on high temperature superconductors (HTSC) probed by a femtosecond time-resolved optical spectroscopy, and compare the results with the data obtained on quasi two dimensional charge density waves. In these experiments, a femtosecond laser pump pulse excites electron-hole pairs via an inter-band transition in the material. These hot carriers rapidly release their energy via electron-electron and electron-phonon collisions reaching states near the Fermi energy within ~100 fs. If an energy gap is present in the low-energy density of states (DOS), it inhibits the final relaxation step and photoexcited carriers accumulate above the gap causing a transient change in reflectivity arising from excited state absorption. The relaxation and recombination processes of photoexcited quasiparticles, governed by the magnitude, anisotropy and the T-dependence of the low energy gap, are monitored by measuring the resulting photoinduced absorption as a function of time after the photoexcitation. This way, the studies of carrier relaxation dynamics give us direct information of the T-dependent changes in the low energy DOS. The technique is particularly useful to probe the systems with spatial inhomogeneities, where different local environments give rise to different relaxation rates. The data on series of HTSC-s show evidence for the coexistence of two distinct relaxation processes, whose T-dependences seem to be governed by two different energy scales: a T-independent pseudogap and a mean-field-like T-dependent gap that opens at Tc. The data suggest the origin of the two-gap behavior is in the intrinsic microscopic spatial inhomogeneity of these materials.

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