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Dovydas Joksas

Dovydas Joksas contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Memristive, Spintronic, and 2D-Materials-Based Devices to Improve and Complement Computing Hardware

In a data-driven economy, virtually all industries benefit from advances in information technology -- powerful computing systems are critically important for rapid technological progress. However, this progress might be at risk of slowing down if we do not address the discrepancy between our current computing power demands and what the existing technologies can offer. Key limitations to improving energy efficiency are the excessive growth of data transfer costs associated with the von Neumann architecture and the fundamental limits of complementary metal-oxide-semiconductor (CMOS) technologies, such as transistors. In this perspective article, we discuss three technologies that will likely play an essential role in future computing systems: memristive electronics, spintronics, and electronics based on 2D materials. We present how these may transform conventional digital computers and contribute to the adoption of new paradigms, like neuromorphic computing.

preprint2022arXiv

Nonideality-Aware Training for Accurate and Robust Low-Power Memristive Neural Networks

Recent years have seen a rapid rise of artificial neural networks being employed in a number of cognitive tasks. The ever-increasing computing requirements of these structures have contributed to a desire for novel technologies and paradigms, including memristor-based hardware accelerators. Solutions based on memristive crossbars and analog data processing promise to improve the overall energy efficiency. However, memristor nonidealities can lead to the degradation of neural network accuracy, while the attempts to mitigate these negative effects often introduce design trade-offs, such as those between power and reliability. In this work, we design nonideality-aware training of memristor-based neural networks capable of dealing with the most common device nonidealities. We demonstrate the feasibility of using high-resistance devices that exhibit high $I$-$V$ nonlinearity -- by analyzing experimental data and employing nonideality-aware training, we estimate that the energy efficiency of memristive vector-matrix multipliers is improved by three orders of magnitude ($0.715\ \mathrm{TOPs}^{-1}\mathrm{W}^{-1}$ to $381\ \mathrm{TOPs}^{-1}\mathrm{W}^{-1}$) while maintaining similar accuracy. We show that associating the parameters of neural networks with individual memristors allows to bias these devices towards less conductive states through regularization of the corresponding optimization problem, while modifying the validation procedure leads to more reliable estimates of performance. We demonstrate the universality and robustness of our approach when dealing with a wide range of nonidealities.